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31DF4 R0G

Description
DIODE GEN PURP 400V 3A DO201AD
Categorysemiconductor    Discrete semiconductor   
File Size356KB,4 Pages
ManufacturerTaiwan Semiconductor
Websitehttp://www.taiwansemi.com/
Environmental Compliance
Download Datasheet Parametric Compare View All

31DF4 R0G Overview

DIODE GEN PURP 400V 3A DO201AD

31DF4 R0G Parametric

Parameter NameAttribute value
Diode typestandard
Voltage - DC Reverse (Vr) (Maximum)400V
Current - average rectification (Io)3A
Voltage at different If - Forward (Vf1.7V @ 3A
speedFast recovery = < 500 ns, > 200mA (Io)
Reverse recovery time (trr)35ns
Current at different Vr - Reverse leakage current20µA @ 400V
Capacitance at different Vr, F-
Installation typeThrough hole
Package/casingDO-201AD, axial
Supplier device packagingDO-201AD
Operating Temperature - Junction-40°C ~ 150°C
31DF4 - 31DF6
Taiwan Semiconductor
CREAT BY ART
3A, 400V - 600V Super Fast Rectifiers
FEATURES
- High efficiency, Low VF
- High current capability
- High surge current capability
- Low power loss
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21
MECHANICAL DATA
Case:
DO-204AC (DO-15)
Molding compound, UL flammability classification rating 94V-0
Packing code with suffix "G" means green compound (halogen-free)
Terminal:
Pure tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 1A whisker test
Weight:
1.2g (approximately)
DO-201AD
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(T
A
=25°C unless otherwise noted)
PARAMETER
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load
Maximum instantaneous forward voltage (Note 1)
@3A
Maximum reverse current @ rated V
R
Maximum reverse recovery time (Note 2)
Typical thermal resistance
Operating junction temperature range
Storage temperature range
Note 1: Pulse test with PW=300
μs,
1% duty cycle
Note 2: Reverse Recovery Test Conditions: I
F
=0.5A, I
R
=1.0A, I
RR
=0.25A
T
J
=25°C
T
J
=125°C
SYMBOL
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
V
F
I
R
t
rr
R
θJA
T
J
T
STG
31DF4
400
280
400
3
45
1.7
20
100
35
80
- 40 to +150
- 40 to +150
31DF6
600
420
600
UNIT
V
V
V
A
A
V
μA
ns
°C/W
°C
°C
Document Number: DS_D0000133
Version: F15

31DF4 R0G Related Products

31DF4 R0G 31DF6A0G 31DF6B0G 31DF4 A0G 31DF6 A0G 31DF4 B0G 31DF6 B0G
Description DIODE GEN PURP 400V 3A DO201AD Rectifier Diode, 1 Phase, 1 Element, 3A, 600V V(RRM), Silicon, DO-201AD, DO-15, 2 PIN Rectifier Diode, 1 Phase, 1 Element, 3A, 600V V(RRM), Silicon, DO-201AD, DO-15, 2 PIN DIODE GEN PURP 400V 3A DO201AD DIODE GEN PURP 600V 3A DO201AD DIODE GEN PURP 400V 3A DO201AD DIODE GEN PURP 600V 3A DO201AD
Diode type standard RECTIFIER DIODE RECTIFIER DIODE standard standard standard standard
Voltage - DC Reverse (Vr) (Maximum) 400V - - 400V 600V 400V 600V
Current - average rectification (Io) 3A - - 3A 3A 3A 3A
Voltage at different If - Forward (Vf 1.7V @ 3A - - 1.7V @ 3A 1.7V @ 3A 1.7V @ 3A 1.7V @ 3A
speed Fast recovery = < 500 ns, > 200mA (Io) - - Fast recovery = < 500 ns, > 200mA (Io) Fast recovery = < 500 ns, > 200mA (Io) Fast recovery = < 500 ns, > 200mA (Io) Fast recovery = < 500 ns, > 200mA (Io)
Reverse recovery time (trr) 35ns - - 35ns 35ns 35ns 35ns
Current at different Vr - Reverse leakage current 20µA @ 400V - - 20µA @ 400V 20µA @ 600V 20µA @ 400V 20µA @ 600V
Installation type Through hole - - Through hole Through hole Through hole Through hole
Package/casing DO-201AD, axial - - DO-201AD, axial DO-201AD, axial DO-201AD, axial DO-201AD, axial
Supplier device packaging DO-201AD - - DO-201AD DO-201AD DO-201AD DO-201AD
Operating Temperature - Junction -40°C ~ 150°C - - -40°C ~ 150°C -40°C ~ 150°C -40°C ~ 150°C -40°C ~ 150°C

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