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BFR93AW,115

Description
TRANS NPN 12V 35MA 5GHZ SOT323
CategoryDiscrete semiconductor    The transistor   
File Size255KB,14 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
Environmental Compliance
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BFR93AW,115 Overview

TRANS NPN 12V 35MA 5GHZ SOT323

BFR93AW,115 Parametric

Parameter NameAttribute value
Brand NameNXP Semiconductor
Is it Rohs certified?conform to
MakerNXP
Parts packaging codeSC-70
package instructionPLASTIC, UMT3, CMPAK, S-MINI PACKAGE-3
Contacts3
Manufacturer packaging codeSOT323
Reach Compliance Codecompliant
ECCN codeEAR99
Other featuresHIGH RELIABILITY
Maximum collector current (IC)0.035 A
Collector-emitter maximum voltage12 V
ConfigurationSINGLE
Minimum DC current gain (hFE)40
highest frequency bandULTRA HIGH FREQUENCY BAND
JESD-30 codeR-PDSO-G3
JESD-609 codee3
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typeNPN
Maximum power consumption environment0.3 W
Maximum power dissipation(Abs)0.3 W
Certification statusNot Qualified
surface mountYES
Terminal surfaceTin (Sn)
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperature40
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)5000 MHz
DISCRETE SEMICONDUCTORS
DATA SHEET
BFR93AW
NPN 5 GHz wideband transistor
Product specification
Supersedes data of November 1992
1995 Sep 18

BFR93AW,115 Related Products

BFR93AW,115 BFR93AW-T
Description TRANS NPN 12V 35MA 5GHZ SOT323 TRANSISTOR UHF BAND, Si, NPN, RF SMALL SIGNAL TRANSISTOR, PLASTIC, S-MINI, SC-70, 3 PIN, BIP RF Small Signal
Maker NXP NXP
Parts packaging code SC-70 SC-70
package instruction PLASTIC, UMT3, CMPAK, S-MINI PACKAGE-3 SMALL OUTLINE, R-PDSO-G3
Contacts 3 3
Reach Compliance Code compliant unknown
ECCN code EAR99 EAR99
Other features HIGH RELIABILITY HIGH RELIABILITY
Maximum collector current (IC) 0.035 A 0.035 A
Collector-emitter maximum voltage 12 V 12 V
Configuration SINGLE SINGLE
Minimum DC current gain (hFE) 40 40
highest frequency band ULTRA HIGH FREQUENCY BAND ULTRA HIGH FREQUENCY BAND
JESD-30 code R-PDSO-G3 R-PDSO-G3
Number of components 1 1
Number of terminals 3 3
Maximum operating temperature 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE
Polarity/channel type NPN NPN
Maximum power consumption environment 0.3 W 0.3 W
Certification status Not Qualified Not Qualified
surface mount YES YES
Terminal form GULL WING GULL WING
Terminal location DUAL DUAL
transistor applications AMPLIFIER AMPLIFIER
Transistor component materials SILICON SILICON
Nominal transition frequency (fT) 5000 MHz 5000 MHz
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