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30ETH06STRLPBF

Description
30 A, 600 V, SILICON, RECTIFIER DIODE, TO-263AB
CategoryDiscrete semiconductor    diode   
File Size286KB,8 Pages
ManufacturerInternational Rectifier ( Infineon )
Websitehttp://www.irf.com/
Environmental Compliance
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30ETH06STRLPBF Overview

30 A, 600 V, SILICON, RECTIFIER DIODE, TO-263AB

30ETH06STRLPBF Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerInternational Rectifier ( Infineon )
Parts packaging codeD2PAK
package instructionR-PSSO-G2
Contacts3
Reach Compliance Codeunknown
Other featuresFREE WHEELING DIODE, LOW LEAKAGE CURRENT, SNUBBER DIODE
applicationHYPERFAST SOFT RECOVERY
Shell connectionCATHODE
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)1.75 V
JEDEC-95 codeTO-263AB
JESD-30 codeR-PSSO-G2
Maximum non-repetitive peak forward current200 A
Number of components1
Phase1
Number of terminals2
Maximum operating temperature175 °C
Minimum operating temperature-65 °C
Maximum output current30 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Certification statusNot Qualified
Maximum repetitive peak reverse voltage600 V
Maximum reverse recovery time0.035 µs
surface mountYES
Terminal formGULL WING
Terminal locationSINGLE
Base Number Matches1
Bulletin PD-21064 rev. B 11/06
30ETH06SPbF
30ETH06-1PbF
Hyperfast Rectifier
Features
Hyperfastfast Recovery Time
Low Forward Voltage Drop
Low Leakage Current
125°C Operating Junction Temperature
Dual Diode Center Tap
Lead-Free ("PbF" suffix)
t
rr
= 28ns typ.
I
F(AV)
= 30Amp
V
R
= 600V
Description/ Applications
State of the art Hyperfast recovery rectifiers designed with optimized performance of forward voltage drop, Hyperfast
recover time, and soft recovery.
The planar structure and the platinum doped life time control guarantee the best overall performance, ruggedness
and reliability characteristics.
These devices are intended for use in PFC Boost stage in the AC-DC section of SMPS, inverters or as freewheeling
diodes.
The IR extremely optimized stored charge and low recovery current minimize the switching losses and reduce over
dissipation in the switching element and snubbers.
Absolute Maximum Ratings
Parameters
V
RRM
I
F(AV)
I
FSM
T
J
T
STG
Peak Repetitive Reverse Voltage
Average Rectifier Forward Current
Non Repetitive Peak Surge Current
Operating Junction Temperature
Operating Storage Temperature
@ T
C
= 103°C
@ T
J
= 25°C
Max
600
30
200
- 65 to 125
- 65 to 150
Units
V
A
°C
Case Styles
30ETH06SPbF
30ETH06-1PbF
Base
Cathode
2
2
1
3
1
3
N/C
Anode
N/C
Anode
D
2
PAK
www.irf.com
TO-262
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