PTMA180402EL
PTMA180402FL
Wideband RF LDMOS Integrated Power Amplifier
40 W, 1800 – 2000 MHz
Description
The PTMA180402EL and PTMA180402FL are matched, wideband
40-watt, 2-stage, LDMOS integrated amplifiers intended for use in all
typical modulation formats from 1800 to 2000 MHz. These devices
are offered in thermally-enhanced ceramic packages for cool and
reliable operation.
PTMA180402EL
Package H-33265-8
V
DD
= 28 V, I
DQ1
= 110 mA, I
DQ1
= 330 mA
35
30
25
20
15
10
5
1700
0
Broadband Performance
Gain (dB)
-10
in
-15
Return Loss (dB)
ue
Return Loss
•
-5
d
1 of 12
Gain
nt
-20
-25
sc
o
1800
1900
2000
2100
-30
2200
Frequency (MHz)
All published data at T
CASE
= 25°C unless otherwise indicated
ESD: Electrostatic discharge sensitive device—observe handling precautions!
Data Sheet
di
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Features
•
•
•
•
•
•
PTMA180402FL
Package H-34265-8
Designed for wide RF and modulation bandwidths
and low memory effects
On-chip matching, integrated input DC block,
50-ohm input and > 5-ohm output
Typical single-carrier CDMA performance at
1960 MHz, 28 V
- Average output power = 4 W
- Linear gain = 30 dB
- Efficiency = 14%
- Adjacent channel power = –53 dBc
Typical 2-tone performance, 1960 MHz, 28 V
- Output power (PEP) = 50 W at IM3 = –30 dBc
- Efficiency = 33%
Capable of handling 10:1 VSWR @ 28 V, 40 W
(CW) output power
Integrated ESD protection. Meets HBM Class 1B
(minimum), per JESD22-A114F
High-performance, thermally-enhanced packages,
Pb-free and RoHS compliant, with solder-friendly
plating
*See Infineon distributor for future availability.
Rev.
10,
2015-01-14
ts
PTMA180402EL
PTMA180402FL
RF Characteristics
CDMA Measurements
(tested in Infineon test fixture)
V
DD
= 28 V, I
DQ1
= 110 mA, I
DQ2
= 335 mA, P
OUT
= 4 W average, ƒ = 1960 MHz
Characteristic
Gain
Drain Efficiency
Adjacent Channel Power Ratio
Symbol
G
ps
Min
28.5
13
—
Typ
30
14
Max
—
—
–50
Unit
dB
%
dBc
η
D
ACPR
Stage 1 Characteristics
Drain Leakage Current
Conditions
V
DS
= 28 V, V
GS
= 0 V
V
DS
= 63 V, V
GS
= 0 V
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Symbol
I
DSS
I
DSS
DC Characteristics
Min
—
—
ts
Typ
—
—
—
1.6
2.5
–53
Max
1.0
10.0
1.0
—
3.0
Unit
µA
µA
µA
Ω
V
Gate Leakage Current
On-state Resistance
Operating Gate Voltage
V
GS
= 10 V, V
DS
= 0 V
V
GS
= 10 V, V
DS
= 0.1 V
V
DS
= 28 V, I
DQ
= 160 mA
I
GSS
—
R
DS(on)
V
GS
—
d
2.0
Stage 2 Characteristics
Drain-source Breakdown Voltage
Drain Leakage Current
Conditions
ue
Symbol
V
(BR)DSS
I
DSS
I
DSS
I
GSS
R
DS(on)
V
GS
Min
65
—
—
—
—
2.0
Typ
—
—
—
—
0.21
2.5
Max
—
1.0
10.0
1.0
—
3.0
Unit
V
µA
µA
µA
Ω
V
V
GS
= 0 V, I
DS
= 10 mA
Gate Leakage Current
On-state Resistance
Operating Gate Voltage
Data Sheet
di
sc
o
nt
V
DS
= 28 V, V
GS
= 0 V
V
DS
= 63 V, V
GS
= 0 V
V
GS
= 10 V, V
DS
= 0 V
V
GS
= 10 V, V
DS
= 0.1 V
V
DS
= 28 V, I
DQ
= 330 mA
in
2 of 12
Rev.
