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TS10K60HD3G

Description
BRIDGE RECT 1PHASE 600V 10A TS4K
Categorysemiconductor    Discrete semiconductor   
File Size193KB,4 Pages
ManufacturerTaiwan Semiconductor
Websitehttp://www.taiwansemi.com/
Environmental Compliance
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TS10K60HD3G Overview

BRIDGE RECT 1PHASE 600V 10A TS4K

TS10K60HD3G Parametric

Parameter NameAttribute value
Diode typeSimplex
technologystandard
Voltage - Peak Reverse (Maximum)600V
Current - average rectification (Io)10A
Voltage at different If - Forward (Vf1.1V @ 10A
Current at different Vr - Reverse leakage current10µA @ 600V
Operating temperature-55°C ~ 150°C(TJ)
Installation typeThrough hole
Package/casing4-SIP,GBL
Supplier device packagingTS4K
TS10K40 - TS10K80
Taiwan Semiconductor
CREAT BY ART
10A, 400V - 800V Glass Passivated Bridge Rectifiers
FEATURES
- Glass passivated junction
- Ideal for printed circuit board
- Typical IR less than 0.1μA
- High surge current capability
- UL Recognized File # E-326243
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21
+
~
~ –
TS4K
MECHANICAL DATA
Case:
TS4K
Molding compound, UL flammability classification rating 94V-0
Part no. with suffix "H" means AEC-Q101 qualified
Packing code with suffix "G" means green compound (halogen-free)
Terminal:
Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 2 whisker test
Polarity:
Polarity as marked on the body
Mounting torque:
8.17 in-lbs maximum
Weight:
4 g (approximately)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(T
A
=25°C unless otherwise noted)
PARAMETER
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load
Rating for fusing (t<8.3ms)
Maximum instantaneous forward voltage I
F
=5A
(Note 1)
I
F
=10A
Maximum reverse current @ rated V
R
Typical thermal resistance
Operating junction temperature range
Storage temperature range
Note 1: Pulse test with PW=300μs, 1% duty cycle
T
J
=25°C
T
J
=125°C
SYMBOL
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
I
2
t
V
F
I
R
R
θJC
T
J
T
STG
TS10K40
400
280
400
TS10K60
600
420
600
10
150
93
1.0
1.1
10
500
2.3
- 55 to +150
- 55 to +150
TS10K80
800
560
800
UNIT
V
V
V
A
A
A
2
s
V
μA
°C/W
°C
°C
Document Number: DS_D1312001
Version: E15

TS10K60HD3G Related Products

TS10K60HD3G TS10K40 D3G TS10K40HD3G TS10K80HD3G TS10K80 D3G TS10K60 D3G
Description BRIDGE RECT 1PHASE 600V 10A TS4K BRIDGE RECT 1PHASE 400V 10A TS4K BRIDGE RECT 1PHASE 400V 10A TS4K BRIDGE RECT 1PHASE 800V 10A TS4K BRIDGE RECT 1PHASE 800V 10A TS4K BRIDGE RECT 1PHASE 600V 10A TS4K
Diode type Simplex Simplex Simplex Simplex Simplex Simplex
technology standard standard standard standard standard standard
Voltage - Peak Reverse (Maximum) 600V 400V 400V 800V 800V 600V
Current - average rectification (Io) 10A 10A 10A 10A 10A 10A
Voltage at different If - Forward (Vf 1.1V @ 10A 1.1V @ 10A 1.1V @ 10A 1.1V @ 10A 1V @ 2A 1V @ 2A
Current at different Vr - Reverse leakage current 10µA @ 600V 10µA @ 400V 10µA @ 400V 10µA @ 800V 10µA @ 800V 10µA @ 600V
Operating temperature -55°C ~ 150°C(TJ) -55°C ~ 150°C(TJ) -55°C ~ 150°C(TJ) -55°C ~ 150°C(TJ) -55°C ~ 150°C(TJ) -55°C ~ 150°C(TJ)
Installation type Through hole Through hole Through hole Through hole Through hole Through hole
Package/casing 4-SIP,GBL 4-SIP,GBL 4-SIP,GBL 4-SIP,GBL 4-SIP,GBL 4-SIP,GBL
Supplier device packaging TS4K TS4K TS4K TS4K TS4K TS4K
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