UNISONIC TECHNOLOGIES CO., LTD
2SC1815
NPN EPITAXIAL SILICON TRANSISTOR
AUDIO FREQUENCY
AMPLIFIER HIGH FREQUENCY
OSC NPN TRANSISTOR
FEATURES
* Collector-Emitter voltage:
BV
CEO
=50V
* Collector current up to 150mA
* High h
FE
linearity
* Complimentary to UTC 2SA1015
1
TO-92
*Pb-free plating product number: 2SC1815L
ORDERING INFORMATION
Order Number
Normal
Lead Free Plating
2SC1815-x-T92-A-B
2SC1815L-x-T92-A-B
2SC1815-x-T92-A-K
2SC1815L-x-T92-A-K
Package
TO-92
TO-92
Pin Assignment
1
2
3
E
C
B
E
C
B
Packing
Tape Box
Bulk
2SC1815L-x-T92-A-B
(1)Packing Type
(2)Pin Assignment
(3)Package Type
(4)Rank
(5)Lead Plating
(1)
(2)
(3)
(4)
(5)
B: Tape Box, K: Bulk
refer to Pin Assignment
T92: TO-92
x: refer to Classification of h
FE1
L: Lead Free Plating, Blank: Pb/Sn
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Copyright © 2005 Unisonic Technologies Co., Ltd
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PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector dissipation(Ta=25℃)
NPN EPITAXIAL SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATING
(Ta=25℃,unless otherwise specified )
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
RATINGS
60
50
5
150
50
400
UNIT
V
V
V
mA
mA
mW
℃
℃
Junction Temperature
T
J
+125
Storage Temperature
T
STG
-55 ~ +125
Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS
(Ta=25℃, unless otherwise specified)
PARAMETER
Collector Cut-off Current
Emitter Cut-off Current
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
DC Current Gain(note)
Current Gain Bandwidth Product
Output Capacitance
Noise Figure
SYMBOL
I
CBO
I
EBO
V
CE(SAT)
V
BE(SAT)
h
FE1
h
FE2
f
T
C
ob
NF
TEST CONDITIONS
V
CB
=60V, I
E
=0
V
EB
=5V, I
C
=0
I
C
=100mA, I
B
=10mA
I
C
=100mA, I
B
=10mA
V
CE
=6V, I
C
=2mA
V
CE
=6V, I
C
=150mA
V
CE
=10V, I
C
=50mA
V
CB
=10V, I
E
=0, f=1MHz
I
C
=-0.1mA, V
CE
=6V
R
G
=10kΩ, f=100Hz
MIN
TYP
MAX
100
100
0.25
1.0
700
UNIT
nA
nA
V
V
0.1
120
25
80
2.0
1.0
3.0
1.0
MHz
pF
dB
CLASSIFICATION OF h
FE1
RANK
RANGE
Y
120-240
GR
200-400
BL
350-700
UNISONIC TECHNOLOGIES CO., LTD
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TYPICAL CHARACTERISTICS
Fig.1 Static characteristics
100
NPN EPITAXIAL SILICON TRANSISTOR
Fig.2 DC current Gain
10
3
V
CE
=6V
Collector Current, I
C
(mA)
DC Current Gain, h
FE
20
80
60
40
20
0
I
B
=300µA
I
B
=250µA
I
B
=200µA
I
B
=150µA
I
B
=100µA
I
B
=50µA
0
4
8
12
16
Collector-Emitter Voltage (V)
10
2
10
1
10
0
10
-1
10
0
10
1
10
2
10
3
Collector Current, I
C
(mA)
Fig.4 Saturation Voltage
Fig.3 Base-Emitter on Voltage
10
2
10
4
Collector Current, I
C
(mA)
V
CE
=6V
10
1
Saturation Voltage (mV)
I
C
=10*I
B
V
BE(SAT )
10
3
10
0
10
2
V
CE(SAT)
10
-1
0
0.2
0.4
0.6
0.8
Base-Emitter Voltage (V)
1.0
10
1 -1
10
10
0
10
1
10
2
10
3
Collector Current, I
C
(mA)
Fig.5 Current Gain-Bandwidth
Product
10
3
Fig.6 Collector Output Capacitance
10
2
Current Gain-Bandwidth Product,
f
T
(MHz)
Capacitance, C
ob
(pF)
10
2
V
CE
=6V
10
1
f=1MHz
I
E
=0
10
1
10
0
10
0
10
-1
10
0
10
1
10
2
10
-1
10
0
10
1
10
2
10
3
Collector Current, I
C
(mA)
Collector-Base Voltage (V)
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www.unisonic.com.tw
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NPN EPITAXIAL SILICON TRANSISTOR
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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