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2EZ6.8D10

Description
7.5 V, 3 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-204AL
CategoryDiscrete semiconductor    diode   
File Size45KB,3 Pages
ManufacturerEIC [EIC discrete Semiconductors]
Environmental Compliance
Download Datasheet Parametric View All

2EZ6.8D10 Overview

7.5 V, 3 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-204AL

2EZ6.8D10 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerEIC [EIC discrete Semiconductors]
Reach Compliance Codecompli
ConfigurationSINGLE
Diode typeZENER DIODE
Maximum dynamic impedance2 Ω
Number of components1
Maximum operating temperature175 °C
Maximum power dissipation2 W
Nominal reference voltage6.8 V
surface mountNO
Maximum voltage tolerance10%
Working test current73 mA
Certificate TH97/10561QM
Certificate TW00/17276EM
2EZ Series
V
Z
: 2.7 - 330 Volts
P
D
: 2 Watts
FEATURES :
* Complete Voltage Range 2.7 to 330 Volts
* High peak reverse power dissipation
* High reliability
* Low leakage current
*
±
10% tolerance
* Pb / RoHS Free
SILICON ZENER DIODES
DO - 41
0.107 (2.7)
0.080 (2.0)
1.00 (25.4)
MIN.
0.205 (5.2)
0.166 (4.2)
0.034 (0.86)
0.028 (0.71)
1.00 (25.4)
MIN.
MECHANICAL DATA
* Case : DO-41 Molded plastic
* Epoxy : UL94V-O rate flame retardant
* Lead : Axial lead solderable per MIL-STD-202,
method 208 guaranteed
* Polarity : Color band denotes cathode end
* Mounting position : Any
* Weight : 0.339 gram
Dimensions in inches and ( millimeters )
MAXIMUM RATINGS
Rating at 25
°
C ambient temperature unless otherwise specified
Rating
DC Power Dissipation at T
L
= 75 °C (Note1)
Maximum Forward Voltage at I
F
= 200 mA
Junction Temperature Range
Storage Temperature Range
Note :
(1) T
L
= Lead temperature at 3/8 " (9.5mm) from body
Symbol
P
D
V
F
T
J
T
STG
Value
2.0
1.2
- 55 to + 175
- 55 to + 175
Unit
W
V
°C
°C
Fig. 1 POWER TEMPERATURE DERATING CURVE
2.5
P
D
, MAXIMUM DISSIPATION
(WATTS)
L = 3/8" (9.5mm)
2.0
1.5
0.5
0
0
25
50
75
100
125
T
L,
LEAD TEMPERATURE (
°
C)
150
175
Page 1 of 3
Rev. 06 : May 27, 2006
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