TSSA3U60
Taiwan Semiconductor
3A, 60V Trench Schottky Rectifier
FEATURES
Patented Trench Schottky technology
Ideal for automated placement
High surge current capability
Compliant to RoHS directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
● Halogen-free according to IEC 61249-2-21
●
●
●
●
KEY PARAMETERS
PARAMETER
I
F(AV)
V
RRM
I
FSM
T
J MAX
Package
Configuration
VALUE
3
60
60
150
UNIT
A
V
A
°C
APPLICATIONS
●
DO-214AC (SMA)
Single dice
Trench Schottky barrier rectifier is designed for
high frequency miniature switched mode power
supplies such as adapters, lighting.
MECHANICAL DATA
●
●
●
●
●
●
●
●
●
Case: DO-214AC (SMA)
Molding compound meets UL 94V-0 flammability rating
Moisture sensitivity level: level 1, per J-STD-020
Packing code with suffix "G" means green compound
(halogen-free)
Part no. with suffix “H” means AEC-Q101 qualified
Terminal: Matte tin plated leads, solderable per J-STD-002
Meet JESD 201 class 2 whisker test
Polarity: As marked
Weight: 0.06 g (approximately)
DO-214AC (SMA)
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25°C unless otherwise noted)
PARAMETER
Marking code on the device
Repetitive peak reverse voltage
Reverse voltage, total rms value
Maximum DC blocking voltage
Forward current
Surge peak forward current, 8.3 ms single half sine-
wave superimposed on rated load per diode
Junction temperature
Storage temperature
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
T
J
T
STG
SYMBOL
TSSA3U60
3U60
60
42
60
3
60
- 55 to +150
- 55 to +150
V
V
V
A
A
°C
°C
UNIT
1
Version:F1612
TSSA3U60
Taiwan Semiconductor
THERMAL PERFORMANCE
PARAMETER
Junction to Lead Thermal Resistance
Junction to Ambient Thermal Resistance
Junction to Case Thermal Resistance
SYMBOL
R
ӨJL
R
ӨJA
R
ӨJC
LIMIT
27
70
20
UNIT
°C/W
°C/W
°C/W
Thermal Performance Note:
Units mounted on recommended PCB (5mm x 5mm Cu pad test board)
ELECTRICAL SPECIFICATIONS
(T
A
= 25°C unless otherwise noted)
PARAMETER
Forward voltage per diode
(1)
CONDITIONS
I
F
= 3A,T
J
= 25°C
I
F
= 3A,T
J
= 125°C
(2)
SYMBOL
V
F
TYP
0.48
0.41
-
12
450
20
MAX
0.54
0.50
500
30
610
25
UNIT
V
µA
mA
pF
ns
Reverse current @ rated V
R
per diode
Junction capacitance
Reverse recovery time
Notes:
T
J
= 25°C
T
J
= 125°C
1 MHz, V
R
=4.0V
I
F
=0.5A ,I
R
=1.0A
I
RR
=0.25A
I
R
C
T
t
rr
1. Pulse test with PW=0.3 ms
2. Pulse test with PW=30 ms
ORDERING INFORMATION
PART NO.
PART NO.
SUFFIX
PACKING
CODE
E3
TSSA3U60
(Note 1)
H
E2
M2
R3
Note:
1. Whole series with green compound (halogen-free)
G
PACKING CODE
SUFFIX
PACKAGE
Clip SMA
Clip SMA
SMA
SMA
PACKING
1,800 / 7" Plastic reel
7,500 / 13" Plastic reel
7,500 / 13" Plastic reel
1,800 / 7" Plastic reel
EXAMPLE
EXAMPLE P/N
TSSA3U60HR3G
PART NO.
TSSA3U60
PART NO.
SUFFIX
H
PACKING
CODE
R3
PACKING CODE
SUFFIX
G
DESCRIPTION
Green compound
AEC-Q101 qualified
2
Version:F1612
TSSA3U60
Taiwan Semiconductor
CHARACTERISTICS CURVES
(T
A
= 25°C unless otherwise noted)
Forward Current Derating Curve
AVERAGE FORWARD CURRENT (A)
4
Total Capacitance Characteristics
1000
3
CAPACITANCE (pF)
2
100
1
WITH HEATSINK
5mm x 5mm PAD PCB
0
50
75
100
125
150
10
0
LEAD TEMPERATURE (°C)
f=1.0MHz
Vsig=50mVp-p
1
10
100
REVERS E VOLTAGE (V)
Typical Reverse Characteristics
INSTANTANEOUS REVERSE CURRENT (mA)
INSTANTANEOUS FORWARD CURRENT (A)
10
100
Typical Forward Characteristics
10
T
J
=150°C
1
T
J
=125°C
T
J
=100°C
10 1
UF1DLW
T
J
=150°C
T =125°C
J
0.1
0.1
1
0.01
0.1
0.001
0.3
0.01
0.0
0.1
0.2
0.3
0.4
0.5
0.6
J
=125°C
0.7
T
0.4
0.5
0.8
0.6
T
J
=25°C
0.01
T
J
=100°C
T
J
=25°C
0.001
T
J
=25°C
Pulse width
0.9
1
0.8
0.9
1.1
1.0
1.2
0.0001
10
20
30
40
50
60
70
80
90
100
0.7
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
FORWARD VOLTAGE (V)
3
Version:F1612
(A)
TSSA3U60
Taiwan Semiconductor
PACKAGE OUTLINE DIMENSIONS
DO-214AC (SMA)
DIM
A
B
C
D
E
F
G
H
Unit (mm)
Min
1.27
4.06
2.29
1.99
0.90
4.95
0.10
0.15
Max
1.58
4.60
2.83
2.50
1.41
5.33
0.20
0.31
Unit (inch)
Min
0.050
0.160
0.090
0.078
0.035
0.195
0.004
0.006
Max
0.062
0.181
0.111
0.098
0.056
0.210
0.008
0.012
SUGGESTED PAD LAYOUT
Symbol
A
B
C
D
E
Unit (mm)
1.68
1.52
3.93
2.41
5.45
Unit (inch)
0.066
0.060
0.155
0.095
0.215
MARKING DIAGRAM
P/N
G
YW
F
= Marking Code
= Green Compound
= Date Code
= Factory Code
4
Version:F1612
TSSA3U60
Taiwan Semiconductor
Notice
Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf,
assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, to
any intellectual property rights is granted by this document. Except as provided in TSC’s terms and conditions of
sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty,
relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose,
merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify TSC for any damages resulting from such improper use or sale.
5
Version:F1612
Embedded System
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