UNISONIC TECHNOLOGIES CO., LTD
2SA733
LOW FREQUENCY AMPLIFIER
PNP EPITAXIAL SILICON
TRANSISTOR
DESCRIPTION
The UTC
2SA733
is a low frequency amplifier.
3
PNP SILICON TRANSISTOR
3
2
1
SOT-23
FEATURES
* Collector-Emitter voltage:
BV
CBO
=-50V
* Collector current up to -150mA
* High h
FE
linearity
* Complimentary to 2SC945
2
1
SOT-323
*Pb-free plating product number:2SA733L
ORDERING INFORMATION
Order Number
Normal
Lead Free Plating
2SA733-x-AE3-R
2SA733L-x-AE3-R
2SA733-x-AL3-R
2SA733L-x-AL3-R
Package
SOT-23
SOT-323
Pin Assignment
1
2
3
E
C
B
E
C
B
Packing
Tape Reel
Tape Reel
2SA733L-x-AE3-R
(1)Packing Type
(2)Package Type
(3)Rank
(4)Lead Plating
(1) R: Tape Reel
(2) AE3: SOT-23, AL3: SOT-323
(3) x: refer to Classification of h
FE
(4) L: Lead Free Plating, Blank: Pb/Sn
MARKING
A7
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Copyright © 2005 Unisonic Technologies Co., Ltd
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QW-R206-068,B
2SA733
PARAMETER
PNP SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATING
(Ta=25
℃
, unless otherwise specified)
SYMBOL
RATINGS
UNIT
Collector-Base Voltage
V
CBO
-60
V
Collector-Emitter Voltage
V
CEO
-50
V
Emitter-Base Voltage
V
EBO
-5
V
Collector Dissipation(Ta=25
℃
)
250
mW
P
C
Collector Current
I
C
-150
mA
℃
Junction Temperature
T
J
125
℃
Storage Temperature
T
STG
-55 ~ +150
Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS
(Ta=25
℃
, unless otherwise specified)
PARAMETER
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Collector-Emitter Saturation Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
DC Current Gain(note)
Current Gain Bandwidth Product
Output Capacitance
Noise Figure
SYMBOL
BV
CBO
BV
CEO
V
CE(SAT)
I
CBO
I
EBO
h
FE
f
T
Cob
NF
TEST CONDITIONS
I
C
=-100
µ
A, I
E
=0
I
C
=-10mA, I
B
=0
I
C
=-100mA, I
B
=-10mA
V
CB
=-40V, I
E
=0
V
EB=
-3V, I
C
=0
V
CE
=-6V, I
C
=-1mA
V
CE
=-10V, I
C
=-50mA
V
CB
=-10V, I
E
=0, f=1MHz
I
C
=-0.1mA, V
CE
=-6V
R
G
=10k
Ω
, f=100Hz
MIN
-60
-50
TYP MAX UNIT
V
V
-0.1 -0.3
V
-100 nA
-100 nA
600
190
MHz
2.0
3.0
pF
4.0
6.0
dB
90
100
CLASSIFICATION OF h
FE
RANK
RANGE
R
90-180
Q
135-270
P
200-400
K
300-600
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QW-R206-068,B
2SA733
TYPICAL CHARACTERISTICS
Fig.1 Static Characteristics
-100
-80
I
B
=-300µA
-60
-40
I
B
=-250µA
I
B
=-200µA
I
B
=-150µA
-20
0
I
B
=-100µA
I
B
=-50µA
0
-4
-8
-12
-16
-20
Collector-Emitter Voltage ( V)
10
0
-10
-1
10
3
PNP SILICON TRANSISTOR
Fig.2 DC Current Gain
Collector Current, I
C
(mA)
V
CE
=-6V
DC Current Gain, h
FE
10
2
10
1
-10
0
-10
1
-10
2
Collector Current, I
C
(mA)
-10
3
Fig.3 Base-Emitter on Voltage
-10
2
Fig.4 Saturation Voltage
-10
4
I
C
=10*I
B
Collector Current, I
C
(mA)
-10
1
V
CE
=-6V
Saturation Voltage (MV)
-10
3
V
BE(SAT)
V
CE(SAT)
-10
2
-10
0
-10
-1
0
-0.2
-0.4
-0.6
-0.8
-1.0
-10
-10
-1
1
-10
0
-10
1
-10
2
-10
3
Base-Emitter Voltage (V)
Fig.5 Current Gain-Bandwidth Product
Collector Current, I
C
(mA)
Fig.6 Collector Output Capacitance
10
2
Current Gain-Bandwidth Product, f
T
(MHz)
10
3
10
2
V
CE
=-6V
Capacitance, Cob (pF)
-10
2
10
1
10
1
10
0
10
0 -1
-10
-10
-10
Collector Current, I
C
(mA)
0
1
10
-1
-10
0
-10
1
-10
2
-10
3
Collector-Base Voltage (V)
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QW-R206-068,B
2SA733
PNP SILICON TRANSISTOR
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
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www.unisonic.com.tw
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QW-R206-068,B
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