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30ETH06-1TRLPBF

Description
30 A, 600 V, SILICON, RECTIFIER DIODE, TO-262AA
Categorysemiconductor    Discrete semiconductor   
File Size286KB,8 Pages
ManufacturerInternational Rectifier ( Infineon )
Websitehttp://www.irf.com/
Download Datasheet Parametric View All

30ETH06-1TRLPBF Overview

30 A, 600 V, SILICON, RECTIFIER DIODE, TO-262AA

30ETH06-1TRLPBF Parametric

Parameter NameAttribute value
Number of terminals3
Number of components1
Processing package descriptionROHS COMPLIANT, MODIFIED TO-262, 3 PIN
Lead-freeYes
EU RoHS regulationsYes
stateACTIVE
packaging shapeRECTANGULAR
Package SizeIN-LINE
Terminal formTHROUGH-HOLE
terminal coatingNOT SPECIFIED
Terminal locationSINGLE
Packaging MaterialsPLASTIC/EPOXY
structureSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
applicationHYPERFAST SOFT RECOVERY
Phase1
Maximum reverse recovery time0.0350 us
Maximum repetitive peak reverse voltage600 V
Maximum average forward current30 A
Maximum non-repetitive peak forward current200 A
Bulletin PD-21064 rev. B 11/06
30ETH06SPbF
30ETH06-1PbF
Hyperfast Rectifier
Features
Hyperfastfast Recovery Time
Low Forward Voltage Drop
Low Leakage Current
125°C Operating Junction Temperature
Dual Diode Center Tap
Lead-Free ("PbF" suffix)
t
rr
= 28ns typ.
I
F(AV)
= 30Amp
V
R
= 600V
Description/ Applications
State of the art Hyperfast recovery rectifiers designed with optimized performance of forward voltage drop, Hyperfast
recover time, and soft recovery.
The planar structure and the platinum doped life time control guarantee the best overall performance, ruggedness
and reliability characteristics.
These devices are intended for use in PFC Boost stage in the AC-DC section of SMPS, inverters or as freewheeling
diodes.
The IR extremely optimized stored charge and low recovery current minimize the switching losses and reduce over
dissipation in the switching element and snubbers.
Absolute Maximum Ratings
Parameters
V
RRM
I
F(AV)
I
FSM
T
J
T
STG
Peak Repetitive Reverse Voltage
Average Rectifier Forward Current
Non Repetitive Peak Surge Current
Operating Junction Temperature
Operating Storage Temperature
@ T
C
= 103°C
@ T
J
= 25°C
Max
600
30
200
- 65 to 125
- 65 to 150
Units
V
A
°C
Case Styles
30ETH06SPbF
30ETH06-1PbF
Base
Cathode
2
2
1
3
1
3
N/C
Anode
N/C
Anode
D
2
PAK
www.irf.com
TO-262
1
System temperature detection is low
System temperature detection is low...
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