10,
2015-01-14
PTMA180402EL
PTMA180402FL
Maximum Ratings
Parameter
Drain-Source Voltage
Gate-Source Voltage
Operating Voltage
Junction Temperature
Storage Temperature Range
Overall Thermal Resistance (T
CASE
= 70°C)
P
OUT
= 40 W, I
DQ1
= 160 mA, I
DQ2
= 330 mA
1st Stage
2nd Stage
Symbol
V
DSS
V
GS
V
DD
T
J
T
STG
R
θJC
R
θJC
Value
65
–0.5 to +12
24 to 28
200
–40 to +150
5.0
Unit
V
V
V
°C
°C
°C/W
°C/W
Ordering Information
Type and Version
PTMA180402EL V1
PTMA180402EL V1 R50
PTMA180402FL V1
PTMA180402FL V1 R50
Package Type
H-33265-8
H-33265-8
H-34265-8
H-34265-8
Package Description
pr
od
uc
40
35
30
25
20
15
10
5
0
30
35
ts
1.1
Tray
Tape
Tray
Tape
IMD3
ƒ = 1930 MHz
ƒ = 1960 MHz
ƒ = 1990 MHz
40
Shipping
Themally-enhanced, slotted flange
Themally-enhanced, slotted flange
Themally-enhanced, earless flange
nt
in
Typical Performance
(data taken in a production test fixture)
ue
Themally-enhanced, earless flange
d
sc
o
V
DD
= 28 V, I
DQ1
= 110 mA, I
DQ2
= 330 mA
32
31
50
40
30
20
ƒ = 1930 MHz
ƒ = 1960 MHz
ƒ = 1990 MHz
30
35
40
45
50
10
0
CW Performance
V
DD
= 28 V, I
DQ1
= 130 mA, I
DQ2
= 330 mA
-20
-25
-30
Two-tone at Selected Frequencies
Gain
Power Added Efficiency (%)
di
Efficiency
PAE (%)
30
29
28
27
Efficiency
-40
-45
-50
-55
45
-60
Output Power (dBm)
Output Power, avg. (dBm)
Data Sheet
3 of 12
Rev.
10,
2015-01-14
IMD3 (dBc)
Gain (dB)
-35
PTMA180402EL
PTMA180402FL
Typical Performance
(cont.)
V
DD
= 28 V, I
DQ1
= 160 mA, I
DQ2
= 330 mA
-35
-40
ƒ = 1930 MHz
ƒ = 1960 MHz
ƒ = 1990 MHz
25
IS-95 at Selected Frequencies
V
DD
= 28 V, I
DQ1
= 160 mA, I
DQ2
= 330 mA,
ƒ = 1960 MHz
Adj. Ch. Power Ratio (dBc)
35
25
15
5
IS-95 at Selected Temperatures
Gain
-40
-45
-50
-55
Power Added Efficiency (%)
ACPR (dBc)
-45
-50
-55
-60
-65
10
ACPR
pr
od
uc
-5
0
2
4
-30
-35
ƒ = 1930 MHz
ƒ = 1960 MHz
ƒ = 1990 MHz
-40
-45
-50
-55
1
3
5
15
+25ºC
–25ºC
+90ºC
ts
PAE
ACPR
6
8
10
20
Gain (dB),
Power Added Efficiency (%)
Efficiency
5
0
-60
-65
0
2
4
6
8
10
Output Power (W)
Output Power, avg. (W)
in
ue
nt
Gate
–
Source Voltage vs. Temperature
V
DD
= 28 V, I
DQ1
= 110 mA, I
DQ2
= 335 mA
1.15
d
V
DD
= 28 V, I
DQ1
= 160 mA, I
DQ2
= 330 mA,
Test Mode 1 w/64 DPCH, PAR = 7.5 dB
25
20
WCDMA Performance
Normalized Gate
–
Source Voltage
(threshold), V
ACPR (dBc)
1.05
1.00
0.95
0.90
0.85
Efficiency
15
10
5
Slope =
–1.3
mV/°C
ACPR
-30
-10
10
30
50
70
90
7
9
11
0
Temperature (°C)
Output Power (W)
Data Sheet
4 of 12
Rev.
10,
2015-01-14
Power Added Efficiency (%)
1.10
di
sc
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