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BUK953R5-60E,127

Description
MOSFET N-CH 60V 120A TO220AB
Categorysemiconductor    Discrete semiconductor   
File Size719KB,13 Pages
ManufacturerNexperia
Websitehttps://www.nexperia.com
Environmental Compliance
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BUK953R5-60E,127 Overview

MOSFET N-CH 60V 120A TO220AB

BUK953R5-60E,127 Parametric

Parameter NameAttribute value
FET typeN channel
technologyMOSFET (metal oxide)
Drain-source voltage (Vdss)60V
Current - Continuous Drain (Id) at 25°C120A(Tc)
Drive voltage (maximum Rds On, minimum Rds On)5V,10V
Rds On (maximum value) when different Id, Vgs3.4 milliohms @ 25A, 10V
Vgs (th) (maximum value) when different Id2.1V @ 1mA
Gate charge (Qg) at different Vgs (maximum value)95nC @ 5V
Vgs (maximum value)±10V
Input capacitance (Ciss) at different Vds (maximum value)13490pF @ 25V
FET function-
Power dissipation (maximum)293W(Tc)
Operating temperature-55°C ~ 175°C(TJ)
Installation typeThrough hole
Supplier device packagingTO-220AB
Package/casingTO-220-3
BUK953R5-60E
11 September 2012
N-channel TrenchMOS logic level FET
Product data sheet
1. Product profile
1.1 General description
Logic level N-channel MOSFET in a SOT78 package using TrenchMOS technology.
This product has been designed and qualified to AEC Q101 standard for use in high
performance automotive applications.
1.2 Features and benefits
AEC Q101 compliant
Repetitive avalanche rated
Suitable for thermally demanding environments due to 175 °C rating
True logic level gate with VGS(th) rating of greater than 0.5V at 175 °C
1.3 Applications
12 V Automotive systems
Motors, lamps and solenoid control
Start-Stop micro-hybrid applications
Transmission control
Ultra high performance power switching
1.4 Quick reference data
Table 1.
Symbol
V
DS
I
D
P
tot
R
DSon
Quick reference data
Parameter
drain-source voltage
drain current
total power dissipation
Conditions
T
j
≥ 25 °C; T
j
≤ 175 °C
V
GS
= 5 V; T
mb
= 25 °C;
Fig. 1
T
mb
= 25 °C;
Fig. 2
V
GS
= 5 V; I
D
= 25 A; T
j
= 25 °C;
Fig. 11
[1]
Min
-
-
-
Typ
-
-
-
Max
60
120
293
Unit
V
A
W
Static characteristics
drain-source on-state
resistance
gate-drain charge
-
2.87
3.7
Dynamic characteristics
Q
GD
V
GS
= 5 V; I
D
= 25 A; V
DS
= 48 V;
Fig. 13; Fig. 14
[1]
Continuous current is limited by package.
-
31
-
nC
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