IRG5K50P5K50PM06E
IRG7T75HF12A
V
CES
= 1200V
I
C
= 75A at T
C
= 80⁰C
t
SC
≥ 10µsec
V
CE(ON)
= 1.90V at I
C
= 75A
IGBT Half-Bridge
POWIR 34
™
Package
Applications：
Industrial Motor Drive
Uninterruptible Power Supply
Welding and Cutting Machine
Switched Mode Power Supply
Induction Heating
AC Inverter Drive
Features
Low V
CE(ON)
and Switching Losses
100% RBSOA Tested
10µsec Short Circuit Safe Operating Area
POWIR 34
™
Package
Lead Free
Benefits
High Efficiency in a Wide Range of Applications
Rugged Transient Performance
Industry Standard
RoHS Compliant, Environmental Friendly
Base Part Number
IRG7T75HF12A
Package Type
POWIR 34
™
Standard Pack
Box
Quantity
80
Orderable Part Number
IRG7T75HF12A
Absolute Maximum Ratings of IGBT
V
CES
V
GES
I
C
I
CM
P
D
T
J
T
JOP
T
stg
Collector to Emitter Voltage
Continuous Gate to Emitter Voltage
Continuous Collector Current
Pulse Collector Current
Maximum Power Dissipation (IGBT)
Maximum IGBT Junction Temperature
Maximum Operating Junction Temperature Range
Storage Temperature
T
C
= 80°C
T
C
= 25°C
T
J
= 175°C
T
C
= 25°C, T
J
= 175°C
1200
±20
75
150
150
450
175
-40 to +150
-40 to +125
V
V
A
A
A
W
°C
°C
°C
1
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IRG5K50P5K50PM06E
IRG7T75HF12A
Electrical Characteristics of IGBT at T
J
= 25°C (Unless Otherwise Specified)
Parameter
V
(BR)CES
V
GE(th)
V
CE(ON)
I
CES
I
GES
R
Gint
Collector to Emitter Breakdown
Voltage
Gate Threshold Voltage
Collector to Emitter Saturation Voltage
Collector to Emitter Leakage Current
Gate to Emitter Leakage Current
Internal Gate Resistance
2.5
Min.
1200
5.0
5.8
1.90
2.20
1
400
6.5
2.20
Typ.
Max.
Unit
V
V
V
V
mA
nA
Ω
Test Conditions
V
GE
= 0V, I
C
= 1mA
I
C
= 3.5mA, V
CE
= V
GE
T
J
= 25°C
T
J
= 125°C
I
C
= 75A,
V
GE
= 15V
V
GE
= 0V, V
CE
= V
CES
V
GE
= ±20V, V
CE
= 0V
Switching Characteristics of IGBT
Parameter
t
d(on)
Turn-on Delay Time
Min.
Typ.
190
175
100
110
270
280
160
240
5.2
6.9
3.6
5.5
630
10.4
0.56
0.37
nF
V
CE
= 25V, V
GE
= 0V,
f
＝1MHz,
T
J
= 25°C
I
C
= 150A,V
CC
= 960V,
V
P
= 1200V, R
G
= 15Ω,
V
GE
= +15V to 0V,
T
J
= 150°C
μs
V
CC
= 600V, V
GE
= 15V,
T
J
= 150°C
Max.
Unit
ns
Test Conditions
T
J
= 25°C
T
J
= 125°C
T
J
= 25°C
T
J
= 125°C
T
J
= 25°C
T
J
= 125°C
T
J
= 25°C
T
J
= 125°C
T
J
= 25°C
T
J
= 125°C
T
J
= 25°C
T
J
= 125°C
T
J
= 25°C
V
CC
=600V,
I
C
= 75A,
R
G
= 15Ω,
V
GE
=±15V,
Inductive
Load
t
r
Rise Time
ns
t
d(off)
Turn-off Delay Time
ns
t
f
Fall Time
ns
E
on
Turn-on Switching Loss
mJ
E
off
Q
g
C
ies
C
oes
C
res
Turn-off Switching Loss
Total Gate Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
mJ
nC
RBSOA
Reverse Bias Safe Operating Area
Trapezoid
SCSOA
Short Circuit Safe Operating Area
10
2
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October 1, 2014
IRG5K50P5K50PM06E
IRG7T75HF12A
Absolute Maximum Ratings of Freewheeling Diode
V
RRM
I
F
I
FM
Repetitive Peak Reverse Voltage
Diode Continuous Forward Current, T
C
= 25°C
Diode Continuous Forward Current, T
C
= 80°C
Pulse Diode Current
1200
150
75
150
V
A
A
Electrical and Switching Characteristics of Freewheeling Diode
Parameter
V
F
Forward Voltage
Typ.
