GP1M005A040CG
GP1M005A040PG
Features
Low gate charge
100% avalanche tested
Improved dv/dt capability
Halogen free package
JEDEC Qualification
Improved ESD performance
D-PAK
V
DSS
= 440 V @T
jmax
I
D
= 3.4A
R
DS(on)
= 1.6
W(max)
@ V
GS
= 10 V
I-PAK
D
G
S
Device
GP1M005A040CG
GP1M005A040PG
Package
D-PAK
I-PAK
Marking
GP1M005A040CG
GP1M005A040PG
Remark
RoHS
RoHS
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
(Note 1)
Single Pulse Avalanche Energy
(Note 2)
Repetitive Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Power Dissipation
Peak Diode Recovery dv/dt
(Note 3)
Operating Junction and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8” from case for 5 seconds
* Limited only by maximum junction temperature
Symbol
V
DS
V
GS
T
C
= 25
℃
T
C
= 100
℃
I
D
I
DM
E
AS
I
AR
E
AR
T
C
= 25
℃
Derate above 25
℃
P
D
dv/dt
T
J
, T
STG
T
L
Value
400
±30
3.4*
2.15*
13.6*
165
3.4
5.0
50
0.4
4.5
-55~150
300
Unit
V
V
A
A
A
mJ
A
mJ
W
W/℃
V/ns
℃
℃
Thermal Characteristics
Parameter
Maximum Thermal resistance, Junction-to-Case
Maximum Thermal resistance, Junction-to-Ambient
August 2011 : Rev0
Symbol
R
qJC
R
qJA
Value
2.5
110
Unit
℃/W
℃/W
1/6
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GP1M005A040CG
GP1M005A040PG
Electrical Characteristics :
T
C
=25℃, unless otherwise noted
Parameter
Symbol
Test condition
Min
Typ
Max
Units
OFF
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Forward Gate-Source Leakage Current
Reverse Gate-Source Leakage Current
ON
Gate Threshold Voltage
Drain-Source On-Resistance
Forward Transconductance
(Note 4)
DYNAMIC
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING
Turn-On Delay Time
(Note 4,5)
Turn-On Rise Time
(Note 4,5)
Turn-Off Delay Time
(Note 4,5)
Turn-Off Fall Time
(Note 4,5)
BV
DSS
I
DSS
I
GSSF
I
GSSR
V
GS
= 0 V, I
D
= 250
m
A
V
DS
= 400 V, V
GS
= 0 V
V
DS
= 320 V, T
C
= 125
°
C
V
GS
= 30 V, V
DS
= 0 V
V
GS
= -30 V, V
DS
= 0 V
400
--
--
--
--
--
--
--
--
--
--
1
10
100
-100
V
m
A
m
A
µA
µA
V
GS(th)
R
DS(on)
g
FS
V
DS
= V
GS
, I
D
= 250
mA
V
GS
= 10 V, I
D
= 1.7A
V
DS
= 30 V, I
D
= 1.7 A
2
--
--
--
1.2
7
4
1.6
--
V
W
S
C
iss
C
oss
C
rss
V
DS
= 25 V, V
GS
= 0 V,
f = 1.0 MHz
--
--
--
522
56
4.3
--
--
--
pF
pF
pF
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
V
DD
= 200 V, I
D
= 3.4 A,
R
G
= 25 Ω
--
--
--
--
12
10
38
9
7.1
2.2
1.7
--
--
--
--
--
--
--
ns
ns
ns
ns
nC
nC
nC
Total Gate Charge
(Note 4,5)
Gate-Source Charge
(Note 4,5)
Gate-Drain Charge
(Note 4,5)
SOURCE DRAIN DIODE
Maximum Continuous Drain-Source
Diode Forward Current
Maximum Pulsed Drain-Source
Diode Forward Current
Drain-Source Diode Forward Voltage
Reverse Recovery Time
(Note 4)
Reverse Recovery Charge
(Note 4)
V
DS
= 320V, I
D
= 3.4 A,
V
GS
= 10 V
--
--
--
I
S
I
SM
V
SD
t
rr
Q
rr
---
---
