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DD400S33K2CNOSA1

Description
IGBT MODULE 3300V 400A
CategoryDiscrete semiconductor    diode   
File Size249KB,6 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Download Datasheet Parametric View All

DD400S33K2CNOSA1 Overview

IGBT MODULE 3300V 400A

DD400S33K2CNOSA1 Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
MakerInfineon
Objectid1299748225
Parts packaging codeMODULE
package instructionR-XUFM-X4
Contacts4
Reach Compliance Codecompliant
ECCN codeEAR99
Factory Lead Time26 weeks
compound_id153783596
applicationGENERAL PURPOSE
Shell connectionISOLATED
ConfigurationSEPARATE, 2 ELEMENTS
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)3.5 V
JESD-30 codeR-XUFM-X4
Number of components2
Phase1
Number of terminals4
Maximum operating temperature150 °C
Minimum operating temperature-40 °C
Maximum output current400 A
Package body materialUNSPECIFIED
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Maximum power dissipation800000 W
Certification statusNot Qualified
Maximum repetitive peak reverse voltage3300 V
surface mountNO
Terminal formUNSPECIFIED
Terminal locationUPPER
Maximum time at peak reflow temperatureNOT SPECIFIED
TechnischeInformation/TechnicalInformation
IGBT-Module
IGBT-modules
DD400S33K2C
Diode,Wechselrichter/Diode,Inverter
HöchstzulässigeWerte/MaximumRatedValues
PeriodischeSpitzensperrspannung
Repetitivepeakreversevoltage
Dauergleichstrom
ContinuousDCforwardcurrent
PeriodischerSpitzenstrom
Repetitivepeakforwardcurrent
Grenzlastintegral
I²t-value
Spitzenverlustleistung
Maximumpowerdissipation
Mindesteinschaltdauer
Minimumturn-ontime
T
vj
= 25°C
T
vj
= -25°C

t
P
= 1 ms
V
R
= 0 V, t
P
= 10 ms, T
vj
= 125°C
T
vj
= 125°C

V
RRM

I
F
I
FRM
I²t



3300
3300
400
800
55,5
800
10,0
min.
T
vj
= 25°C
T
vj
= 125°C
V
F
I
RM

typ.
2,80
2,80
550
650
235
440
245
515

12,0

125
max.
3,50
3,50

V
V
A
A
µC
µC
mJ
mJ

V

A

A

kA²s

kW

µs
P
RQM

t
on min

CharakteristischeWerte/CharacteristicValues
Durchlassspannung
Forwardvoltage
Rückstromspitze
Peakreverserecoverycurrent
Sperrverzögerungsladung
Recoveredcharge
AbschaltenergieproPuls
Reverserecoveryenergy
Wärmewiderstand,ChipbisGehäuse
Thermalresistance,junctiontocase
I
F
= 400 A, V
GE
= 0 V
I
F
= 400 A, V
GE
= 0 V
I
F
= 400 A, - di
F
/dt = 2200 A/µs (T
vj
=125°C) T
vj
= 25°C
V
R
= 1800 V
T
vj
= 125°C
V
GE
= -15 V
I
F
= 400 A, - di
F
/dt = 2200 A/µs (T
vj
=125°C) T
vj
= 25°C
V
R
= 1800 V
T
vj
= 125°C
V
GE
= -15 V
I
F
= 400 A, - di
F
/dt = 2200 A/µs (T
vj
=125°C) T
vj
= 25°C
V
R
= 1800 V
T
vj
= 125°C
V
GE
= -15 V
proDiode/perdiode
Q
r


E
rec
R
thJC
R
thCH
T
vj op



-40

51,0 K/kW
K/kW
°C
Wärmewiderstand,GehäusebisKühlkörper proDiode/perdiode
Thermalresistance,casetoheatsink
λ
Paste
=1W/(m·K)/λ
grease
=1W/(m·K)
TemperaturimSchaltbetrieb
Temperatureunderswitchingconditions

preparedby:SB
approvedby:DTS
dateofpublication:2013-11-25
revision:3.2
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