UNISONIC TECHNOLOGIES CO., LTD
2SD882S
MEDIUM POWER LOW
VOLTAGE TRANSISTOR
FEATURES
* High current output up to 3A
* Low saturation voltage
* Complement to 2SB772S
NPN SILICON TRANSISTOR
1
SOT-89
1
SOT-223
APPLICATIONS
* Audio power amplifier
* DC-DC convertor
* Voltage regulator
1
TO-92
*Pb-free plating product number: 2SD882SSL
ORDERING INFORMATION
Order Number
Normal
Lead Free Plating
2SD882S-x-AA3-R
2SD882SL-x-AA3-R
2SD882S-x-AB3-R
2SD882SL-x-AB3-R
2SD882S-x-T92-B
2SD882SL-x-T92-B
2SD882S-x-T92-K
2SD882SL-x-T92-K
Package
SOT-223
SOT-89
TO-92
TO-92
Pin Assignment
1
2
3
B
C
E
B
C
E
E
C
B
E
C
B
Packing
Tape Reel
Tape Reel
Tape Box
Bulk
2SD882SL-x-AA3-R
(1)Packing Type
(2)Package Type
(3)Rank
(4)Lead Plating
(1) B: Tape Box, K: Bulk, R: Tape Reel
(2) AA3: SOT-223, AB3: SOT-89, T92: TO-92
(3) x: refer to Classification of h
FE2
(4) L: Lead Free Plating, Blank: Pb/Sn
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Copyright © 2005 Unisonic Technologies Co., Ltd
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QW-R208-007,C
2SD882S
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Base Current
SOT-89
SOT-223
TO-92
DC
Pulse
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CP
I
B
NPN SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATING
(Ta=25
℃
, unless otherwise specified )
RATINGS
40
30
5
3
7
0.6
UNIT
V
V
V
A
A
A
0.5
W
Power Dissipation
P
D
1
W
0.5
W
Junction Temperature
T
J
+150
℃
Storage Temperature
T
STG
-55 ~ +150
℃
Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS
(Ta=25
℃
, unless otherwise specified)
PARAMETER
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain (Note 1)
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Current Gain Bandwidth Product
Output Capacitance
SYMBOL
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE1
h
FE2
V
CE(SAT)
V
BE(SAT)
f
T
Cob
TEST CONDITIONS
I
C
=100µA, I
E
=0
I
C
=1mA, I
B
=0
I
E
=100µA, I
C
=0
V
CB
=30V, I
E
=0
V
EB
=3V, I
C
=0
V
CE
=2V, I
C
=20mA
V
CE
=2V, I
C
=1A
I
C
=2A, I
B
=0.2A
I
C
=2A, I
B
=0.2A
V
CE
=5V, I
C
=0.1A
V
CB
=10V, I
E
=0, f=1MHz
MIN
40
30
5
TYP
MAX
UNIT
V
V
V
nA
nA
1000
1000
30
100
200
150
0.3
1.0
80
45
400
0.5
2.0
V
V
MHz
pF
Note 1: Pulse test: PW<300
µ
s, Duty Cycle<2%
CLASSIFICATION OF h
FE2
RANK
RANGE
Q
100-200
P
160-320
E
200-400
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QW-R208-007,C
2SD882S
TYPICAL CHARACTERISTICS
Static Characteristics
NPN SILICON TRANSISTOR
Derating Curve of Safe Operating
Areas
150
Collector Current, Ic (A)
Derating, I
C
(%)
1.6
1.2
0.8
0.4
0
0
I
B
=9mA
I
B
=8mA
I
B
=7mA
I
B
=6mA
I
B
=5mA
I
B
=4mA
I
B
=3mA
I
B
=2mA
I
B
=1mA
4
8
12
16
20
100
S/
50
bl
im
ite
d
n
io
at
ip
is s
D
lim
d
ite
0
-50
0
50
100
150
200
Collector-Emitter voltage (V)
Case Temperature, T
C
(℃)
Current Gain-Bandwidth Product
Current Gain-
Bandwidth Product, F
T
(MHz)
Safe Operating Area
10
1
Collector Current, I
C
(A)
10
3
S
1m
0.
10
m
S
1m
S
10
2
V
CE
=5V
I
B
=8mA
10
0
I
C
(max), DC
10
1
10
-1
I
C
(max), Pulse
10
-2
10
10
-2
0
10
-1
10
0
10
1
10
0
10
1
Collector-Emitter Voltage
10
2
Collector Current, Ic (A)
DC Current Gain
Saturation Voltage
Saturation Voltage (mV)
10
3
10
4
10
3
10
2
10
1
10
0 0
10
V
BE(SAT)
DC Current Gain, h
FE
10
2
V
CE
=2V
V
CE(SAT)
10
1
10
0
10
0
10
Collector Current, I
C
(mA)
10
1
3
10
4
10
1
10
2
10
3
10
4
Collector Current, I
C
(mA)
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QW-R208-007,C
2SD882S
TYPICAL CHARACTERISTICS(Cont.)
Collector Output Capacitance
Output Capacitance (pF)
NPN SILICON TRANSISTOR
10
3
I
E
=0
f=1MHz
10
2
10
1
10
0
10
0
10
-1
10
-2
10
-3
Collector-Base Voltage (V)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R208-007,C
Discrete Device
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