MUN5232DW1,
NSBC143EDXV6,
NSBC143EDP6
Dual NPN Bias Resistor
Transistors
R1 = 4.7 kW, R2 = 4.7 kW
NPN Transistors with Monolithic Bias
Resistor Network
This series of digital transistors is designed to replace a single
device and its external resistor bias network. The Bias Resistor
Transistor (BRT) contains a single transistor with a monolithic bias
network consisting of two resistors; a series base resistor and a
base-emitter resistor. The BRT eliminates these individual
components by integrating them into a single device. The use of a BRT
can reduce both system cost and board space.
Features
(3)
R
1
Q
1
Q
2
R
2
(4)
(5)
R
1
(6)
www.onsemi.com
PIN CONNECTIONS
(2)
R
2
(1)
•
•
•
•
Simplifies Circuit Design
Reduces Board Space
Reduces Component Count
S and NSV Prefix for Automotive and Other Applications
Requiring Unique Site and Control Change Requirements;
AEC-Q101 Qualified and PPAP Capable
•
These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
(T
A
= 25°C, common for Q
1
and Q
2
, unless otherwise noted)
Rating
Collector-Base Voltage
Collector-Emitter Voltage
Collector Current
−
Continuous
Input Forward Voltage
Input Reverse Voltage
Symbol
V
CBO
V
CEO
I
C
V
IN(fwd)
V
IN(rev)
Max
50
50
100
30
10
Unit
Vdc
Vdc
mAdc
Vdc
Vdc
MARKING DIAGRAMS
6
SOT−363
CASE 419B−02
1
7J MG
G
SOT−563
CASE 463A
7J MG
1
SOT−963
CASE 527AD
TM
1
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
7J/T
M
G
= Specific Device Code
= Date Code*
= Pb-Free Package
ORDERING INFORMATION
Device
MUN5232DW1T1G,
SMUN5232DW1T1G
NSBC143EDXV6T1G
NSBC143EDP6T5G
Package
SOT−363
SOT−563
SOT−963
Shipping
†
3,000/Tape & Reel
4,000/Tape & Reel
8,000/Tape & Reel
(Note: Microdot may be in either location)
*Date Code orientation may vary depending
upon manufacturing location.
†For information on tape and reel specifications, including part orientation and
tape sizes, please refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
©
Semiconductor Components Industries, LLC, 2012
June, 2017
−
Rev. 1
55
Publication Order Number:
DTC143ED/D
MUN5232DW1, NSBC143EDXV6, NSBC143EDP6
THERMAL CHARACTERISTICS
Characteristic
MUN5232DW1 (SOT−363) ONE JUNCTION HEATED
Total Device Dissipation
(Note 37)
T
A
= 25°C
(Note 38)
Derate above 25°C
(Note 37)
(Note 38)
Thermal Resistance,
Junction to Ambient
(Note 37)
(Note 38)
P
D
187
256
1.5
2.0
670
490
mW
mW/°C
°C/W
Symbol
Max
Unit
R
qJA
MUN5232DW1 (SOT−363) BOTH JUNCTION HEATED
(Note 39)
Total Device Dissipation
(Note 37)
T
A
= 25°C
(Note 38)
Derate above 25°C
(Note 37)
(Note 38)
Thermal Resistance,
Junction to Ambient
(Note 38)
Thermal Resistance,
Junction to Lead (Note 37)
(Note 38)
Junction and Storage Temperature Range
NSBC143EDXV6 (SOT−563) ONE JUNCTION HEATED
Total Device Dissipation
(Note 37)
T
A
= 25°C
Derate above 25°C
(Note 37)
Thermal Resistance,
Junction to Ambient
(Note 37)
P
D
357
2.9
350
mW
mW/°C
°C/W
(Note 37)
P
D
250
385
2.0
3.0
493
325
188
208
−55
to +150
mW
mW/°C
°C/W
R
qJA
R
qJL
°C/W
T
J
, T
stg
°C
R
qJA
NSBC143EDXV6 (SOT−563) BOTH JUNCTION HEATED
(Note 39)
Total Device Dissipation
(Note 37)
T
A
= 25°C
Derate above 25°C
(Note 37)
Thermal Resistance,
Junction to Ambient
(Note 37)
P
D
500
4.0
250
−55
to +150
mW
mW/°C
°C/W
°C
R
qJA
T
J
, T
stg
P
D
Junction and Storage Temperature Range
NSBC143EDP6 (SOT−963) ONE JUNCTION HEATED
Total Device Dissipation
(Note 40)
T
A
= 25°C
(Note 41)
Derate above 25°C
(Note 40)
(Note 41)
Thermal Resistance,
Junction to Ambient
(Note 41)
(Note 40)
231
269
1.9
2.2
540
464
MW
mW/°C
°C/W
R
qJA
NSBC143EDP6 (SOT−963) BOTH JUNCTION HEATED
(Note 39)
Total Device Dissipation
(Note 40)
T
A
= 25°C
(Note 41)
Derate above 25°C
(Note 40)
(Note 41)
Thermal Resistance,
Junction to Ambient
(Note 41)
(Note 40)
P
D
339
408
2.7
3.3
369
306
−55
to +150
MW
mW/°C
°C/W
R
qJA
Junction and Storage Temperature Range
37. FR−4 @ Minimum Pad.
38. FR−4 @ 1.0
×
1.0 Inch Pad.
39. Both junction heated values assume total power is sum of two equally powered channels.
40. FR−4 @ 100 mm
2
, 1 oz. copper traces, still air.
41. FR−4 @ 500 mm
2
, 1 oz. copper traces, still air.
