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KSP05 / KSP06 — NPN Epitaxial Silicon Transistor
September 2015
KSP05 / KSP06
NPN Epitaxial Silicon Transistor
Features
• Collector-Emitter Voltage: V
CEO
= KSP05: 60 V
KSP06: 80 V
• Collector Dissipation: P
C
(max.) = 625 mW
• Complement to KSP55/56
12
1
TO-92
1. Emitter
2. Base
3. Collector
3
3
2
Straight Lead
Bulk Packing
Bent Lead
Tape & Reel
Ammo Packing
Ordering Information
Part Number
KSP05TA
KSP06BU
KSP06TA
Top Mark
KSP05
KSP06
KSP06
Package
TO-92 3L
TO-92 3L
TO-92 3L
Packing Method
Ammo
Bulk
Ammo
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at T
A
= 25°C unless otherwise noted.
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
T
J
T
STG
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Parameter
KSP05
KSP06
KSP05
KSP06
Value
60
80
60
80
4
500
625
150
-55 to 150
Unit
V
V
V
mA
mW
°C
°C
Collector Power Dissipation
Junction Temperature
Storage Temperature
© 2002 Fairchild Semiconductor Corporation
KSP05 / KSP06 Rev. 1.4
www.fairchildsemi.com
KSP05 / KSP06 — NPN Epitaxial Silicon Transistor
Electrical Characteristics
Values are at T
A
= 25°C unless otherwise noted.
Symbol
BV
CEO
BV
EBO
I
CBO
I
CEO
h
FE
V
CE
(sat)
V
BE
(on)
f
T
Parameter
Collector-Emitter
Breakdown Voltage
(1)
KSP05
KSP06
KSP05
KSP06
Conditions
I
C
= 1 mA, I
B
= 0
I
E
= 100
μA,
I
C
= 0
V
CB
= 60 V, I
E
= 0
V
CB
= 80 V, I
E
= 0
V
CE
= 60 V, I
B
= 0
V
CE
= 1 V, I
C
= 10 mA
V
CE
= 1 V, I
C
= 100 mA
I
C
= 100 mA, I
B
= 10 mA
V
CE
= 1 V, I
C
= 100 mA
V
CE
= 2 V, I
C
= 10 mA,
f = 100 MHz
Min.
60
80
4
Max.
Unit
V
V
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
Collector Cut-Off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
Current Gain Bandwidth Product
0.1
0.1
0.1
50
50
0.25
1.2
100
μA
μA
V
V
MHz
Note:
1. Pulse test: pulse width
≤
300
μs,
duty cycle
≤
2%.
© 2002 Fairchild Semiconductor Corporation
KSP05 / KSP06 Rev. 1.4
www.fairchildsemi.com
2
KSP05 / KSP06 — NPN Epitaxial Silicon Transistor
Typical Performance Characteristics
V
BE
(sat), V
CE
(sat)[V], SATURATION VOLTAGE
1000
10
V
CE
= 1V
I
C
= 10 I
B
h
FE
, DC CURRENT GAIN
1
V
BE
(sat)
100
0.1
V
CE
(sat)
10
1
10
100
1000
0.01
1
10
100
1000
I
C
[mA], COLLECTOR CURRENT
I
C
[mA], COLLECTOR CURRENT
Figure 1. DC Current Gain
Figure 2. Collector-Emitter Saturation Voltage and
Base-Emitter Saturation Voltage
1000
f
T
[MHz], CURRENT GAIN-BANDWIDTH PRODUCT
1000
V
CE
= 1V
I
C
[
μ
A], COLLECTOR CURRENT
V
CE
= 2V
100
100
10
1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
10
1
10
100
1000
V
BE
[V], BASE-EMITTER VOLTAGE
I
C
[mA], COLLECTOR CURRENT
Figure 3. Base-Emitter On Voltage
Figure 4. Current Gain Bandwidth Product
© 2002 Fairchild Semiconductor Corporation
KSP05 / KSP06 Rev. 1.4
www.fairchildsemi.com
3
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