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IRG5K100HF12B

Description
MOD IGBT 1200V 100A POWIR 62
Categorysemiconductor    Discrete semiconductor   
File Size882KB,6 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Environmental Compliance
Download Datasheet Parametric View All

IRG5K100HF12B Overview

MOD IGBT 1200V 100A POWIR 62

IRG5K100HF12B Parametric

Parameter NameAttribute value
IGBT type-
Configurationhalf bridge
Voltage - collector-emitter breakdown (maximum)1200V
Current - Collector (Ic) (Maximum)200A
Power - Max780W
Vce(on) when different Vge,Ic2.6V @ 15V,100A
Current - collector cutoff (maximum)2mA
Input capacitance (Cies) at different Vce11.7nF @ 25V
enterstandard
NTC thermistornone
Operating temperature-40°C ~ 150°C(TJ)
Installation typeBase installation
Package/casingPOWIR® 62 Module
Supplier device packagingPOWIR® 62
IRG5K50P5K50PM06E
IRG5K100HF12B
V
CES
= 1200V
I
C
= 100A at T
C
= 80°C
t
SC
≥ 10µsec
V
CE(ON)
= 2.30V at I
C
= 100A
IGBT Half-Bridge
POWIR 62
Package
Applications:
Industrial Motor Drive
Uninterruptible Power Supply
Welding and Cutting Machine
Switched Mode Power Supply
Induction Heating
Features
Low V
CE(ON)
and Switching Losses
RBSOA Tested
10µsec Short Circuit Safe Operating Area
POWIR 62
Package
Lead Free
Benefits
High Efficiency in a Wide Range of Applications
Rugged Transient Performance
Industry Standard
RoHS Compliant, Environmental Friendly
Base Part Number
IRG5K100HF12B
Package Type
POWIR 62
Standard Pack
Box
Quantity
45
Orderable Part Number
IRG5K100HF12B
Absolute Maximum Ratings of IGBT
V
CES
V
GES
I
C
I
CM
P
D
T
J
T
JOP
T
stg
Collector to Emitter Voltage
Continuous Gate to Emitter Voltage
Continuous Collector Current
Pulse Collector Current
Maximum Power Dissipation (IGBT)
Maximum IGBT Junction Temperature
Maximum Operating Junction Temperature Range
Storage Temperature
T
C
= 80°C
T
C
= 25°C
T
J
= 150°C
T
C
= 25°C, T
J
= 150°C
1200
±20
100
200
200
780
150
-40 to +150
-40 to +125
V
V
A
A
A
W
°C
°C
°C
1
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