IRF7901D1 datasheet, PDF - EEWORLD Datasheet

IRF7901D1: DescriptionMOSFET 2N-CH 30V 6.2A 8SOIC; Categorysemiconductor Discrete semiconductor; File Size424KB，9 Pages; ManufacturerInfineon; Websitehttp://www.infineon.com/

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IRF7901D1 Overview

MOSFET 2N-CH 30V 6.2A 8SOIC

Parameter Name	Attribute value
FET type	2 N-channel (dual)
FET function	logic level gate
Drain-source voltage (Vdss)	30V
Current - Continuous Drain (Id) at 25°C	6.2A
Rds On (maximum value) when different Id, Vgs	38 milliohms @ 5A, 4.5V
Vgs (th) (maximum value) when different Id	1V @ 250µA
Gate charge (Qg) at different Vgs (maximum value)	10.5nC @ 5V
Input capacitance (Ciss) at different Vds (maximum value)	780pF @ 16V
Power - Max	2W
Operating temperature	-55°C ~ 150°C（TJ）
Installation type	surface mount
Package/casing	8-SOIC (0.154", 3.90mm wide)
Supplier device packaging	8-SO

PD- 93844C

IRF7901D1

www.irf.com

1

10/18/04

	IRF7901D1	IRF7901D1TR
Description	MOSFET 2N-CH 30V 6.2A 8SOIC	MOSFET 2N-CH 30V 6.2A 8SOIC
FET type	2 N-channel (dual)	2 N-channel (dual)
FET function	logic level gate	logic level gate
Drain-source voltage (Vdss)	30V	30V
Current - Continuous Drain (Id) at 25°C	6.2A	6.2A
Rds On (maximum value) when different Id, Vgs	38 milliohms @ 5A, 4.5V	38 milliohms @ 5A, 4.5V
Vgs (th) (maximum value) when different Id	1V @ 250µA	1V @ 250µA
Gate charge (Qg) at different Vgs (maximum value)	10.5nC @ 5V	10.5nC @ 5V
Input capacitance (Ciss) at different Vds (maximum value)	780pF @ 16V	780pF @ 16V
Power - Max	2W	2W
Operating temperature	-55°C ~ 150°C（TJ）	-55°C ~ 150°C（TJ）
Installation type	surface mount	surface mount
Package/casing	8-SOIC (0.154", 3.90mm wide)	8-SOIC (0.154", 3.90mm wide)
Supplier device packaging	8-SO	8-SO

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