IRG5K50P5K50PM06E
IRG5U300SD12B
V
CES
= 1200V
I
C
= 300A at T
C
= 80°C
t
SC
≥ 10µsec
V
CE(ON)
= 3.20V at I
C
= 300A
Single Switch IGBT with Soft Recovery Diode
POWIR 62
™
Package
Applications：
Industrial Motor Drive
Uninterruptible Power Supply
Welding and Cutting Machine
Switched Mode Power Supply
Induction Heating
Features
Low V
CE(ON)
and Switching Losses
RBSOA Tested
10µsec Short Circuit Safe Operating Area
POWIR 62
™
Package
Lead Free
Benefits
High Efficiency in a Wide Range of Applications
Rugged Transient Performance
Industry Standard
RoHS Compliant, Environmental Friendly
Base Part Number
IRG5U300SD12B
Package Type
POWIR 62
™
Standard Pack
Box
Quantity
45
Orderable Part Number
IRG5U300SD12B
Absolute Maximum Ratings of IGBT
V
CES
V
GES
I
C
I
CM
P
D
T
J
T
JOP
T
stg
Collector to Emitter Voltage
Continuous Gate to Emitter Voltage
Continuous Collector Current
Pulse Collector Current
Maximum Power Dissipation (IGBT)
Maximum IGBT Junction Temperature
Maximum Operating Junction Temperature Range
Storage Temperature
T
C
= 80°C
T
C
= 25°C
T
J
= 150°C
T
C
= 25°C, T
J
= 150°C
1200
±20
300
480
600
2170
150
-40 to +150
-40 to +125
V
V
A
A
A
W
°C
°C
°C
1
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IRG5K50P5K50PM06E
IRG5U300SD12B
Electrical Characteristics of IGBT at T
J
= 25°C (Unless Otherwise Specified)
Parameter
V
(BR)CES
V
GE(th)
V
CE(ON)
I
CES
I
GES
R
Gint
Collector to Emitter Breakdown
Voltage
Gate Threshold Voltage
Collector to Emitter Saturation Voltage
Collector to Emitter Leakage Current
Gate to Emitter Leakage Current
Internal Gate Resistance
0.62
Min.
1200
4.5
5.3
3.20
3.80
3
400
6.0
3.50
Typ.
Max.
Unit
V
V
V
V
mA
nA
Ω
Test Conditions
V
GE
= 0V, I
C
= 3mA
I
C
= 3mA, V
CE
= V
GE
T
J
= 25°C
T
J
= 125°C
I
C
= 300A,
V
GE
= 15V
V
GE
= 0V, V
CE
= V
CES
V
GE
= ±20V, V
CE
= 0
Switching Characteristics of IGBT
Parameter
t
d(on)
Turn-on Delay Time
Min.
Typ.
640
600
360
400
1780
1800
130
160
15.2
21.1
9.8
17.5
4000
38.0
2.76
1.10
nF
V
CE
= 25V, V
GE
= 0V,
f
＝1MHz,
T
J
= 25°C
I
C
= 600A,V
CC
= 960V,
V
P
=1200V, R
G
= 15Ω,
V
GE
= +15V to 0V,
T
J
= 150°C
μs
V
CC
= 600V, V
GE
= 15V,
T
J
= 150°C
Max.
Unit
ns
Test Conditions
T
J
= 25°C
T
J
= 125°C
T
J
= 25°C
T
J
= 125°C
T
J
= 25°C
T
J
= 125°C
T
J
= 25°C
T
J
= 125°C
T
J
= 25°C
T
J
= 125°C
T
J
= 25°C
T
J
= 125°C
T
J
= 25°C
V
CC
=600V,
I
C
= 300A,
R
G
= 4.7Ω,
V
GE
=±15V,
Inductive
Load
t
r
Rise Time
ns
t
d(off)
Turn-off Delay Time
ns
t
f
Fall Time
ns
E
on
Turn-on Switching Loss
mJ
E
off
Q
g
C
ies
C
oes
C
res
Turn-off Switching Loss
Total Gate Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
mJ
nC
RBSOA
Reverse Bias Safe Operating Area
Trapezoid
SCSOA
Short Circuit Safe Operating Area
10
2
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IRG5K50P5K50PM06E
IRG5U300SD12B
Absolute Maximum Ratings of Freewheeling Diode
V
RRM
I
F
I
FM
Repetitive Peak Reverse Voltage
Diode Continuous Forward Current, T
C
= 25°C
Diode Continuous Forward Current, T
C
= 80°C
Pulse Diode Current
1200
600
300
600
V
A
A
Electrical and Switching Characteristics of Freewheeling Diode
Parameter
V
F
Forward Voltage
Typ.
