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IRG5K200HF06A

Description
Insulated Gate Bipolar Transistor
CategoryDiscrete semiconductor    The transistor   
File Size997KB,6 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Download Datasheet Parametric View All

IRG5K200HF06A Overview

Insulated Gate Bipolar Transistor

IRG5K200HF06A Parametric

Parameter NameAttribute value
Objectid8006014023
Reach Compliance Codecompliant
ECCN codeEAR99
YTEOL0
IRG5K50P5K50PM06E
IRG5K200HF06A
V
CES
= 600V
I
C
= 200A at T
C
= 80⁰C
t
SC
≥ 10µsec
V
CE(ON)
= 1.80V at I
C
= 200A
IGBT Half-Bridge
POWIR 34
Package
Applications:
Industrial Motor Drive
Uninterruptible Power Supply
Welding and Cutting Machine
Switched Mode Power Supply
Induction Heating
AC Inverter Drive
Features
Low V
CE(ON)
and Switching Losses
100% RBSOA Tested
10µsec Short Circuit Safe Operating Area
POWIR 34
Package
Lead Free
Benefits
High Efficiency in a Wide Range of Applications
Rugged Transient Performance
Industry Standard
RoHS Compliant, Environmental Friendly
Base Part Number
IRG5K200HF06A
Package Type
POWIR 34
Standard Pack
Box
Quantity
80
Orderable Part Number
IRG5K200HF06A
Absolute Maximum Ratings of IGBT
V
CES
V
GES
I
C
I
CM
P
D
T
J
T
JOP
T
stg
Collector to Emitter Voltage
Continuous Gate to Emitter Voltage
Continuous Collector Current
Pulse Collector Current
Maximum Power Dissipation (IGBT)
Maximum IGBT Junction Temperature
Maximum Operating Junction Temperature Range
Storage Temperature
T
C
= 80°C
T
C
= 25°C
T
J
= 150°C
T
C
= 25°C, T
J
= 150°C
600
±20
200
340
400
800
150
-40 to +150
-40 to +125
V
V
A
A
A
W
°C
°C
°C
1
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