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DTA124ECA-TP

Description
TRANS PREBIAS PNP 200MW SOT23
Categorysemiconductor    Discrete semiconductor   
File Size224KB,3 Pages
ManufacturerMicro Commercial Co
Environmental Compliance
Download Datasheet Parametric View All

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DTA124ECA-TP Overview

TRANS PREBIAS PNP 200MW SOT23

DTA124ECA-TP Parametric

Parameter NameAttribute value
Transistor typePNP - Pre-biased
Current - Collector (Ic) (Maximum)100mA
Voltage - collector-emitter breakdown (maximum)50V
Resistor - Substrate (R1)22 kOhms
Resistor - Emitter Base (R2)22 kOhms
DC current gain (hFE) at different Ic, Vce (minimum value)56 @ 5mA,5V
Vce saturation value (maximum value) when different Ib,Ic300mV @ 500µA,10mA
Current - collector cutoff (maximum)500nA
Frequency - Transition250MHz
Power - Max200mW
Installation typesurface mount
Package/casingTO-236-3,SC-59,SOT-23-3
Supplier device packagingSOT-23
MCC
Micro Commercial Components
TM
  omponents
20736 Marilla
Street Chatsworth

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$ %    !"#
DTA124ECA
Features
Absolute maximum ratings @ 25
Symbol
V
CC
V
IN
I
O
I
C(MAX)
P
d
T
j
T
stg
Parameter
Supply voltage
Input voltage
Output current
Power dissipation
Junction temperature
Storage temperature
Lead Free Finish/RoHS Compliant ("P" Suffix designates
RoHS Compliant. See ordering information)
Epoxy meets UL 94 V-0 flammability rating
Moisure Sensitivity Level 1
Built-in bias resistors enable the configuration of an inverter circuit
without connecting external input resistors
The bias resistors consist of thin-film resistors with complete
isolation to allow negative biasing of the input. They also have the
advantage of almost completely eliminating parasitic effects.
Only the on/off conditions need to be set for operation, making
device design easy
Halogen
free available upon request by adding suffix "-HF"
Min
---
-40
---
---
---
-55
Typ
-50
---
-30
-100
200
150
---
Max
---
10
---
---
---
150
Unit
V
V
mA
mW
PNP
Digital Transistors
SOT-23
A
D
3
1
C
2
B
1. IN
2. GND
3. OUT
F
E
G
H
J
Electrical Characteristics @ 25
Symbol
V
I(off)
V
I(on)
V
O(on)
I
I
I
O(off)
G
I
R
1
R
2
/R
1
f
T
Parameter
Input voltage (V
CC
=-5V, I
O
=-100­A)
(V
O
=-0.2V, I
O
=-5mA)
Output voltage (I
O
/I
I
=-10mA/-0.5mA
Input current (V
I
=-5V)
Output current (V
CC
=-50V, V
I
=0)
DC current gain (V
O
=-5V, I
O
=-5mA)
Input resistance
Resistance ratio
Transition frequency
(V
CE
=-10V, I
E
=5mA, f=100MHz)
Min
---
-3.0
---
---
---
56
15.4
0.8
---
Typ
---
---
---
---
---
---
22
1.0
250
Max
-0.5
---
-0.3
-0.36
-0.5
---
28.6
1.2
---
Unit
V
V
V
mA
­A
MHz
K
DIMENSIONS
INCHES
MIN
.110
.083
.047
.035
.070
.018
.0005
.035
.003
.015
MM
MAX
.120
.104
.055
.041
.081
.024
.0039
.044
.007
.020
MIN
2.80
2.10
1.20
.89
1.78
.45
.013
.89
.085
.37
MAX
3.04
2.64
1.40
1.03
2.05
.60
.100
1.12
.180
.51
NOTE
DIM
A
B
C
D
E
F
G
H
J
K
*Marking: 15
Suggested Solder
Pad Layout
.031
.800
.035
.900
.079
2.000
inches
mm
.037
.950
.037
.950
www.mccsemi.com
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2013/01/01
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