UNISONIC TECHNOLOGIES CO., LTD
2SB1386
LOW FREQUENCY PNP
TRANSISTOR
1
PNP SILICON TRANSISTOR
FEATURES
* Excellent DC current gain characteristics
* Low V
CE(SAT)
V
CE(SAT)
= -0.35V (Typ)
(I
C
/I
B
= -4A/-0.1A)
SOT-89
*Pb-free plating product number: 2SB1386L
ORDERING INFORMATION
Order Number
Normal
Lead Free Plating
2SB1386-x-AB3-F-R
2SB1386L-x-AB3-F-R
Package
SOT-89
Pin Assignment
1
2
3
B
C
E
Packing
Tube
www.unisonic.com.tw
Copyright © 2005 Unisonic Technologies Co., Ltd
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QW-R208-019,B
2SB1386
PARAMETER
SYMBOL
V
CBO
V
CEO
V
EBO
I
C(DC)
I
C(PULSE)
P
C
T
J
T
STG
PNP SILICON TRANSISTOR
RATINGS
-30
-20
-6
-5
-10
0.5
150
-55 ~ +150
UNIT
V
V
V
A
A
W
℃
℃
ABSOLUTE MAXIMUM RATINGS
( Ta=25°C ,unless otherwise specified )
Collector-Base Voltage
Collector-Emitter Voltage
Collector-Emitter Voltage
Collector Current (DC)
Collector Current (Pulse)(Note1)
Collector Power Dissipation
Junction Temperature
Storage Temperature
Note 1. Single pulse, Pw=10ms
2. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS
(Ta=25°C, unless otherwise specified)
PARAMETER
Collector Base Breakdown Voltage
Collector Emitter Breakdown Voltage
Emitter Base Breakdown Voltage
Collector-Emitter Saturation Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Transition Frequency
Output Capacitance
SYMBOL
BV
CBO
BV
CEO
BV
EBO
V
CE(SAT)
I
CBO
I
EBO
h
FE
f
T
Cob
TEST CONDITIONS
I
C
= -50μA
I
C
= -1mA
I
E
= -50μA
I
C
/I
B
= -4A/-0.1A
V
CB
= -20V
V
EB
= -5V
V
CE
= -2V, I
C
= -0.5A
V
CE
= -6V, I
E
= 50mA, f=30MHz
V
CB
= -20V, I
E
= 0A, f=1MHz
MIN
-30
-20
-6
TYP
MAX
UNIT
V
V
V
V
μA
μA
MHz
pF
82
120
60
-1.0
-0.5
-0.5
390
CLASSIFICATION OF h
FE
RANK
RANGE
P
82-180
Q
120-270
R
180-390
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R208-019,B
2SB1386
TYPICAL CHARACTERISTICS
PNP SILICON TRANSISTOR
-10
-5 V
CE
= -2V
-2
-1
-500m
-200m
-100m
-50m
-20m
-10m
-5m
-2m
-1m
0
Collector Current vs. Base to Emitter
Voltage
-5
-4
Collector Current vs. Collector to Emitter
Voltage
-50mA
-45mA
-30mA Ta=25℃
-25mA
-20mA
-15mA
Ta=100℃
Ta=25℃
Ta= -25℃
-3
-10mA
-2
-35mA
-40mA
-5mA
-1
0
0
I
B
=0mA
-0.4
-0.8
-1.2
-1.6
-2.0
Collector to Emitter Voltage, V
CE
(V)
-0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4
Base to Emitter Voltage, V
BE
(V)
DC Current Gain vs. Collector Current(1)
5k
2k
1k
500
200
100
50
20
10
5
-1m-2m-5m
-0.01-0.02-0.05 -0.1-0.2
-0.5 -1 -2 -5 -10
Collector Current, Ic(A)
Vc
E
= -5V
Vc
E
= -2V
Vc
E
= -1V
Ta=25℃
DC Current Gain vs. Collector Current(2)
5k
2k
1k
500
200
100
50
20
10
5
-1m-2m-5m
-0.01-0.02-0.05 -0.1-0.2
-0.5-1 -2 -5 -10
Collector Current, I
C
(A)
Ta=100℃
Vc
E
= -1V
Ta=25℃
Ta= -25℃
DC Current Gain vs. Collector Current
5k
Vc
E
= -2V
2k
1k
500
200
100
50
20
10
5
-1m-2m-5m
-0.01-0.02-0.05 -0.1-0.2
-0.5 -1 -2 -5 -10
Collector Current, Ic(A)
Ta=100℃
-0.5
Ta= -25℃
-0.2
Ta=25℃
-0.1
-0.05
-5
-2
-1
Collector-Emitter Saturation Voltage vs.
