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UNR92ALG0L

Description
TRANS PREBIAS NPN 125MW SSMINI3
Categorysemiconductor    Discrete semiconductor   
File Size499KB,4 Pages
ManufacturerPanasonic
Websitehttp://www.panasonic.co.jp/semicon/e-index.html
Environmental Compliance
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UNR92ALG0L Overview

TRANS PREBIAS NPN 125MW SSMINI3

UNR92ALG0L Parametric

Parameter NameAttribute value
Transistor typeNPN - Pre-biased
Current - Collector (Ic) (Maximum)80mA
Voltage - collector-emitter breakdown (maximum)50V
Resistor - Substrate (R1)4.7 kOhms
Resistor - Emitter Base (R2)4.7 kOhms
DC current gain (hFE) at different Ic, Vce (minimum value)20 @ 5mA,10V
Vce saturation value (maximum value) when different Ib,Ic250mV @ 300µA,10mA
Current - collector cutoff (maximum)500nA
Frequency - Transition150MHz
Power - Max125mW
Installation typesurface mount
Package/casingSC-89,SOT-490
Supplier device packagingSS mini 3-F3
This product complies with the RoHS Directive (EU 2002/95/EC).
Transistors with built-in Resistor
UNR92ALG
Silicon NPN epitaxial planar type
For digital circuits
Features
Optimum for high-density mounting and downsizing of the equipment
Contribute to low power consumption
Package
Code
SSMini3-F3
Name
Pin
1: Base
2: Emitter
3: Collector
Collector-base voltage (Emitter open)
Collector current
V
CBO
V
CEO
I
C
P
T
T
j
Collector-emitter voltage (Base open)
Total power dissipation
Junction temperature
Storage temperature
T
stg
–55 to +125
Collector-emitter cutoff current (Base open)
Emitter-base cutoff current (Collector open)
Forward current transfer ratio
Collector-emitter saturation voltage
Output voltage high-level
Output voltage low-level
Input resistance
Resistance ratio
Transition frequency
Note)
Ma
int
en
Collector-base cutoff current (Emitter open)
an
ce
Collector-emitter voltage (Base open)
/D
Collector-base voltage (Emitter open)
isc
on
Parameter
Symbol
V
CBO
V
CEO
I
CBO
I
CEO
I
EBO
h
FE
V
CE(sat)
V
OH
V
OL
R
1
R
1
/ R
2
f
T
tin
Electrical Characteristics
T
a
= 25°C±3°C
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50
80
V
V
M
ain
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Absolute Maximum Ratings
T
a
= 25°C
Parameter
Symbol
Rating
Unit
mA
°C
°C
125
mW
125
B
Marking Symbol: KF
Internal Connection
R
1
R
2
C
E
ue
di
Conditions
Min
50
50
Typ
Max
Unit
V
V
mA
mA
mA
V
V
V
kW
MHz
I
C
= 10
mA,
I
E
= 0
I
C
= 2 mA, I
B
= 0
V
CB
= 50 V, I
E
= 0
V
EB
= 6 V, I
C
= 0
0.1
0.5
V
CE
= 50 V, I
B
= 0
2.0
Pl
V
CE
= 10 V, I
C
= 5 mA
20
I
C
= 10 mA, I
B
= 0.3 mA
4.9
0.25
0.2
—30%
0.8
4.7
1.0
150
+30%
1.2
V
CC
= 5 V, V
B
= 0.5 V, R
L
= 1 kW
V
CC
= 5 V, V
B
= 2.5 V, R
L
= 1 kW
V
CB
= 10 V, I
E
=
—2
mA, f = 200 MHz
Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Publication date: October 2007
SJH00255AED
1

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UNR92ALG0L UNR92ALG
Description TRANS PREBIAS NPN 125MW SSMINI3 Small Signal Bipolar Transistor, 0.08A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon, ROHS COMPLIANT, SSMINI3-F3, 3 PIN

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