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30CTQ060STRR

Description
15 A, 60 V, SILICON, RECTIFIER DIODE
CategoryDiscrete semiconductor    diode   
File Size256KB,7 Pages
ManufacturerInternational Rectifier ( Infineon )
Websitehttp://www.irf.com/
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30CTQ060STRR Overview

15 A, 60 V, SILICON, RECTIFIER DIODE

30CTQ060STRR Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerInternational Rectifier ( Infineon )
Parts packaging codeTO-263
package instructionR-PSSO-G2
Contacts3
Reach Compliance Codecompliant
ECCN codeEAR99
Other featuresFREE WHEELING DIODE, HIGH RELIABILITY
applicationGENERAL PURPOSE
Shell connectionCATHODE
ConfigurationCOMMON CATHODE, 2 ELEMENTS
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)0.71 V
JESD-30 codeR-PSSO-G2
JESD-609 codee0
Humidity sensitivity level1
Maximum non-repetitive peak forward current1000 A
Number of components2
Phase1
Number of terminals2
Maximum operating temperature150 °C
Maximum output current15 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)225
Certification statusNot Qualified
Maximum repetitive peak reverse voltage60 V
Maximum reverse current45000 µA
surface mountYES
technologySCHOTTKY
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formGULL WING
Terminal locationSINGLE
Maximum time at peak reflow temperature30
Base Number Matches1
Bulletin PD-21018 rev. A 07/06
30CTQ...SPbF
30CTQ...-1PbF
SCHOTTKY RECTIFIER
30 Amp
I
F(AV)
= 30Amp
V
R
= 50 - 60V
Major Ratings and Characteristics
Characteristics
I
F(AV)
Rectangular
waveform
V
RRM
I
FSM
@ tp = 5
μs
sine
V
F
T
J
@ 15 Apk, T
J
= 125°C
(per leg)
range
Description/ Features
Units
A
V
A
V
This center tap Schottky rrectifier has been optimized for very
low forward voltage drop, with moderate leakage. The
proprietary barrier technology allows for reliable operation
up to 150° C junction temperature. Typical applications are
in switching power supplies, converters, free-wheeling
diodes, and reverse battery protection.
150° C T
J
operation
Center tap configuration
Very low forward voltage drop
High purity, high temperature epoxy encapsulation for
enhanced mechanical strength and moisture resistance
High frequency operation
Guard ring for enhanced ruggedness and long term
reliability
Lead-Free ("PbF" suffix)
Values
30
50 - 60
1000
0.56
- 55 to 150
°C
Case Styles
30CTQ...SPbF
30CTQ...-1PbF
Base
Common
Cathode
2
Base
Common
Cathode
2
1
Anode
2
Common
Cathode
3
Anode
1
Anode
2
Common
Cathode
3
Anode
D
2
PAK
www.irf.com
TO-262
1
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