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1SS119

Description
0.15 A, SILICON, SIGNAL DIODE, DO-34
CategoryDiscrete semiconductor    diode   
File Size23KB,6 Pages
ManufacturerHitachi (Renesas )
Websitehttp://www.renesas.com/eng/
Download Datasheet Parametric View All

1SS119 Overview

0.15 A, SILICON, SIGNAL DIODE, DO-34

1SS119 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerHitachi (Renesas )
Parts packaging codeDO-34
package instructionO-LALF-W2
Contacts2
Reach Compliance Codeunknown
ECCN codeEAR99
Is SamacsysN
Other featuresHIGH RELIABILITY
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
JEDEC-95 codeDO-34
JESD-30 codeO-LALF-W2
Number of components1
Number of terminals2
Maximum operating temperature175 °C
Maximum output current0.15 A
Package body materialGLASS
Package shapeROUND
Package formLONG FORM
Maximum power dissipation0.25 W
Certification statusNot Qualified
Maximum repetitive peak reverse voltage30 V
Maximum reverse recovery time0.0035 µs
surface mountNO
Terminal formWIRE
Terminal locationAXIAL
Base Number Matches1
1SS119
Silicon Epitaxial Planar Diode for High Speed Switching
ADE-208-180A (Z)
Rev. 1
Aug. 1995
Features
Low capacitance. (C = 3.0pF max)
Short reverse recovery time. (t
rr
= 3.5ns max)
Small glass package (MHD) enables easy mounting and high reliability.
Ordering Information
Type No.
1SS119
Cathode band
Light Blue
Package Code
MHD
Outline
1
Cathode band
2
1. Cathode
2. Anode
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