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DBLS208G C1G

Description
BRIDGE RECT 1PHASE 1.2KV 2A DBLS
Categorysemiconductor    Discrete semiconductor   
File Size195KB,4 Pages
ManufacturerTaiwan Semiconductor
Websitehttp://www.taiwansemi.com/
Environmental Compliance
Download Datasheet Parametric View All

DBLS208G C1G Overview

BRIDGE RECT 1PHASE 1.2KV 2A DBLS

DBLS208G C1G Parametric

Parameter NameAttribute value
Diode typeSimplex
technologystandard
Voltage - Peak Reverse (Maximum)1.2kV
Current - average rectification (Io)2A
Voltage at different If - Forward (Vf1.3V @ 2A
Current at different Vr - Reverse leakage current2µA @ 1200V
Operating temperature-55°C ~ 150°C(TJ)
Installation typesurface mount
Package/casing4-SMD, gull wing
Supplier device packagingDBLS
DBLS201G - DBLS209G
Taiwan Semiconductor
CREAT BY ART
2A, 50V - 1400V Glass Passivated Bridge Rectifiers
FEATURES
- Ideal for automated placement
- Reliable low cost construction utilizing molded plastic technique
- High surge current capability
- UL Recognized File # E-326854
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21
DBLS
MECHANICAL DATA
Case:
Molded plastic body
Molding compound, UL flammability classification rating 94V-0
Moisture sensitivity level: level 1, per J-STD-020
Part no. with suffix "H" means AEC-Q101 qualified
Packing code with suffix "G" means green compound (halogen-free)
Terminal:
Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 2 whisker test
Polarity:
Polarity as marked on the body
Weight:
0.36 g (approximately)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(T
A
=25°C unless otherwise noted)
PARAMETER
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load
Rating for fusing (t<8.3ms)
Maximum instantaneous forward voltage (Note 1)
I
F
= 2 A
Maximum reverse current @ rated V
R
Typical thermal resistance
Operating junction temperature range
Storage temperature range
Note 1: Pulse Test with PW=300μs,1% Duty Cycle
T
J
=25°C
T
J
=125°C
SYMBOL
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
I
2
t
V
F
I
R
R
θJL
R
θJA
T
J
T
STG
1.15
2
500
15
40
- 55 to +150
- 55 to +150
DBLS DBLS DBLS DBLS DBLS DBLS DBLS DBLS DBLS
201G 202G 203G 204G 205G 206G 207G 208G 209G
50
35
50
100
70
100
200
140
200
400
280
400
600
420
600
2
50
10.3
1.30
800
560
800
1000
700
1000
1200
840
1200
1400
980
1400
UNIT
V
V
V
A
A
A
2
s
V
μA
°C/W
°C
°C
Document Number: DS_D1310039
Version: I15
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