2.20
2.40
170
240
16.4
32.8
10.2
18.4
Max.
2.70
Unit
V
Test Conditions
T
J
= 25°C
T
J
= 125°C
T
J
= 25°C
T
J
= 125°C
T
J
= 25°C
T
J
= 125°C
T
J
= 25°C
T
J
= 125°C
I
F
＝300A,
di/dt=3000A/μs,
V
rr
= 600V,
V
GE
= -15V
I
F
= 300A ,
V
GE
= 0V
I
rr
Peak Reverse Recovery Current
A
Q
rr
Reverse Recovery Charge
µC
E
rec
Reverse Recovery Energy
mJ
Module Characteristics
Parameter
V
iso
R
θJC
R
θJC
R
θCS
M
M
G
Isolation Voltage
(All Terminals Shorted),
f = 50Hz, 1minute
Junction-to-Case (IGBT)
Junction-to-Case (Freewheeling Diode)
Case-To-Sink
(Conductive Grease Applied)
Power Terminals Screw: M6
Mounting Screw: M6
Weight
3.0
4.0
310
0.057
0.140
0.1
5.0
6.0
Min.
Typ.
Max.
2500
Unit
V
°C/W
°C/W
°C/W
N·m
N·m
g
3
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September 2, 2014
IRG5K50P5K50PM06E
IRG5U300SD12B
600
540
480
420
360
VGE =15V
TJ =125°C
TJ =25°C
600
540
480
420
360
TJ =125°C
VGE =17V
VGE =15V
VGE =13V
VGE =11V
VGE =9V
IC (A)
240
180
120
60
0
0.0
0.6
1.2
1.8
2.4
3.0
VCE (V)
3.6
4.2
4.8
5.4
IC (A)
300
300
240
180
120
60
0
0.0
0.6
1.2
1.8
2.4
3.0 3.6
VCE (V)
4.2
4.8
5.4
6.0
6.6
Fig.1 Typical IGBT Saturation Characteristics
Fig.2 Typical IGBT Output Characteristics
60
600
500
400
VGE =0V
TJ =125°C
TJ =25°C
50
40
VGE = 0V,f =1 MHz
Cies
Coes
C (nF)
IF (A)
300
200
100
0
0.0
30
20
10
0
0.6
1.2
1.8
VF (V)
2.4
3.0
3.6
0
5
10
VCE (V)
15
20
25
Fig.3 Typical Freewheeling Diode Characteristics
Fig. 4 Typical Capacitance Characteristics
70
60
50
40
30
20
10
0
VCC =600V,VGE =+/-15V,
Rg =4.7 ohm,TJ =125°C
Eoff
Eon
Erec
80
70
60
50
VCC = 600V,VGE = +/-15V,
IC = 300A ,TJ =125°C
Eoff
Eon
Erec
E (mJ)
E (mJ)
40
30
20
10
0
0
5
10
15
20
25
0
60
120
180
240
300 360
IC (A)
420
480
540
600
Rg (
)
Fig.5 Typical Switching Loss vs. Collector Current
Fig.6 Typical Switching Loss vs. Gate Resistance
4
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IRG5K50P5K50PM06E
IRG5U300SD12B
360
300
240
Square Wave:
Duty Cycle:50%
TJ =125°C
TC =80°C
Rg =4.7 ohm,VGE =15V
600
500
400
Load Current (A)
180
120
60
0
Vcc
IC (A)
I
300
200
100
0
Module
Chip
0
200
400
600
VCES (V)
800
1000
1200
Diode as specified
1
10
Frequency (KHz)
100
Fig.7 Typical Load Current vs. Frequency
Fig.8 Reverse Bias Safe Operation Area (RBSOA)
0.08
ZthJC:IGBT
0.18
ZthJC:Didoe
0.15
0.06
0.12
ZthJC (K/W)
0.04
0.02
0.00
0.001
ZthJC (K/W)
0.09
0.06
0.03
0.00
0.001
0.01
t
(
s
)
0.1
1
2
0.01
t
(
s
)
0.1
1
2
Fig.9 Typical Transient Thermal Impedance (IGBT) Fig.10 Typical Transient Thermal Impedance (Diode)
5
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September 2, 2014
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