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2N6134

Description
4 A, 55 V, NPN, Si, POWER TRANSISTOR, TO-3
Categorysemiconductor    Discrete semiconductor   
File Size325KB,8 Pages
ManufacturerETC
Download Datasheet Parametric View All

2N6134 Overview

4 A, 55 V, NPN, Si, POWER TRANSISTOR, TO-3

2N6134 Parametric

Parameter NameAttribute value
Number of terminals2
Transistor polarityNPN
Maximum collector current4 A
Maximum Collector-Emitter Voltage55 V
Processing package descriptionTO-3, 2 PIN
stateACTIVE
packaging shapeROUND
Package SizeFLANGE MOUNT
Terminal formPIN/PEG
terminal coatingTIN LEAD
Terminal locationBOTTOM
Packaging MaterialsMETAL
structureSINGLE
Number of components1
Transistor component materialsSILICON
Transistor typeGENERAL PURPOSE POWER
Minimum DC amplification factor25
Rated crossover frequency0.0300 MHz

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