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3.0SMCJ45A

Description
3000 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AB
CategoryDiscrete semiconductor    diode   
File Size57KB,4 Pages
ManufacturerTaiwan Semiconductor
Websitehttp://www.taiwansemi.com/
Download Datasheet Parametric View All

3.0SMCJ45A Overview

3000 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AB

3.0SMCJ45A Parametric

Parameter NameAttribute value
MakerTaiwan Semiconductor
Reach Compliance Codecompli
ECCN codeEAR99
Base Number Matches1
3.0SMCJ SERIES
Surface Mount Transient Voltage Suppressor
Voltage Range
5.0 to 170 Volts
3000 Watts Peak Power
Features
For surface mounted application
Low profile package
Built-in strain relief
Glass passivated junction
Excellent clamping capability
Fast response time: Typically less than 1.0ps from 0 volt to
BV min.
Typical I
R
less than 1μA above 10V
High temperature soldering guaranteed:
260
O
C / 10 seconds at terminals
Plastic material used carries Underwriters Laboratory
Flammability Classification 94V-0
3000 watts peak pulse power capability with a 10 X 1000 us
waveform by 0.01% duty cycle
.129(3.27)
.118(3.0)
SMC/DO-214AB
.245(6.22)
.220(5.59)
.280(7.11)
.260(6.60)
.012(.31)
.006(.15)
.103(2.62)
.079(2.00)
Mechanical Data
Case: Molded plastic
Terminals: Solder plated
Polarity: Indicated by cathode band
Standard packaging: 16mm tape (EIA STD RS-481)
Weight: 0.21gram
.060(1.52)
.030(0.76)
.320(8.13)
.305(7.75)
.008(.20)
.004(.10)
Dimensions in inches and (millimeters)
Maximum Ratings and Electrical Characteristics
Rating at 25℃ambient temperature unless otherwise specified.
Type Number
Peak Power Dissipation at T
A
=25 C, Tp=1ms
(Note 1)
Steady State Power Dissipation
Peak Forward Surge Current, 8.3 ms Single Half
Sine-wave Superimposed on Rated Load
(JEDEC method) (Note 2, 3) - Unidirectional Only
Maximum Instantaneous Forward Voltage at
100.0A for Unidirectional Only (Note 4)
Operating and Storage Temperature Range
O
Symbol
P
PK
Pd
I
FSM
V
F
T
J
, T
STG
Value
Minimum 3000
5
200
3.5 / 5.0
-55 to + 150
O
Units
Watts
Watts
Amps
Volts
O
C
Notes: 1. Non-repetitive Current Pulse Per Fig. 3 and Derated above T
A
=25 C Per Fig. 2.
2. Mounted on 8.0mm
2
(.013mm Thick) Copper Pads to Each Terminal.
3. 8.3ms Single Half Sine-wave or Equivalent Square Wave, Duty Cycle=4 Pulses Per Minute
Maximum.
4. V
F
=3.5V on 3.0SMCJ5.0 thru 3.0SMCJ90 Devices and V
F
=5.0V on 3.0SMCJ100 thru
3.0SMCJ170 Devices.
Devices for Bipolar Applications
1. For Bidrectional Use C or CA Suffix for Types 3.0SMCJ5.0 through Types 3.0SMCJ170.
2. Electrical Characteristics Apply in Both Directions.
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