V
GS
= 0 V, I
S
= 3.4 A
V
GS
= 0 V, I
S
= 3.4 A
dI
F
/ dt = 100 A/ms
--
--
--
--
--
--
--
--
185
0.8
3.4
13.6
1.5
--
--
A
A
V
ns
mC
Note :
1. Repeated rating : Pulse width limited by safe operating area
2. L=25mH, I
AS
=3.4A, V
DD
= 50V, R
G
= 25Ω, Starting T
J
= 25
℃
3 I
SD
≤ 3.4A, di/dt ≤ 200A/µs , V
DD
≤ BV
DS
, Starting T
J
= 25
℃
4. Pulse width ≤ 300µs, Duty Cycle ≤ 2%
5. Essentially Independent of Operating Temperature Typical Characteristics
August 2011 : Rev0
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2/6
GP1M005A040CG
GP1M005A040PG
10
Top V
GS
=15.0V
V
DS
= 30V
8
Drain Current, I
D
[A]
6
Bottom
Drain Current, I
D
[A]
10.0V
8.0V
7.0V
6.5V
6.0V
5.0V
10
250 μs Pulse Test
150
1
25
℃
4
℃
-55
℃
2
1. T
C
= 25
℃
2. 250μs Pulse Test
5
10
15
20
0.1
2
4
6
8
Drain-Source Voltage, V
DS
[V]
Gate-Source Voltage, V
GS
[V]
3.0
16
2.5
Drain-Source On-Resistance
R
DS(ON)
[Ω]
Reverse Drain Current, I
DR
[A]
T
J
= 25
℃
V
GS
= 0V
250μs Pulse Test
12
2.0
V
GS
= 10V
1.5
8
150
℃
V
GS
= 20V
1.0
25
4
℃
0.5
0.0
0
1
2
3
4
5
6
7
8
9
10
11
12
0.0
0.5
1.0
1.5
2.0
Drain Current,I
D
[A]
Source-Drain Voltage, V
SD
[V]
800
C
iss
= C
gs
+ C
gd
(C
ds
= shorted)
C
oss
= C
ds
+ C
gd
V
GS
= 0 V
C
rss
= C
gd
12
I
D
= 3.4A
600
C
iss
f = 1 MHz
Gate-Source Voltage, V
GS
[V]
10
V
DS
= 80V
V
DS
= 200V
V
DS
= 320V
Capacitance [pF]
8
400
6
C
oss
4
200
2
C
rss
0
-1
10
10
0
0
10
1
0
2
4
6
8
Drain-Source Voltage, V
DS
[V]
Total Gate Charge, Q
G
[nC]
August 2011 : Rev0
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3/6
GP1M005A040CG
GP1M005A040PG
1.20
3.0
V
GS
= 10 V
V
GS
= 0 V
I
D
= 1.7 A
Drain-Source Breakdown Voltage
BV
DSS
, (Normalized)
1.15
1.10
1.05
1.00
0.95
0.90
0.85
0.80
-80
Drain-Source On-Resistance
R
DS(ON)
, (Normalized)
0
40
80
o
I
D
= 250 μA
2.5
2.0
1.5
1.0
0.5
-40
120
160
Junction Temperature,T
J
[ C]
0.0
-80
-40
0
40
80
o
120
160
Junction Temperature, T
J
[ C]
4
1.5
3
Gate Threshold Voltage
V
TH
, (Normalized)
Drain Current, I
D
[A]
1.0
2
0.5
1
V
DS
= V
GS
I
D
= 250
m
A
0
25
50
75
100
℃
125
150
0.0
-80
-40
0
40
80
o
120
160
Case Temperature, T
C
[
]
Junction Temperature, T
J
[ C]
10
1
Operation in This Area
is Limited by R
DS(on)
10 us
100 us
Transient thermal impedance
Z
thJC
(t)
1 ms
Drain Current, I
D
[A]
10 ms
DC 100 ms
10
0
10
0
Duty=0.5
0.2
0.1
0.05
10
-1
0.02
0.01
single pulse
P
DM
t
T
10
-1
T
C
= 25 C
T
J
= 150 C
Single Pulse
o
o
Duty = t/T
Z
thJC
(t) = 2.5
℃
/W Max.
10
-2
10
-2
10
0
10
1
10
2
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
Drain-Source Voltage, V
DS
[V]
Pulse Width, t [sec]
August 2011 : Rev0
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GP1M005A040CG
GP1M005A040PG
TO-252 (D-PAK) MECHANICAL DATA
August 2011 : Rev0
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