HS2A - HS2M
Taiwan Semiconductor
2A, 50V - 1000V High Efficient Surface Mount Rectifier
FEATURES
●
●
●
●
●
Low power loss, high efficiency
Ideal for automated placement
Glass passivated junction chip
Fast switching for high efficiency
Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
● Halogen-free according to IEC 61249-2-21
KEY PARAMETERS
PARAMETER
I
F(AV)
V
RRM
I
FSM
T
J MAX
Package
Configuration
VALUE
2
50 - 1000
50
150
Single Die
UNIT
A
V
A
°C
DO-214AA (SMB)
APPLICATIONS
●
●
●
●
Switching mode power supply (SMPS)
Adapters
Lighting application
Converter
MECHANICAL DATA
● Case: DO-214AA (SMB)
● Molding compound meets UL 94V-0 flammability rating
● Packing code with suffix "G" means green compound
(halogen-free)
● Part no. with suffix “H” means AEC-Q101 qualified
● Terminal: Matte tin plated leads, solderable per J-STD-002
● Meet JESD 201 class 2 whisker test
● Polarity: As marked
● Weight: 0.09 g (approximately)
DO-214AA (SMB)
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25°C unless otherwise noted)
PARAMETER
Marking code on the device
Repetitive peak reverse voltage
Reverse voltage, total rms value
Maximum DC blocking voltage
Forward current
Surge peak forward current, 8.3
ms single half sine-wave
superimposed on rated load per
diode
Junction temperature
Storage temperature
SYMBOL HS2A HS2B HS2D HS2F HS2G HS2J HS2K
HS2A HS2B HS2D HS2F HS2G HS2J HS2K
V
RRM
50
100
200
300
400
600
800
V
R(RMS)
35
70
140
210
280
420
560
V
DC
50
100
200
300
400
600
800
I
F(AV)
2
I
FSM
T
J
T
STG
50
- 55 to +150
- 55 to +150
HS2M UNIT
HS2M
1000
V
700
V
1000
V
A
A
°C
°C
1
Version:K1701
HS2A - HS2M
Taiwan Semiconductor
THERMAL PERFORMANCE
PARAMETER
Junction to Ambient Thermal Resistance
SYMBOL
R
ӨJA
LIMIT
80
UNIT
°C/W
ELECTRICAL SPECIFICATIONS
(T
A
= 25°C unless otherwise noted)
PARAMETER
HS2A
HS2B
HS2D
Forward voltage per diode
(1)
CONDITIONS
SYMBOL
TYP
-
-
-
-
MAX
UNIT
V
V
V
V
V
V
V
V
µA
µA
pF
pF
pF
pF
pF
pF
pF
pF
ns
ns
1.0
HS2F
HS2G
HS2J
HS2K
HS2M
T
J
= 25°C
T
J
= 125°C
I
F
= 2A,T
J
= 25°C
V
F
-
-
-
-
-
-
1.3
1.7
5
150
-
-
Reverse current @ rated V
R
per diode
(2)
I
R
HS2A
HS2B
HS2D
Junction capacitance
HS2F
HS2G
HS2J
HS2K
HS2M
HS2A
HS2B
HS2D
Reverse recovery time
HS2F
HS2G
HS2J
HS2K
HS2M
Notes:
1. Pulse test with PW=0.3 ms
2. Pulse test with PW=30 ms
I
F
=0.5A ,I
R
=1.0A
I
RR
=0.25A
t
rr
-
-
-
-
-
-
-
-
30
1 MHz, V
R
=4.0V
C
J
50
-
-
-
-
-
-
50
ns
ns
ns
ns
75
ns
ns
2
Version:K1701
HS2A - HS2M
Taiwan Semiconductor
CHARACTERISTICS CURVES
(T
A
= 25°C unless otherwise noted)
Fig1. Forward Current Derating Curve
Fig2. Typical Junction Capacitance
3
AVERAGE FORWARD CURRENT (A)
175
150
CAPACITANCE (pF)
125
100
75
50
25
0
HS2J-HS2M
0.1
1
10
100
1000
HS2A-HS2G
f=1.0MHz
Vsig=50mVp-p
2.5
2
1.5
1
0.5
0
0
25
50
75
100
125
150
LEAD TEMPERATURE (
°
C)
REVERSE VOLTAGE (V)
Fig3. Typical Reverse Characteristics
INSTANTANEOUS REVERSE CURRENT (μA)
INSTANTANEOUS FORWARD CURRENT (A)
1000
10
10
Fig4. Typical Forward Characteristics
100
T
J
=100°C
1
UF1DLW
HS2A-HS2D
T
J
=125°C
T
J
=25°C
1
HS2G
0.01
HS2J-HS2M
0.3
0
0.4
0.2
0.5
0.4
0.6
0.6
0.7
0.8
0.8
1
Pulse width
0.9
1.2
1
1.1
1.4
1.2
0.001
0.1
0.1
0
20
40
60
80
100
120
140
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
FORWARD VOLTAGE (V)
4
Version:K1701
(A)
10
1
0.1
T
J
=25°C
HS2A - HS2M
Taiwan Semiconductor
Fig5. Maximum Non-repetitive Forward Surge Current
70
PEAK FORWARD SURGE URRENT(A)
60
50
40
30
20
10
0
1
8.3ms Single Half Sine Wave
10
100
NUMBER OF CYCLES AT 60 Hz
Fig6. Reverse Recovery Time Characteristic And Test Circuit Diagram
5
Version:K1701
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