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IRG7U50HF12A

Description
MOD IGBT 1200V 50A POWIR 34
Categorysemiconductor    Discrete semiconductor   
File Size981KB,6 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Environmental Compliance
Download Datasheet Parametric View All

IRG7U50HF12A Overview

MOD IGBT 1200V 50A POWIR 34

IRG7U50HF12A Parametric

Parameter NameAttribute value
IGBT type-
Configurationhalf bridge
Voltage - collector-emitter breakdown (maximum)1200V
Current - Collector (Ic) (Maximum)100A
Power - Max310W
Vce(on) when different Vge,Ic2V @ 15V,50A
Current - collector cutoff (maximum)1mA
Input capacitance (Cies) at different Vce6nF @ 25V
enterstandard
NTC thermistornone
Operating temperature-40°C ~ 150°C(TJ)
Installation typeBase installation
Package/casingPOWIR® 34 module
Supplier device packagingPOWIR® 34
IRG5K50P5K50PM06E
IRG7U50HF12A
V
CES
= 1200V
I
C
= 50A at T
C
= 80⁰C
V
CE(ON)
= 1.70V at I
C
= 50A
IGBT Half-Bridge
POWIR 34
Package
Applications:
Industrial Motor Drive
Uninterruptible Power Supply
Welding and Cutting Machine
Switched Mode Power Supply
Induction Heating
AC Inverter Drive
Features
Low V
CE(ON)
and Switching Losses
100% RBSOA Tested
POWIR 34
Package
Lead Free
Benefits
High Efficiency in a Wide Range of Applications
Rugged Transient Performance
Industry Standard
RoHS Compliant, Environmental Friendly
Base Part Number
IRG7U50HF12A
Package Type
POWIR 34
Standard Pack
Box
Quantity
80
Orderable Part Number
IRG7U50HF12A
Absolute Maximum Ratings of IGBT
V
CES
V
GES
I
C
I
CM
P
D
T
J
T
JOP
T
stg
Collector to Emitter Voltage
Continuous Gate to Emitter Voltage
Continuous Collector Current
Pulse Collector Current
Maximum Power Dissipation (IGBT)
Maximum IGBT Junction Temperature
Maximum Operating Junction Temperature Range
Storage Temperature
T
C
= 80°C
T
C
= 25°C
T
J
= 175°C
T
C
= 25°C, T
J
= 175°C
1200
±20
50
100
100
310
175
-40 to +150
-40 to +125
V
V
A
A
A
W
°C
°C
°C
1
www.irf.com © 2014 International Rectifier
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October 1
, 2014
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