BLF6G10LS-200R
Power LDMOS transistor
Rev. 01 — 21 January 2008
Preliminary data sheet
1. Product profile
1.1 General description
200 W LDMOS power transistor for base station applications at frequencies from
800 MHz to 1000 MHz.
Table 1.
Typical performance
Typical RF performance at T
case
= 25
°
C in a class-AB production test circuit.
Mode of operation
2-carrier W-CDMA
[1]
f
(MHz)
869 to 894
V
DS
(V)
28
P
L(AV)
(W)
40
G
p
(dB)
20
η
D
(%)
27.5
ACPR
(dBc)
−40
[1]
Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7.5 dB at 0.01 % probability on CCDF per carrier; carrier
spacing 5 MHz.
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
1.2 Features
I
Typical 2-carrier W-CDMA performance at frequencies of 869 MHz and 894 MHz, a
supply voltage of 28 V and an I
Dq
of 1400 mA:
N
Average output power = 40 W
N
Power gain = 20 dB
N
Efficiency = 27.5 %
N
ACPR =
−40
dBc
I
Easy power control
I
Integrated ESD protection
I
Enhanced ruggedness
I
High efficiency
I
Excellent thermal stability
I
Designed for broadband operation (800 MHz to 1000 MHz)
I
Internally matched for ease of use
I
Compliant to Directive 2002/95/EC, regarding restriction of hazardous substances
(RoHS)
NXP Semiconductors
BLF6G10LS-200R
Power LDMOS transistor
1.3 Applications
I
RF power amplifiers for GSM, GSM EDGE, W-CDMA and CDMA base stations and
multi carrier applications in the 800 MHz to 1000 MHz frequency range.
2. Pinning information
Table 2.
Pin
1
2
3
Pinning
Description
drain
gate
source
[1]
Simplified outline
1
3
2
Symbol
1
2
3
sym112
[1]
Connected to flange.
3. Ordering information
Table 3.
Ordering information
Package
Name
BLF6G10LS-200R -
Description
earless flanged LDMOST ceramic package; 2 leads
Version
SOT502B
Type number
4. Limiting values
Table 4.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
V
DS
V
GS
I
D
T
stg
T
j
Parameter
drain-source voltage
gate-source voltage
drain current
storage temperature
junction temperature
Conditions
Min
-
−0.5
-
−65
-
Max
65
+13
49
+150
225
Unit
V
V
A
°C
°C
5. Thermal characteristics
Table 5.
Symbol
R
th(j-case)
Thermal characteristics
Parameter
thermal resistance from junction to case
Conditions
T
case
= 80
°C;
P
L
= 40 W
Typ
Unit
0.35 K/W
BLF6G10LS-200R_1
© NXP B.V. 2008. All rights reserved.
Preliminary data sheet
Rev. 01 — 21 January 2008
2 of 10
NXP Semiconductors
BLF6G10LS-200R
Power LDMOS transistor
6. Characteristics
Table 6.
Characteristics
T
j
= 25
°
C unless otherwise specified.
Symbol Parameter
V
(BR)DSS
drain-source breakdown
voltage
V
GS(th)
V
GSq
I
DSS
I
DSX
I
GSS
g
fs
R
DS(on)
C
rs
gate-source threshold voltage
gate-source quiescent voltage
drain leakage current
drain cut-off current
gate leakage current
forward transconductance
drain-source on-state
resistance
feedback capacitance
Conditions
V
GS
= 0 V; I
D
= 0.9 mA
V
DS
= 10 V; I
D
= 270 mA
V
DS
= 28 V;
I
D
= 1620 mA
V
GS
= 0 V; V
DS
= 28 V
V
GS
= V
GS(th)
+ 3.75 V;
V
DS
= 10 V
V
GS
= 11 V; V
DS
= 0 V
V
DS
= 10 V; I
D
= 9.45 A
V
GS
= V
GS(th)
+ 3.75 V;
I
D
= 9.45 A
V
GS
= 0 V; V
DS
= 28 V;
f = 1 MHz
Min
65
1.4
1.7
-
40
-
11
Typ
-
2.0
2.2
-
48
-
18
Max
-
2.4
2.7
4.2
-
420
26
Unit
V
V
V
µA
A
nA
S
0.012 0.07
-
3
0.093
Ω
-
pF
7. Application information
Table 7.
