Green
DMP4010SK3
P-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
BV
DSS
-40V
R
DS(ON)
Max
9.9mΩ @ V
GS
= -10V
14mΩ @ V
GS
= -4.5V
I
D
T
C
= +25°
C
-50A
-45A
Features and Benefits
Description
NEW PRODUCT
This new generation MOSFET is designed to minimize the on-state
resistance (R
DS(ON)
), yet maintain superior switching performance,
making it ideal for high efficiency power management applications.
100% Unclamped Inductive Switch (UIS) Test in Production
Low On-Resistance
Fast Switching Speed
Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Mechanical Data
Case: TO252
Case Material: Molded Plastic, ―Green‖ Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections: See Diagram
Terminals: Finish – Matte Tin Finish Annealed over Copper
Leadframe. Solderable per MIL-STD-202, Method 208
Weight: 0.33 grams (Approximate)
Applications
DC-DC Converters
Power Management Functions
Backlighting
TO252
D
D
G
D
G
Top View
S
Top View
Pin-Out
S
Equivalent Circuit
Ordering Information
(Note 4)
Part Number
DMP4010SK3-13
Notes:
Case
TO252
Packaging
2,500/Tape & Reel
1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green‖ products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
P4010S
YYWW
= Manufacturer’s Marking
.
P4010S = Product Type Marking Code
YYWW = Date Code Marking
YY = Year (ex: 15 = 2015)
WW = Week (01 to 53)
DMP4010SK3
Document number: DS37770 Rev. 2 - 2
1 of 7
www.diodes.com
October 2015
© Diodes Incorporated
DMP4010SK3
Maximum Ratings
(@ T
A
= +25° unless otherwise specified.)
C,
Characteristic
Drain-Source Voltage
Gate-Source Voltage
Steady
State
Steady
State
T
C
= +25°
C
T
C
= +70°
C
T
A
= +25°
C
T
A
= +70°
C
Symbol
V
DSS
V
GSS
I
D
I
D
I
DM
I
S
I
AS
E
AS
Value
-40
±25
-50
-40
-15
-12
-100
-5.5
-22
260
Unit
V
V
A
A
A
A
A
mJ
Continuous Drain Current (Note 6) V
GS
= -10V
Pulsed Drain Current (10s Pulse, Duty Cycle = 1%)
Maximum Body Diode Forward Current (Note 6)
Avalanche Current, L = 1mH (Note 7)
Avalanche Energy, L = 1mH (Note 7)
NEW PRODUCT
Thermal Characteristics
Characteristic
Total Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient (Note 5)
Total Power Dissipation (Note 6)
Thermal Resistance, Junction to Ambient (Note 6)
Thermal Resistance, Junction to Case
Operating and Storage Temperature Range
Steady State
Steady State
Symbol
P
D
R
θJA
P
D
R
θJA
R
θJC
T
J,
T
STG
Value
1.7
73
3.3
38
1.0
-55 to +150
Unit
W
°
C/W
W
°
C/W
°
C
Electrical Characteristics
Characteristic
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
Static Drain-Source On-Resistance
(@ T
A
= +25° unless otherwise specified.)
C,
Symbol
BV
DSS
I
DSS
I
GSS
V
GS(TH)
R
DS(ON)
V
SD
C
iss
C
oss
C
rss
R
g
Q
g
Q
g
Q
gs
Q
gd
t
D(ON)
t
R
t
D(OFF)
t
F
t
RR
Q
RR
Min
-40
-1.5
—
—
Typ
-2
7.5
10.5
-0.7
4,234
1,036
526
7.8
42.7
91
14.2
13.5
13.2
10
303
138
26
20
Max
-1
100
-2.5
9.9
14
-1
—
—
Unit
V
µA
nA
V
mΩ
V
Test Condition
V
GS
= 0V, I
D
= -250µA
V
DS
= -40V, V
GS
= 0V
V
GS
=
25V,
V
DS
= 0V
V
DS
= V
GS
, I
D
= -250µA
V
GS
= -10V, I
D
= -9.8A
V
GS
= -4.5V, I
D
= -9.8A
V
GS
= 0V, I
S
= -1A
V
DS
= -20V, V
GS
= 0V
f = 1MHz
V
DS
= 0V, V
GS
= 0V, f = 1MHz
V
DS
= -20V,
I
D
= -9.8A
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge (V
GS
= -4.5V)
Total Gate Charge (V
GS
= -10V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Reverse Recovery Time
Reverse Recovery Charge
Notes:
pF
Ω
nC
ns
V
GS
= -10V, V
DD
= -20V,
R
G
= 6Ω, I
D
= -1A
I
F
= -9.8A, di/dt = -100A/µs
I
F
= -9.8A, di/dt = -100A/µs
ns
nC
5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
7. I
AS
and E
AS
ratings are based on low frequency and duty cycles to keep T
J
= +25°
C.
8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to product testing.
