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PTFB191501EV1XWSA1

Description
FET RF LDMOS 150W H36248-2
CategoryDiscrete semiconductor    The transistor   
File Size309KB,15 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Download Datasheet Parametric Compare View All

PTFB191501EV1XWSA1 Overview

FET RF LDMOS 150W H36248-2

PTFB191501EV1XWSA1 Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
MakerInfineon
package instructionFLANGE MOUNT, R-XDFM-F2
Contacts2
Reach Compliance Codecompliant
ECCN codeEAR99
Other featuresHGH RELIABILITY
Shell connectionSOURCE
ConfigurationSINGLE
Minimum drain-source breakdown voltage65 V
FET technologyMETAL-OXIDE SEMICONDUCTOR
highest frequency bandL BAND
JESD-30 codeR-XDFM-F2
Number of components1
Number of terminals2
Operating modeENHANCEMENT MODE
Maximum operating temperature200 °C
Package body materialUNSPECIFIED
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Certification statusNot Qualified
surface mountYES
Terminal formFLAT
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
PTFB191501E
PTFB191501F
Confidential, Limited Internal Distribution
Thermally-Enhanced High Power RF LDMOS FETs
150 W, 1930 – 1990 MHz
Description
The PTFB191501E and PTFB191501F are 150-watt LDMOS FETs
designed for single- and two-carrier WCDMA and CDMA applications
from 1930 to 1990 MHz. Features include input and output matching,
and thermally-enhanced, RoHs-compliant package with slotted and
earless flanges. Manufactured with Infineon's advanced LDMOS
process, these devices provide excellent thermal performance and
superior reliability.
PTFB191501E
Package H-36248-2
PTFB191501F
Package H-37248-2
Two-carrier WCDMA Drive-up
V
DD
= 30 V, I
DQ
= 1.20 A, ƒ = 1990 MHz, 3GPP WCDMA,
PAR = 8 dB, 10 MHz carrier spacing, BW 3.84 MHz
-20
-25
-30
40
Efficiency (%)
ue
25
20
15
10
5
0
45
47
49
IMD Up
30
d
Efficiency
35
IMD (dBc)
-35
-40
-45
-50
-55
-60
31
33
in
nt
IMD Low
ACPR
sc
o
35
37
39
41
43
Output Power (dBm)
RF Characteristics
Two-carrier WCDMA Measurements
(not subject to production test—verified by design/characterization in Infineon test fixture)
V
DD
= 30 V, I
DQ
= 1.2 A, P
OUT
= 35 W average, ƒ
1
= 1985 MHz, ƒ
2
= 1995 MHz, 3GPP signal, channel bandwidth = 3.84 MHz,
peak/average = 8 dB @ 0.01% CCDF
Characteristic
Gain
Drain Efficiency
Intermodulation Distortion
All published data at T
CASE
= 25°C unless otherwise indicated
di
pr
od
uc
Features
Broadband internal matching
Typical two-carrier WCDMA performance at
1990 MHz, 30 V
- Average output power = 35 W
- Linear gain = 18 dB
- Efficiency = 30%
- Intermodulation distortion = –35 dBc
Typical CW performance, 1990 MHz, 30 V
- Output power at P–1dB = 150 W
- Efficiency = 55%
Increased negative gate-source voltage range for
improved performance in Doherty peaking
amplifiers
Integrated ESD protection: Human Body Model,
Class 2 (minimum)
Excellent thermal stability, low HCI drift
Capable of handling 10:1 VSWR @ 30 V, 150 W
(CW) output power
Pb-free, RoHS-compliant
Symbol
G
ps
Min
ts
Typ
18
30
–35
Max
Unit
dB
%
dBc
η
D
IMD
*See Infineon distributor for future availability.
ESD:
Electrostatic discharge sensitive device—observe handling precautions!
Data Sheet
1 of 15
Rev. 03, 2015-01-14

PTFB191501EV1XWSA1 Related Products

PTFB191501EV1XWSA1 PTFB191501EV1R250XTMA1 PTFB191501FV1XWSA1
Description FET RF LDMOS 150W H36248-2 FET RF LDMOS 150W H36248-2 FET RF LDMOS 150W H37248-2
Maker Infineon Infineon Infineon
package instruction FLANGE MOUNT, R-XDFM-F2 FLANGE MOUNT, R-XDFM-F2 FLATPACK, R-XDFP-F2
Reach Compliance Code compliant compliant compliant
Other features HGH RELIABILITY HGH RELIABILITY HGH RELIABILITY
Shell connection SOURCE SOURCE SOURCE
Configuration SINGLE SINGLE SINGLE
Minimum drain-source breakdown voltage 65 V 65 V 65 V
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
highest frequency band L BAND L BAND L BAND
JESD-30 code R-XDFM-F2 R-XDFM-F2 R-XDFP-F2
Number of components 1 1 1
Number of terminals 2 2 2
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE
Maximum operating temperature 200 °C 200 °C 200 °C
Package body material UNSPECIFIED UNSPECIFIED UNSPECIFIED
Package shape RECTANGULAR RECTANGULAR RECTANGULAR
Package form FLANGE MOUNT FLANGE MOUNT FLATPACK
Polarity/channel type N-CHANNEL N-CHANNEL N-CHANNEL
surface mount YES YES YES
Terminal form FLAT FLAT FLAT
Terminal location DUAL DUAL DUAL
transistor applications AMPLIFIER AMPLIFIER AMPLIFIER
Transistor component materials SILICON SILICON SILICON
Is it lead-free? Lead free - Lead free
Contacts 2 - 2
ECCN code EAR99 - EAR99
Peak Reflow Temperature (Celsius) NOT SPECIFIED - NOT SPECIFIED
Certification status Not Qualified - Not Qualified
Maximum time at peak reflow temperature NOT SPECIFIED - NOT SPECIFIED
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