Application information
Mode of operation: 2-carrier W-CDMA; PAR 7.5 dB at 0.01 % probability on CCDF; 3GPP test
model 1; 1-64 PDPCH; f
1
= 871.5 MHz; f
2
= 876.5 MHz; f
3
= 886.5 MHz; f
4
= 891.5 MHz;
RF performance at V
DS
= 28 V; I
Dq
= 1400 mA; T
case
= 25
°
C; unless otherwise specified; in a
class-AB production test circuit.
Symbol
P
L(AV)
G
p
IRL
η
D
ACPR
Parameter
average output power
power gain
input return loss
drain efficiency
adjacent channel power ratio
P
L(AV)
= 40 W
P
L(AV)
= 40 W
P
L(AV)
= 40 W
P
L(AV)
= 40 W
Conditions
Min
-
19
-
25
-
Typ
40
20
−6.7
27.5
Max
-
21
−5.0
-
Unit
W
dB
dB
%
−40.5 −38.0
dBc
7.1 Ruggedness in class-AB operation
The BLF6G10LS-200R is an enhanced rugged device and is capable of withstanding a
load mismatch corresponding to VSWR = 10 : 1 through all phases under the following
conditions: V
DS
= 28 V; I
Dq
= 1400 mA; P
L
= 200 W; f = 894 MHz.
BLF6G10LS-200R_1
© NXP B.V. 2008. All rights reserved.
Preliminary data sheet
Rev. 01 — 21 January 2008
3 of 10
NXP Semiconductors
BLF6G10LS-200R
Power LDMOS transistor
7.2 One-tone CW
21
G
p
G
p
(dB)
19
η
D
η
D
(%)
40
001aah518
60
17
20
15
0
40
80
120
0
160
200
P
L
(W)
V
DS
= 28 V; I
Dq
= 1400 mA; f = 881 MHz.
Fig 1. One-tone CW power gain and drain efficiency as functions of load power;
typical values
7.3 Two-tone CW
21
G
p
G
p
(dB)
19
η
D
η
D
(%)
40
001aah519
60
−20
IMD
(dBc)
−30
001aah520
IMD3
−40
IMD5
17
20
−50
IMD7
15
0
120
240
P
L(PEP)
(W)
0
360
−60
0
60
120
P
L(PEP)
(W)
180
V
DS
= 28 V; I
Dq
= 1400 mA; f = 881 MHz (±100 kHz).
V
DS
= 28 V; I
Dq
= 1400 mA; f = 881 MHz (±100 kHz).
Fig 2. Two-tone CW power gain and drain efficiency
as functions of peak envelope load power;
typical values
Fig 3. Two-tone CW intermodulation distortion as
function of peak envelope load power; typical
values
BLF6G10LS-200R_1
© NXP B.V. 2008. All rights reserved.
Preliminary data sheet
Rev. 01 — 21 January 2008
4 of 10
NXP Semiconductors
BLF6G10LS-200R
Power LDMOS transistor
7.4 2-carrier W-CDMA
22
G
p
(dB)
21
001aah521
40
η
D
(%)
30
−35
IMD3,
ACPR
(dBc)
−40
IMD3
001aah522
G
p
20
20
−45
ACPR
η
D
19
10
−50
18
0
20
40
P
L(AV)
(W)
60
0
−55
0
20
40
P
L(AV)
(W)
60
V
DS
= 28 V; I
Dq
= 1400 mA; f = 881 MHz (±5 MHz);
carrier spacing 10 MHz.
V
DS
= 28 V; I
Dq
= 1400 mA; f = 881 MHz (±5 MHz);
carrier spacing 10 MHz.
Fig 4. 2-carrier W-CDMA power gain and drain
efficiency as functions of average load power;
typical values
Fig 5. 2-carrier W-CDMA adjacent channel power ratio
and third order intermodulation distortion as
functions of average load power; typical values
8. Test information
V
GG
R1
C3
C7
C8
C11
C13
C17
R3
V
DD
R2
C5
L1
input
50
Ω
C1
C16
output
50
Ω
C6
C2
C15
C9
C10
C12
C14
C18
001aah523
The drawing is not to scale.
Fig 6. Test circuit for operation at 800 MHz
BLF6G10LS-200R_1
© NXP B.V. 2008. All rights reserved.
Preliminary data sheet
Rev. 01 — 21 January 2008
5 of 10
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