2SC2389S datasheet, PDF - EEWORLD Datasheet

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2SC2389S: DescriptionHigh-voltage Amplifier Transistor(120V, 50mA); CategoryDiscrete semiconductor The transistor; File Size54KB，1 Pages; ManufacturerROHM Semiconductor; Websitehttps://www.rohm.com/; Environmental Compliance

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2SC2389S Overview

High-voltage Amplifier Transistor(120V, 50mA)

2SC2389S Parametric

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
package instruction	IN-LINE, R-PSIP-T3
Reach Compliance Code	compli
Maximum collector current (IC)	0.05 A
Collector-emitter maximum voltage	120 V
Configuration	SINGLE
Minimum DC current gain (hFE)	270
JESD-30 code	R-PSIP-T3
JESD-609 code	e1
Number of components	1
Number of terminals	3
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	IN-LINE
Peak Reflow Temperature (Celsius)	260
Polarity/channel type	NPN
Maximum power dissipation(Abs)	0.3 W
Certification status	Not Qualified
surface mount	NO
Terminal surface	TIN SILVER COPPER
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
Maximum time at peak reflow temperature	10
transistor applications	AMPLIFIER
Transistor component materials	SILICON
Nominal transition frequency (fT)	140 MHz
Base Number Matches	1

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2SC4102 / 2SC3906K / 2SC2389S

Transistors

High-voltage Amplifier Transistor

(120V, 50mA)

2SC4102 / 2SC3906K / 2SC2389S

!

Features

1) High breakdown voltage. (BV

CEO

= 120V)

2) Complements the 2SA1579 / 2SA1514K / 2SA1038S.

!

External dimensions

(Units : mm)

2SC4102

(1)

0.65 0.65

0.7

0.8

0.3

(3)

1.25

0.2

!

Absolute maximum ratings

(Ta=25°C)

0.15

2.1

Parameter

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

Collector power

2SC4102 / 2SC3906K

dissipation

2SC2389S

Junction temperature

Storage temperature

Symbol

V

CBO

V

CEO

V

EBO

I

C

P

C

Tj

Tstg

Limits

120

5

50

0.2

0.3

150

−55~+150

Unit

V

mA

W

(2)

0.1Min.

0~0.1

Each lead has same dimensions

°C

ROHM : UMT3

EIAJ : SC-70

JEDEC : SOT-323

2SC3906K

(1)

0.4

Type

Package

h

FE

Marking

Code

Basic ordering unit (pieces)

2SC4102

UMT3

RS

T

∗

T106

3000

2SC3906K

SMT3

RS

T

∗

T146

3000

2SC2389S

SPT

RS

−

TP

5000

(3)

1.6

2.8

0.15

(2)

!

Packaging specifications and h

FE

∗

Denotes h

0.3Min.

FE

0~0.1

Each lead has same dimensions

ROHM : SMT3

EIAJ : SC-59

JEDEC : SOT-346

(1) Emitter

(2) Base

(3) Collector

2SC2389S

3

4

2

(15Min.)

3Min.

0.45

2.5

5

(1) (2) (3)

0.5 0.45

Taping specifications

ROHM : SPT

EIAJ : SC-72

(1) Emitter

(2) Collector

(3) Base

!

Electrical characteristics

(Ta=25°C)

Parameter

Symbol

BV

CBO

BV

CEO

BV

EBO

I

CBO

I

EBO

V

CE(sat)

h

FE

f

T

Cob

Min.

120

5

−

180

−

Typ.

−

140

2.5

Max.

−

0.5

560

−

Unit

V

µA

V

−

MHz

pF

I

C

=50µA

I

C

=1mA

I

E

=50µA

V

CB

=100V

V

EB

=4V

I

C

/I

B

=10mA/1mA

V

CE

=6V,

I

C

=2mA

V

CE

=12V,

I

E

=−2mA,

f=100MHz

V

CB

=12V,

I

E

=0A,

f=1MHz

Conditions

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cutoff current

Emitter cutoff current

Collector-emitter saturation voltage

DC current transfer ratio

Transition frequency

Output capacitance

1.1

0.95 0.95

1.9

2.9

0.9

1.3

(1) Emitter

(2) Base

(3) Collector

2.0

2SC2389S Related Products

	2SC2389S	2SC4102	2SC3906K
Description	High-voltage Amplifier Transistor(120V, 50mA)	High-voltage Amplifier Transistor(120V, 50mA)	High-voltage Amplifier Transistor(120V, 50mA)
Is it lead-free?	Lead free	Lead free	Lead free
Is it Rohs certified?	conform to	conform to	conform to
package instruction	IN-LINE, R-PSIP-T3	SMALL OUTLINE, R-PDSO-G3	SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code	compli	compli	compli
Maximum collector current (IC)	0.05 A	0.05 A	0.05 A
Collector-emitter maximum voltage	120 V	120 V	120 V
Configuration	SINGLE	SINGLE	SINGLE
Minimum DC current gain (hFE)	270	180	180
JESD-30 code	R-PSIP-T3	R-PDSO-G3	R-PDSO-G3
JESD-609 code	e1	e1	e1
Number of components	1	1	1
Number of terminals	3	3	3
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	IN-LINE	SMALL OUTLINE	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	260	260	260
Polarity/channel type	NPN	NPN	NPN
Maximum power dissipation(Abs)	0.3 W	0.2 W	0.2 W
Certification status	Not Qualified	Not Qualified	Not Qualified
surface mount	NO	YES	YES
Terminal surface	TIN SILVER COPPER	Tin/Silver/Copper (Sn/Ag/Cu)	Tin/Silver/Copper (Sn/Ag/Cu)
Terminal form	THROUGH-HOLE	GULL WING	GULL WING
Terminal location	SINGLE	DUAL	DUAL
Maximum time at peak reflow temperature	10	10	10
transistor applications	AMPLIFIER	AMPLIFIER	AMPLIFIER
Transistor component materials	SILICON	SILICON	SILICON
Base Number Matches	1	1	1
Nominal transition frequency (fT)	140 MHz	-	140 MHz
ECCN code	-	EAR99	EAR99

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