DMP4010SK3
Document number: DS37770 Rev. 2 - 2
2 of 7
www.diodes.com
October 2015
© Diodes Incorporated
DMP4010SK3
30.0
25.0
V
GS
= -10.0V
I
D
, DRAIN CURRENT (A)
V
GS
=-5.0V
V
GS
= -4.5V
V
GS
= -4.0V
15.0
10.0
5.0
V
GS
= -2.5V
0.0
0
0.4
0.8
1.2
1.6
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 1. Typical Output Characteristic
2
0
1
2
2.5
3
3.5
V
GS
, GATE-SOURCE VOLTAGE (V)
Figure 2. Typical Transfer Characteristic
1.5
4
V
GS
= -3.5V
V
GS
= -3.0V
16
20
V
DS
= -5.0V
I
D
, DRAIN CURRENT (A)
20.0
12
8
T
A
=125℃
T
A
=85℃
NEW PRODUCT
4
T
A
=150℃
T
A
=25℃
T
A
=-55℃
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE (Ω)
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE (Ω)
0.014
0.03
0.025
0.02
0.015
0.01
0.005
0
0
5
10
15
20
25
I
D
= -9.8A
0.012
V
GS
= -4.5V
0.010
0.008
V
GS
= -10V
0.006
0.004
0
5
10
15
20
25
I
D
, DRAIN-SOURCE CURRENT (A)
30
Figure 3. Typical On-Resistance vs. Drain Current and
Gate Voltage
0.018
T
A
=150℃
T
A
=125℃
T
A
=85℃
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE
(NORMALIZED)
V
GS
= -4.5V
0.016
0.014
0.012
T
A
=25℃
0.01
0.008
T
A
=-55℃
0.006
10
15
20
25
30
I
D
, DRAIN CURRENT(A)
Figure 5. Typical On-Resistance vs. Drain Current and
Temperature
3 of 7
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0
5
1.8
1.6
1.4
1.2
1
0.8
0.6
-50
V
GS
, GATE-SOURCE VOLTAGE (V)
Figure 4. Typical Transfer Characteristic
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE (Ω)
V
GS
= -10V, I
D
= -9.8A
V
GS
= -4.5V, I
D
= -9.8A
-25
0
25
50
75
100
125
150
T
J
, JUNCTION TEMPERATURE (℃)
Figure 6. On-Resistance Variation with Temperature
October 2015
© Diodes Incorporated
DMP4010SK3
Document number: DS37770 Rev. 2 - 2
DMP4010SK3
R
DS(ON)
, DRAIN-SOURCE ON-RESISTANCE (Ω)
V
GS(TH)
, GATE THRESHOLD VOLTAGE (V)
0.02
0.018
0.016
0.014
0.012
0.01
0.008
0.006
0.004
-50
-25
0
25
50
75 100 125
T
J
, JUNCTION TEMPERATURE (℃)
150
V
GS
= -10V, I
D
= -9.8A
V
GS
= -4.5V, I
D
= -9.8A
2.2
2
1.8
1.6
1.4
1.2
1
-50
-25
0
25
50
75 100 125 150
T
J
, JUNCTION TEMPERATURE (℃)
I
D
= -250μA
I
D
= -1mA
NEW PRODUCT
Figure 7. On-Resistance Variation with Temperature
Figure 8. Gate Threshold Variation vs. Junction
Temperature
10000
f=1MHz
C
T
, JUNCTION CAPACITANCE (pF)
30
V
GS
= 0V
C
iss
25
I
S
, SOURCE CURRENT (A)
20
C
oss
1000
C
rss
15
T
A
= 85
o
C
T
A
= 25
o
C
5
T
A
= 150
o
C
T
A
= -55
o
C
0
0
0.3
0.6
0.9
1.2
1.5
V
SD
, SOURCE-DRAIN VOLTAGE (V)
Figure 9. Diode Forward Voltage vs. Current
10
T
A
=
125
o
C
100
0
5
10
15
20
25
30
-V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 10. Typical Junction Capacitance
10
1000
R
DS(ON)
Limited
P
W
=10µs
P
W
=1µs
8
I
D
, DRAIN CURRENT (A)
100
V
GS
(V)
6
V
DS
= -20V, I
D
= -9.8A
10
4
1
P
W
=100µs
P
W
=1ms
P
W
=10ms
P
W
=100ms
T
J(Max)
= 150℃
T
A
= 25℃
Single Pulse
DUT on infinite heatsink
V
GS
= -10V
0.1
DC
2
0.1
0
0
20
40
60
Qg (nC)
Figure 11. Gate Charge
80
100
120
0.01
1
10
V
DS
, DRAIN-SOURCE VOLTAGE (V)
Figure 12. SOA, Safe Operation Area
100
DMP4010SK3
Document number: DS37770 Rev. 2 - 2
4 of 7
www.diodes.com
October 2015
© Diodes Incorporated
DMP4010SK3
1
r(t), TRANSIENT THERMAL RESISTANCE
D=0.7
D=0.5
D=0.3
D=0.9
0.1
D=0.1
D=0.05
D=0.02
0.01
D=0.01
D=0.005
D=Single Pulse
0.001
1E-06
1E-05
0.0001
0.001
0.01
0.1
1
10
t1, Pulse Duration Time (sec)
Figure 13. Transient Thermal Resistance
R
θJA
(t) = r(t) * R
θJA
R
θJA
= 2.72℃/W
Duty Cycle, D = t1 / t2
NEW PRODUCT
DMP4010SK3
Document number: DS37770 Rev. 2 - 2
5 of 7
www.diodes.com
October 2015
© Diodes Incorporated
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