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30CTQ050-1PBF

Description
50 V, SILICON, RECTIFIER DIODE
CategoryDiscrete semiconductor    diode   
File Size256KB,7 Pages
ManufacturerInternational Rectifier ( Infineon )
Websitehttp://www.irf.com/
Environmental Compliance
Download Datasheet Parametric View All

30CTQ050-1PBF Overview

50 V, SILICON, RECTIFIER DIODE

30CTQ050-1PBF Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerInternational Rectifier ( Infineon )
Parts packaging codeTO-262
package instructionR-PSIP-T3
Contacts3
Reach Compliance Codecompliant
ECCN codeEAR99
Other featuresFREE WHEELING DIODE, HIGH RELIABILITY
applicationGENERAL PURPOSE
Shell connectionCATHODE
ConfigurationCOMMON CATHODE, 2 ELEMENTS
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)0.56 V
JESD-30 codeR-PSIP-T3
JESD-609 codee3
Humidity sensitivity level1
Maximum non-repetitive peak forward current1000 A
Number of components2
Phase1
Number of terminals3
Maximum operating temperature150 °C
Minimum operating temperature-55 °C
Maximum output current15 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formIN-LINE
Peak Reflow Temperature (Celsius)260
Certification statusNot Qualified
Maximum repetitive peak reverse voltage50 V
surface mountNO
technologySCHOTTKY
Terminal surfaceMATTE TIN OVER NICKEL
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperature40
Base Number Matches1
Bulletin PD-21018 rev. A 07/06
30CTQ...SPbF
30CTQ...-1PbF
SCHOTTKY RECTIFIER
30 Amp
I
F(AV)
= 30Amp
V
R
= 50 - 60V
Major Ratings and Characteristics
Characteristics
I
F(AV)
Rectangular
waveform
V
RRM
I
FSM
@ tp = 5
μs
sine
V
F
T
J
@ 15 Apk, T
J
= 125°C
(per leg)
range
Description/ Features
Units
A
V
A
V
This center tap Schottky rrectifier has been optimized for very
low forward voltage drop, with moderate leakage. The
proprietary barrier technology allows for reliable operation
up to 150° C junction temperature. Typical applications are
in switching power supplies, converters, free-wheeling
diodes, and reverse battery protection.
150° C T
J
operation
Center tap configuration
Very low forward voltage drop
High purity, high temperature epoxy encapsulation for
enhanced mechanical strength and moisture resistance
High frequency operation
Guard ring for enhanced ruggedness and long term
reliability
Lead-Free ("PbF" suffix)
Values
30
50 - 60
1000
0.56
- 55 to 150
°C
Case Styles
30CTQ...SPbF
30CTQ...-1PbF
Base
Common
Cathode
2
Base
Common
Cathode
2
1
Anode
2
Common
Cathode
3
Anode
1
Anode
2
Common
Cathode
3
Anode
D
2
PAK
www.irf.com
TO-262
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