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NRVUA220VT3G

Description
DIODE GEN PURP 200V 2A SMA
CategoryDiscrete semiconductor    diode   
File Size97KB,5 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
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NRVUA220VT3G Overview

DIODE GEN PURP 200V 2A SMA

NRVUA220VT3G Parametric

Parameter NameAttribute value
Brand NameON Semiconductor
Is it lead-free?Lead free
MakerON Semiconductor
package instructionSMA, 2 PIN
Manufacturer packaging code403D-02
Reach Compliance Codenot_compliant
Factory Lead Time5 weeks
Other featuresFREE WHEELING DIODE
applicationULTRA FAST RECOVERY POWER
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)0.95 V
JESD-30 codeR-PDSO-J2
JESD-609 codee3
Humidity sensitivity level1
Maximum non-repetitive peak forward current40 A
Number of components1
Phase1
Number of terminals2
Maximum operating temperature175 °C
Minimum operating temperature-65 °C
Maximum output current2 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
GuidelineAEC-Q101
Maximum repetitive peak reverse voltage200 V
Maximum reverse current2 µA
Maximum reverse recovery time0.035 µs
surface mountYES
Terminal surfaceTin (Sn)
Terminal formJ BEND
Terminal locationDUAL
MURA215, SURA8215,
MURA220, NRVUA220V,
SURA8220
Surface Mount
Ultrafast Power Rectifiers
Ideally suited for high voltage, high frequency rectification, or as
free wheeling and protection diodes in surface mount applications
where compact size and weight are critical to the system.
Features
www.onsemi.com
ULTRAFAST RECTIFIERS
2 AMPERES, 150−200 VOLTS
Small Compact Surface Mountable Package with J−Bend Leads
Rectangular Package for Automated Handling
High Temperature Glass Passivated Junction
Low Forward Voltage Drop (0.77 V Max @ 2.0 A, T
J
= 150°C)
Low Forward Voltage Drop (0.71 V Max @ 1.0 A, T
J
= 150°C)
NRVUA and SURA8 Prefixes for Automotive and Other
Applications Requiring Unique Site and Control Change
Requirements; AEC−Q101 Qualified and PPAP Capable*
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Mechanical Characteristics:
SMA
CASE 403D
MARKING DIAGRAM
U5x
AYWW
G
U5x = Device Code
x = C for MURA215
= D for MURA220
A
= Assembly Location**
Y
= Year
WW = Work Week
G
= Pb−Free Package
** The Assembly Location Code (A) is front side
optional. In cases where the Assembly Location is
stamped in the package bottom (molding ejecter
pin), the front side assembly code may be blank.
Case: Epoxy, Molded
Weight: 70 mg (Approximately)
Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
Lead and Mounting Surface Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
Polarity: Polarity Band Indicates Cathode Lead
ESD Protection:
Human Body Model > 4000 V (Class 3)
Machine Model > 400 V (Class C)
ORDERING INFORMATION
Device
MURA215T3G
SURA8215T3G*
MURA220T3G
NRVUA220VT3G*
SURA8220T3G*
Package
SMA
(Pb−Free)
SMA
(Pb−Free)
SMA
(Pb−Free)
SMA
(Pb−Free)
SMA
(Pb−Free)
Shipping
5,000/Tape & Reel
5,000/Tape & Reel
5,000/Tape & Reel
5,000/Tape & Reel
5,000/Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
©
Semiconductor Components Industries, LLC, 2016
May, 2017
Rev. 7
1
Publication Order Number:
MURA215T3/D

NRVUA220VT3G Related Products

NRVUA220VT3G SURA8220T3G MURA215T3G
Description DIODE GEN PURP 200V 2A SMA DC reverse withstand voltage (Vr): 200V Average rectified current (Io): 2A Forward voltage drop (Vf): 950mV @ 2A Reverse recovery time (trr): 35ns Reverse recovery time (trr): 35ns DC reverse withstand voltage (Vr): 150V Average rectified current (Io): 2A Forward voltage drop (Vf): 950mV @ 2A
Brand Name ON Semiconductor ON Semiconductor ON Semiconductor
Is it lead-free? Lead free Lead free Lead free
package instruction SMA, 2 PIN SMA, 2 PIN SMA, 2 PIN
Manufacturer packaging code 403D-02 403D-02 403D-02
Reach Compliance Code not_compliant not_compliant not_compliant
Factory Lead Time 5 weeks 9 weeks 1 week
application ULTRA FAST RECOVERY POWER ULTRA FAST RECOVERY POWER GENERAL PURPOSE
Configuration SINGLE SINGLE SINGLE
Diode component materials SILICON SILICON SILICON
Diode type RECTIFIER DIODE RECTIFIER DIODE RECTIFIER DIODE
Maximum forward voltage (VF) 0.95 V 0.95 V 0.95 V
JESD-30 code R-PDSO-J2 R-PDSO-J2 R-PDSO-C2
JESD-609 code e3 e3 e3
Maximum non-repetitive peak forward current 40 A 40 A 40 A
Number of components 1 1 1
Phase 1 1 1
Number of terminals 2 2 2
Maximum operating temperature 175 °C 175 °C 175 °C
Minimum operating temperature -65 °C -65 °C -65 °C
Maximum output current 2 A 2 A 2 A
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
Maximum repetitive peak reverse voltage 200 V 200 V 150 V
Maximum reverse current 2 µA 2 µA 2 µA
Maximum reverse recovery time 0.035 µs 0.035 µs 0.035 µs
surface mount YES YES YES
Terminal surface Tin (Sn) Tin (Sn) Tin (Sn)
Terminal form J BEND J BEND C BEND
Terminal location DUAL DUAL DUAL
Maker ON Semiconductor - ON Semiconductor
Other features FREE WHEELING DIODE - FREE WHEELING DIODE
Humidity sensitivity level 1 1 -
Guideline AEC-Q101 AEC-Q101 -
Contacts - 2 2
ECCN code - EAR99 EAR99
Minimum breakdown voltage - 200 V 150 V
Reverse test voltage - 200 V 150 V

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