2.20
2.40
30
45
3.6
7.4
1.5
3.3
Max.
2.70
Unit
V
Test Conditions
T
J
= 25°C
T
J
= 125°C
T
J
= 25°C
T
J
= 125°C
T
J
= 25°C
T
J
= 125°C
T
J
= 25°C
T
J
= 125°C
I
F
＝75A,
di/dt=750A/μs,
V
rr
= 600V,
V
GE
= -15V
I
F
= 75A ,
V
GE
= 0V
I
rr
Peak Reverse Recovery Current
A
Q
rr
Reverse Recovery Charge
µC
E
rec
Reverse Recovery Energy
mJ
Module Characteristics
Parameter
V
iso
R
θJC
R
θJC
R
θCS
M
M
G
Isolation Voltage
(All Terminals Shorted),
f = 50Hz, 1minute
Junction-to-Case (IGBT)
Junction-to-Case (Diode)
Case-To-Sink
(Conductive Grease Applied)
Power Terminals Screw: M5
Mounting Screw: M6
Weight
3.0
4.0
165
0.33
0.56
0.1
5.0
6.0
Min.
Typ.
Max.
2500
Unit
V
°C/W
°C/W
°C/W
N·m
N·m
g
3
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October 1, 2014
IRG5K50P5K50PM06E
IRG7T75HF12A
150
135
120
105
90
VGE =15V
TJ =125°C
TJ =125°C
150
135
120
105
90
IC (A)
TJ =125°C
VGE =17V
VGE =15V
VGE =13V
VGE =11V
VGE =9V
IC (A)
75
60
45
30
15
0
0.0
0.4
0.8
1.2
1.6
2.0
VCE (V)
2.4
2.8
3.2
3.6
75
60
45
30
15
0
0.0
0.6
1.2
1.8
2.4
VCE (V)
3.0
3.6
4.2
4.8
Fig.1 Typical IGBT Saturation Characteristics
Fig.2 Typical IGBT Output Characteristics
150
135
120
105
90
VGE =0V
TJ =125°C
TJ =25°C
20
VCE= 0 V,f=1MHz
Cies
15
Coes
IF (A)
75
60
45
30
15
0
0.0
0.4
0.8
1.2
1.6
2.0
VF (V)
2.4
2.8
3.2
3.6
C (nF)
10
5
0
0
5
10
VCE (V)
15
20
25
Fig.3 Typical Diode Forward Characteristics
Fig. 4 Typical Capacitance Characteristics
14
12
10
E (mJ)
VCC =600V,VGE =+/-15V,
Rg =15 ohm,TJ =125°C
Eoff
Eon
E (mJ)
18
16
14
12
10
8
6
4
VCC=600V,VGE=+/-15V,
IC=75A,TJ =125°C
Eoff
Eon
Erec
8
6
4
2
0
Erec
2
0
15
30
45
60
75
90
IC (A)
105
120
135
150
0
0
5
10
15
20
25
30
Rg (
)
35
40
45
50
Fig.5 Typical Switching Loss vs. Collector Current
Fig.6 Typical Switching Loss vs. Gate Resistance
4
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IRG5K50P5K50PM06E
IRG7T75HF12A
100
90
80
70
Duty Cycle:50%
TJ =125°C
TC =80°C
Rg =15 ohm,VGE =15V
Square Wave:
Vcc
150
120
Load Current (A)
60
50
40
30
20
10
0
1
Diode as specified
IC (A)
I
90
60
30
Module
Chip
100
10
Frequency (KHz)
0
0
200
400
600
800
VCES (V)
1000
1200
Fig.7 Typical Load Current vs. Frequency
0.4
ZthJC:IGBT
0.3
Fig.8 Reverse Bias Safe Operation Area (RBSOA)
0.7
0.6
0.5
ZthJC:Diode
ZthJC
(K/W)
ZthJC
(K/W)
0.01
0.1
1
2
0.4
0.3
0.2
0.1
0.2
0.1
0.0
0.001
t (s)
0.0
0.001
0.01
t (s)
0.1
1
3
Fig.9 Typical Transient Thermal Impedance (IGBT) Fig.10 Typical Transient Thermal Impedance (Diode)
5
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October 1, 2014
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