Collector Current (1)
Ta=25℃
Ic/I
B
=50/1
40/1
30/1
10/1
-0.02
-0.01
-0.2
-2m -5m
-0.01-0.02-0.05 -0.1
-0.5-1 -2 -5 -10
Collector Current, Ic(A)
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2SB1386
TYPICAL CHARACTERICS(Cont.)
PNP SILICON TRANSISTOR
Ic/I
B
=10
-2
-1
-0.5
-0.2
-0.1
-0.05
Ta=25℃
-0.02
-0.01
-2m -5m
Ta= -25℃
-0.2
-0.01-0.02-0.05 -0.1
-0.5 -1
Collector Saturation Voltage, V
CE(SAT)
( V)
Collector Saturation Voltage, V
CE(SAT)
(V)
-5
Collector-Emitter Saturation Voltage vs.
Collector Current (2)
-5
-2
-1
-0.5
-0.2
-0.1
-0.05
Collector-Emitter Saturation Voltage vs.
Collector Current (3)
Ic/I
B
=30
Ta=100℃
Ta=25℃
Ta=100℃
Ta= -25℃
-0.02
-0.01
-2m
-2 -5 -10
Collector Current, Ic(A)
Collector-Emitter Saturation Voltage vs.
Collector Current (IV)
Ic/I
B
=40
Ta= -25℃
Ta=25℃
Collector Saturation Voltage, V
CE(SAT)
(V)
-0.2
-5m
-0.01-0.02-0.05 -0.1
-0.5-1 -2 -5 -10
Collector Current, Ic(A)
Collector Saturation Voltage, V
CE(SAT)
( V)
-5
-2
-1
-0.5
-0.2
-0.1
-0.05
-5
-2
-1
-0.5
-0.2
-0.1
-0.05
Collector-Emitter Saturation Voltage vs.
Collector Current (V)
Ic/I
B
=50
Ta= -25℃
Ta=25℃
Ta=100℃
Ta=100℃
-0.02
-0.01
-2m -5m
-0.2
-0.01-0.02-0.05 -0.1
-0.5 -1
-2 -5 -10
-0.02
-0.01
-2m
Collector Current, Ic(A)
-0.2
-5m
-0.01-0.02-0.05 -0.1
-0.5-1 -2 -5 -10
Collector Current, Ic(A)
Collector Output Capacitance, Cob (pF)
Transetion Frequency vs. Emitter Current
1000
500
Transetion Frequency, f
T
(MHz)
200
100
50
20
10
5
2
1
1
Ta=25℃
Vc
E
= -6V
1000
500
200
100
50
20
Collector Output Capacitance vs.
Collector-Base Voltage
Ta=25℃
f =1MHz
I
E
=0A
2
5 10 20 50 100200 500 1000
Emitter Current, I
E
(mA)
10
-5 -10 -20
-0.1 -0.2 -0.5 -1 -2
Collector to Base Voltage, V
CB
(V)
-50
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4 of 5
QW-R208-019,B
2SB1386
TYPICAL CHARACTERICS(Cont.)
PNP SILICON TRANSISTOR
1000
Emitter Input Capacitance, Cib (pF)
500
Emitter Input Capacitance vs. Emitter-
Base Voltage
I
c
=0A
200
100
50
Ta=25℃
f=1MHz
-0.2
-0.5 -1
-2
-5 -10
Emitter To Base Voltage, V
EB
(V)
20
-0.1
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
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QW-R208-019,B
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