UNISONIC TECHNOLOGIES CO., LTD
30N06
30 Amps, 60 Volts
N-CHANNEL POWER MOSFET
1
MOSFET
DESCRIPTION
The UTC 30N06 is a low voltage MOSFET and is designed to
have better characteristics, such as fast switching time, low gate
charge, low on-state resistance and excellent avalanche
characteristics. This power MOSFET is usually used at automotive
applications in power supplies, high efficient DC to DC converters
and battery operated products.
TO-220
1
TO-220F
FEATURES
* R
DS(ON)
= 40mΩ@V
GS
= 10 V
* Ultra low gate charge ( typical 20 nC )
* Low reverse transfer Capacitance ( C
RSS
= typical 80 pF )
* Fast switching capability
* 100% avalanche energy specified
* Improved dv/dt capability
*Pb-free plating product number: 30N06L
SYMBOL
2.Drain
1.Gate
3.Source
ORDERING INFORMATION
Order Number
Package
Normal
Lead Free Plating
30N06-TA3-T
30N06L-TA3-T
TO-220
30N06-TF3-T
30N06L-TF3-T
TO-220F
Note: Pin Assignment: G: Gate D: Drain S: Source
Pin Assignment
1
2
3
G
D
S
G
D
S
Packing
Tube
Tube
30N06L-TA3-T
(1)Packing Type
(2)Package Type
(3)Lead Plating
(1) T: Tube, R: Tape Reel
(2) TA3: TO-220, TF3: TO-220F
(3) L: Lead Free Plating Blank: Pb/Sn
,
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QW-R502-087,A
30N06
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
V
DSS
V
GSS
MOSFET
RATINGS
UNIT
Drain-Source Voltage
60
V
Gate to Source Voltage
±20
V
T
C
= 25℃
30
A
Continuous Drain Current
I
D
T
C
= 100℃
21.3
A
Pulsed Drain Current (Note 1)
I
DM
120
A
Avalanche Energy, Single Pulsed (Note 2)
E
AS
300
mJ
Repetitive Avalanche Energy (Note 1)
E
AR
8
mJ
Peak Diode Recovery dv/dt (Note 3)
dv/dt
7.5
V/ns
Total Power Dissipation (T
C
= 25℃)
80
W
P
D
0.53
W/℃
Derating Factor Above 25℃
Operation Junction Temperature
T
J
-55 ~ +150
℃
Storage Temperature
T
STG
-55 ~ +150
℃
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
PARAMETER
Thermal Resistance, Junction-to-Case
Thermal Resistance, Case-to-Sink
Thermal Resistance, Junction-to-Ambient
SYMBOL
θ
JC
θ
CS
θ
JA
MIN
TYP
0.5
62.5
MAX
1.8
UNIT
°C/W
°C/W
°C/W
ELECTRICAL CHARACTERISTICS
(T
C
= 25℃, unless otherwise specified)
PARAMETER
Off Characteristics
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage
Forward
Current
Reverse
Breakdown Voltage Temperature
Coefficient
On Characteristics
Gate Threshold Voltage
Static Drain-Source On-State
Resistance
Dynamic Characteristics
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge (Miller Charge)
SYMBOL
BV
DSS
I
DSS
I
GSS
TEST CONDITIONS
V
GS
= 0 V, I
D
= 250 µA
V
DS
= 60 V, V
GS
= 0 V
V
DS
= 48 V, V
GS
= 0 V, T
J
= 150℃
V
GS
= 20V, V
DS
= 0 V
V
GS
= -20V, V
DS
= 0 V
MIN TYP MAX UNIT
60
1
10
100
-100
0.06
2.0
32
800
300
80
12
79
50
52
20
6
9
4.0
40
V
µA
µA
nA
nA
V/℃
V
mΩ
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
△
BV
DSS
/△T
J
I
D
= 250 µA, Referenced to 25℃
V
GS(TH)
R
DS(ON)
C
ISS
C
OSS
C
RSS
t
D(ON)
t
R
t
D(OFF)
t
F
Q
G
Q
GS
Q
GD
V
DS
= V
GS
, I
D
= 250 µA
V
GS
= 10 V, I
D
= 15 A
V
GS
= 0 V, V
DS
= 25 V, f = 1MHz
V
DD
= 30V, I
D
=15 A, V
GS
=10V
(Note 4, 5)
V
DS
= 60V, V
GS
= 10 V, I
D
= 24A
(Note 4, 5)
30
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QW-R502-087,A
30N06
ELECTRICAL CHARACTERISTICS (Cont.)
PARAMETER
SYMBOL
Source-Drain Diode Ratings and Characteristics
Diode Forward Voltage
V
SD
Maximum Continuous Drain-Source
Diode Forward Current
I
S
TEST CONDITIONS
I
S
= 30A, V
GS
= 0 V
Integral Reverse p-n Junction Diode in
the MOSFET
D
MOSFET
MIN TYP MAX UNIT
1.4
30
V
A
Maximum Pulsed Drain-Source Diode
Forward Current
I
SM
G
S
120
A
Reverse Recovery Time
t
RR
I
S
= 30A, V
GS
= 0 V
dI
F
/ dt = 100 A/µs (Note4)
Reverse Recovery Charge
Q
RR
Note 1. Repeativity rating: pulse width limited by junction temperature
2. L=19.5mH, I
AS
=30A, R
G
=20Ω, Starting T
J
=25℃
3. I
SD
≤50A,
di/dt≤300A/µs, V
DD
≤BV
DSS
, Starting T
J
=25℃
4. Pulse Test: Pulse Width≤300µs,Duty Cycle≤2%
5. Essentially independent of operating temperature.
40
70
ns
µC
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QW-R502-087,A
30N06
TEST CIRCUITS AND WAVEFORMS
MOSFET
D.U.T.
+
V
DS
-
+
-
L
R
G
Driver
V
GS
Same Type
as D.U.T.
* dv/dt controlled by R
G
* I
SD
controlled by pulse period
* D.U.T.-Device Under Test
V
DD
Fig. 1A Peak Diode Recovery dv/dt Test Circuit
V
GS
(Driver)
P.W.
Period
D=
P. W.
Period
V
GS
= 10V
I
FM
, Body Diode Forward Current
I
SD
(D.U.T.)
I
RM
Body Diode Reverse Current
di/dt
Body Diode Recovery dv
/dt
V
DS
(D.U.T.)
V
DD
Body Diode
Forward Voltage Drop
Fig. 1B Peak Diode Recovery dv/dt Waveforms
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QW-R502-087,A
30N06
TEST CIRCUITS AND WAVEFORMS (Cont.)
R
L
V
DD
MOSFET
V
DS
V
GS
R
G
V
DS
90%
10V
Pulse Width
≤
1μs
Duty Factor
≤0.1%
D.U.T.
V
GS
10%
t
D(ON )
t
R
t
D (OFF)
t
F
Fig. 2A Switching Test Circuit
Fig. 2B Switching Waveforms
50kΩ
12V
0.2μF
0.3μF
Same Type
as D.U.T.
10V
V
DS
Q
GS
Q
G
Q
GD
V
GS
DUT
1mA
V
G
Charge
Fig. 3A Gate Charge Test Circuit
Fig. 3B Gate Charge Waveform
L
V
DS
BV
DSS
R
G
V
DD
D.U.T.
10V
t
p
I
AS
t
p
Time
Fig. 4A Unclamped Inductive Switching Test Circuit
Fig. 4B Unclamped Inductive Switching Waveforms
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QW-R502-087,A
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