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30HFU-500

Description
30 A, 500 V, SILICON, RECTIFIER DIODE, DO-203AB
CategoryDiscrete semiconductor    diode   
File Size198KB,1 Pages
ManufacturerTransys Electronics Limited
Websitehttp://www.transyselectronics.com
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30 A, 500 V, SILICON, RECTIFIER DIODE, DO-203AB

30HFU-500 Parametric

Parameter NameAttribute value
MakerTransys Electronics Limited
Reach Compliance Codeunknown
Is SamacsysN
Base Number Matches1
30HFU Series
Super Fast Recovery Rectifier
V
RRM
= 100-600V, I
F(AV)
= 30Amp,VF = 1.45V
Symbol
A
K
Cathode to Stud Shown
(Anode to Stud add Suffix R)
MAXIMUM RATINGS
Parameter
(Tj = 25 C unless stated otherwise)
30HFU 30HFU
30HFU
(R) -100 (R) - 200 (R) - 300
30HFU
(R) - 400
30HFU
(R) - 500
30HFU
(R) -600
Symbol
V
RRM
I
F
(AV)
I
FSM
I
2
T
T
(STG)
Tj
Unit
Volt
Amp
Amp
Repetitive Peak Reverse Voltage
Maximum Average On-State Current
Peak Forward Surge Current 8.3mS
Maximum I
2
T for Fusing 8.3ms
Maximum Storage Temperature Range
Maximum Junction Temperature Range
100
200
300
30.0
500
730
400
500
600
A
2
/S
O
-40 to +125
-40 to +150
C
C
O
ELECTRICAL CHARACTERISICS at
Parameter
Tj = 25 C Maximum. Unless stated Otherwise
Condition
Symbol
V
FM(1)
V
FM(2)
I
DRM
t
RR
V
F(TD)
R
TH (J-c)
M
T
Wt
Min
I
FM
=30 Amps
I
FM
=30 Amps Tj = 125
O
C
Value
Typ
Max
1.45
1.25
35
60
80
1.08
0.35
1.2
7.0
Unit
Volt
Volt
µA
nS
Volt
O
Maximum Forward Voltage (1)
Maximum Forward Voltage (2)
Repetitive Peak Off- State Current
Reverse Recovery Time
Maximum Value of Threshold Voltage
Thermal Resistance (Junction to Case)
Mounting Torque
Weight
V
R
= V
RRM
C/W
NM
grms
Mechanical Outline
0.90
(0.03)
17.25
(0.68)
0 4.0 (0.16) Min
7.0 (0.27) max
6.1 (0.84) min
10.20 (0.401) min
11.4 (0.45) max
14.86 (0.585) Max
12.80 (0.0.503) Min
C
L
4.0 (0.16) min
25.4 (1.00) max
10.6 (0.42) min
11.4 (0.46) max
1/4" 28 UNF - 2A
Metric M6 x 1
Case: DO-203AB (DO-5)
Case: Metal/ Glass to Metal Seal
All Dimensions in Millimeters (Inches)
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