UNISONIC TECHNOLOGIES CO., LTD
2SD1816
NPN EPITAXIAL PLANAR TRANSISTOR
HIGH CURRENT SWITCHIG
APPLICATIONS
1
FEATURES
* Low collector-to-emitter saturation voltage
* Good linearity of h
FE
* Small and slim package facilitating compactness of sets.
* High f
T
* Fast switching speed
TO-252
1
TO-251
*Pb-free plating product number: 2SD1816L
ORDERING INFORMATION
Order Number
Normal
Lead Free Plating
2SD1816-x-TM3-F-T
2SD1816L-x-TM3-F-T
2SD1816-x-TN3-F-K
2SD1816L-x-TN3-F-K
2SD1816-x-TN3-F-R
2SD1816L-x-TN3-F-R
Note: x: Rank, refer to Classification of h
FE1
.
2SD1816L-x-TM3-F-T
(1)Packing Type
(2)Pin Assignment
(3)Package Type
(4)Rank
(5)Lead Plating
(1) K: Bulk, T: Tube, R: Tape Reel
(2) refer to Pin Assignment
(3) TM3: TO-251, TN3: TO-252
(4) x: refer to Classification of h
FE1
(5) L: Lead Free Plating, Blank: Pb/Sn
Package
TO-251
TO-252
TO-252
Pin Assignment
1
2
3
B
C
E
B
C
E
B
C
E
Packing
Tube
Bulk
Tape Reel
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Copyright © 2005 Unisonic Technologies Co., Ltd
1 of 4
QW-R209-011,B
2SD1816
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
NPN EPITAXIAL PLANAR TRANSISTOR
ABSOLUTE MAXIMUM RATINGS
(Ta =25℃ )
SYMBOL
V
CBO
V
CEO
V
EBO
DC
PULSE(Note 1)
I
C
P
D
RATINGS
120
100
6
4
8
1
(T
C
=25°C) 20 (Note 2)
+150
-40 ~ +150
UNIT
V
V
V
A
A
W
W
°C
°C
Junction Temperature
T
J
Storage Temperature
T
STG
Note1: Duty=1/2, Pw=20ms
Note2: When mounted on a 40×40×0.7mm ceramic board
Note3: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS
(Ta=25°C, unless otherwise specified)
PARAMETER
Collector Base Breakdown Voltage
Collector Emitter Breakdown Voltage
Emitter Base Breakdown Voltage
Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
DC Current Transfer Ratio
Transition Frequency
Output Capacitance
Turn-on Time
Storage Time
Fall Time
SYMBOL
BV
CBO
BV
CEO
BV
EBO
V
BE(SAT)
V
CE(SAT)
I
CBO
I
EBO
h
FE1
h
FE2
f
T
C
ob
t
ON
t
STG
t
F
TEST CONDITIONS
I
C
=10µA, I
E
=0
I
C
=1mA, R
B
=∞
I
E
=10µA, I
C
=0
I
C
= 2A, I
B
=0.2A
I
C
= 2A, I
B
=0.2A
V
CB
= 100 V, I
E
=0
V
EB
= 4V, I
C
=0
V
CE
= 5V, I
C
= 0.5A
V
CE
=5V, I
C
= 3A
V
CE
=10V, I
C
=0.5A
V
CB
=10V, I
E
=0A, f =1MHz
See test circuit
See test circuit
See test circuit
MIN
120
100
6
TYP
MAX UNIT
V
V
V
1.2
V
400
mV
1
µA
1
µA
400
MHz
pF
ns
ns
ns
0.9
150
70
40
180
40
100
900
50
CLASSIFICATION of h
FE1
RANK
RANGE
R
100 - 200
S
140 - 280
T
200 - 400
Q
70 -140
TEST CIRCUIT
PW=20μS
Duty Cycle≒1%
INPUT
I
B1
R
B
I
B2
50
V
R
+
100µ
-5V
Ic=10, I
B1
= -10, I
B2
=2A
Unit (resistance:Ω, capacitance: F)
+
470
µ
50V
OUTPUT
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QW-R209-011,B
2SD1816
TYPICAL CHARACTERISTICS
Ic -V
CE
5
Colletcor Current, Ic (A)
4
3
2
1
0
100mA
mA
80mA 90
70mA
60mA
NPN EPITAXIAL PLANAR TRANSISTOR
Ic -V
CE
2.0
1.6
1.2
0.8
0.4
0
4
5
0
10
20
8mA
7mA
6mA
5mA
4mA
A
50m A
40m A
30m
A
20m
10mA
ColletcorCurrent, Ic (A)
3mA
2mA
1mA
I
B
=0
30
40
50
Collector to Emitter Voltage,V
CE
(V)
5mA
2mA
I
B
=0
0
1
2
3
Collector to Emitter Voltage,V
CE
(V)
Ic -V
BE
5
Colletcor Current, Ic(A)
h
FE
- Ic
V
CE
=5V
DC Current Gain, h
FE
1000
7
5
3
2
V
CE
=5V
Ta=75℃
25℃ -25℃
4
3
2
1
0
0
0.2
0.4
0.6
0.8
Ta=75℃
25℃
-25℃
1.0
1.2
100
7
5
3
2
10
7
5
5
0.01
2
3
5
0.1
2
3
5
1.0
2 3
5
10
Base to Emitter Voltage , V
BE
(V)
Collector Current,I
C
(A)
f
T
-I c
5
Cob - V
CB
V
CE
=10V
3
Gain-Bandwidth Product, f
T
(MHz)
2
Output Capacitance, Cob (pF)
3
2
f=1MHZ
100
7
5
3
2
100
7
5
3
2
7
5
10
2
3
5 7
0.1
2
3
5
7
1.0
2
3
5
5 7
1.0
2
3
5
7
10
2
3
5
7
100
2
Colletcor Current Ic (A)
,
Colletcor to Base Voltage, V
CB
(V)
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QW-R209-011,B
2SD1816
TYPICAL CHARACTERISTICS(Cont.)
V
CE (SAT)
- Ic
5
NPN EPITAXIAL PLANAR TRANSISTOR
V
CE( AT)
- Ic
S
10
Base to Emitter
Saturation Voltage, V
BE(SAT)
(V)
7
5
3
2
Collector to Emitter
Saturation Voltage, V
CE(SAT)
(mV)
3
2
I
C
/I
B
=10
I
C
/I
B
=10
1000
7
5
3
2
100
7
5
3
2
1.0
7
5
3
2
℃
Ta =-25
25
℃
75
℃
Ta=75
℃
℃
25
℃
-25
5
0.01
2
3
5
0.1
2
3
5
1.0
2
3
5
10
5
0.01
2
3
,
Collector Current I
C
(A)
1.
2 3
0
Collector Current I
C
(A)
,
5
0.1
2
3
5
5
10
ASO
10
5
3
P
D
-Ta
1ms
25
Icp
Ic
DC
D
Collector Dissipation, P
D
(W)
CollectorCurrent, I
C
(A)
2
1.0
5
3
2
(T Op
a=
25 e rat
℃
ion
)
10ms
100ms
20
15
10
5
1
0
No heat sink
0
20
40
60
80 100 120 140 160
C
O
io n
ra t
pe
c=
(T
0.1
5
3
2
℃
25
)
0.01
5
2
Tc=25℃
one pulse
3
5
1.0
2
3
5
10
2
3
5
100
2
Colletcor to Emitter Voltage,V
CE
(V)
Ambient Temperature, , Ta
(℃)
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
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QW-R209-011,B
Embedded System
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