T
J
, T
stg
°C
www.onsemi.com
56
MUN5232DW1, NSBC143EDXV6, NSBC143EDP6
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C, common for Q
1
and Q
2
, unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Collector-Base Cutoff Current
(V
CB
= 50 V, I
E
= 0)
Collector-Emitter Cutoff Current
(V
CE
= 50 V, I
B
= 0)
Emitter-Base Cutoff Current
(V
EB
= 6.0 V, I
C
= 0)
Collector-Base Breakdown Voltage
(I
C
= 10
mA,
I
E
= 0)
Collector-Emitter Breakdown Voltage (Note 42)
(I
C
= 2.0 mA, I
B
= 0)
ON CHARACTERISTICS
DC Current Gain (Note 42)
(I
C
= 5.0 mA, V
CE
= 10 V)
Collector-Emitter Saturation Voltage (Note 42)
(I
C
= 10 mA, I
B
= 1.0 mA)
Input Voltage (Off)
(V
CE
= 5.0 V, I
C
= 100
mA)
Input Voltage (On)
(V
CE
= 0.2 V, I
C
= 20 mA)
Output Voltage (On)
(V
CC
= 5.0 V, V
B
= 2.5 V, R
L
= 1.0 kW)
Output Voltage (Off)
(V
CC
= 5.0 V, V
B
= 0.25 V, R
L
= 1.0 kW)
Input Resistor
Resistor Ratio
42. Pulsed Condition: Pulse Width = 300 ms, Duty Cycle
≤
2%.
h
FE
V
CE(sat)
V
i(off)
V
i(on)
V
OL
V
OH
R1
R
1
/R
2
15
−
−
−
−
4.9
3.3
0.8
30
−
1.2
2.4
−
−
4.7
1.0
−
0.25
−
−
0.2
−
6.1
1.2
V
Vdc
Vdc
Vdc
Vdc
kW
I
CBO
I
CEO
I
EBO
V
(BR)CBO
V
(BR)CEO
−
−
−
50
50
−
−
−
−
−
100
500
1.5
−
−
nAdc
nAdc
mAdc
Vdc
Vdc
Symbol
Min
Typ
Max
Unit
400
P
D
, POWER DISSIPATION (mW)
350
300
250
200
150
100
50
0
−50
−25
0
25
50
75
100
125
150
(1) (2) (3)
(1) SOT−363; 1.0
×
1.0 Inch Pad
(2) SOT−563; Minimum Pad
(3) SOT−963; 100 mm
2
, 1 oz. Copper Trace
AMBIENT TEMPERATURE (°C)
Figure 98. Derating Curve
www.onsemi.com
57
MUN5232DW1, NSBC143EDXV6, NSBC143EDP6
TYPICAL CHARACTERISTICS
MUN5232DW1, NSBC143EDXV6
V
CE(sat)
, COLLECTOR−EMITTER VOLTAGE (V)
1
I
C
/I
B
= 10
h
FE
, DC CURRENT GAIN
100
1000
V
CE
= 10 V
25°C
150°C
−55°C
0.1
150°C
25°C
−55°C
10
1
0.01
0
10
20
30
40
50
0.1
0.1
1
10
100
I
C
, COLLECTOR CURRENT (mA)
I
C
, COLLECTOR CURRENT (mA)
Figure 99. V
CE(sat)
, vs. I
C
3.6
C
ob
, OUTPUT CAPACITANCE (pF)
3.2
2.8
2.4
2.0
1.6
1.2
0.8
0.4
0
0
10
20
30
40
50
100
I
C
, COLLECTOR CURRENT (mA)
Figure 100. DC Current Gain
f = 10 kHz
I
E
= 0 A
T
A
= 25°C
150°C
10
25°C
−55°C
1
0.1
V
O
= 5 V
0.01
0
1
2
3
4
5
V
R
, REVERSE VOLTAGE (V)
V
in
, INPUT VOLTAGE (V)
Figure 101. Output Capacitance
100
Figure 102. Output Current vs. Input Voltage
V
in
, INPUT VOLTAGE (V)
10
−55°C
1
150°C
25°C
V
O
= 0.2 V
0.1
0
10
20
30
40
50
I
C
, COLLECTOR CURRENT (mA)
Figure 103. Input Voltage vs. Output Current
www.onsemi.com
58
MUN5232DW1, NSBC143EDXV6, NSBC143EDP6
TYPICAL CHARACTERISTICS
NSBC143EDP6
V
CE(sat)
, COLLECTOR−EMITTER VOLTAGE (V)
1
I
C
/I
B
= 10
h
FE
, DC CURRENT GAIN
100
1000
V
CE
= 10 V
25°C
150°C
−55°C
25°C
0.1
150°C
−55°C
10
1
0.01
0
10
20
30
40
50
0.1
0.1
1
10
100
I
C
, COLLECTOR CURRENT (mA)
I
C
, COLLECTOR CURRENT (mA)
Figure 104. V
CE(sat)
, vs. I
C
2.4
C
ob
, OUTPUT CAPACITANCE (pF)
I
C
, COLLECTOR CURRENT (mA)
2.0
1.6
1.2
0.8
0.4
0
f = 10 kHz
I
E
= 0 A
T
A
= 25°C
100
Figure 105. DC Current Gain
150°C
25°C
−55°C
10
1
0.1
V
O
= 5 V
0.01
0
1
2
V
in
, INPUT VOLTAGE (V)
3
4
0
10
20
30
40
50
V
R
, REVERSE VOLTAGE (V)
Figure 106. Output Capacitance
10
25°C
−55°C
1
150°C
Figure 107. Output Current vs. Input Voltage
V
in
, INPUT VOLTAGE (V)
V
O
= 0.2 V
0.1
0
10
20
30
40
50
I
C
, COLLECTOR CURRENT (mA)
Figure 108. Input Voltage vs. Output Current
www.onsemi.com
59
京公网安备 11010802033920号
EEWORLD
