25AA1024/25LC1024
1 Mbit SPI Bus Serial EEPROM
Device Selection Table
Part Number
25LC1024
25AA1024
V
CC
Range
2.5-5.5V
1.8-5.5V
Page Size
256 Byte
256 Byte
Temp. Ranges
I,E
I
Packages
P, SM, MF
P, SM, MF
Features:
• 20 MHz max. Clock Speed
• Byte and Page-level Write Operations:
- 256 byte page
- 6 ms max. write cycle time
- No page or sector erase required
• Low-Power CMOS Technology:
- Max. Write current: 5 mA at 5.5V, 20 MHz
- Read current: 7 mA at 5.5V, 20 MHz
- Standby current: 1μA at 2.5V
(Deep power-down)
• Electronic Signature for Device ID
• Self-Timed Erase and Write Cycles:
- Page Erase (6 ms max.)
- Sector Erase (10 ms max.)
- Chip Erase (10 ms max.)
• Sector Write Protection (32K byte/sector):
- Protect none, 1/4, 1/2 or all of array
• Built-In Write Protection:
- Power-on/off data protection circuitry
- Write enable latch
- Write-protect pin
• High Reliability:
- Endurance: 1M erase/write cycles
• Temperature Ranges Supported:
- Industrial (I):
-40°C to +85°C
- Automotive (E):
-40°C to +125°C
• Pb-free packages available
Description:
The Microchip Technology Inc. 25AA1024/25LC1024
(25XX1024
*
) is a 1024 Kbit serial EEPROM memory
with byte-level and page-level serial EEPROM func-
tions. It also features Page, Sector and Chip erase
functions typically associated with Flash-based prod-
ucts. These functions are not required for byte or page
write operations. The memory is accessed via a simple
Serial Peripheral Interface (SPI) compatible serial bus.
The bus signals required are a clock input (SCK) plus
separate data in (SI) and data out (SO) lines. Access to
the device is controlled by a Chip Select (CS) input.
Communication to the device can be paused via the
hold pin (HOLD). While the device is paused, transi-
tions on its inputs will be ignored, with the exception of
Chip Select, allowing the host to service higher priority
interrupts.
The 25XX1024 is available in standard packages
including 8-lead PDIP and SOIJ, and advanced 8-lead
DFN package. All devices are Pb-free.
Package Types (not to scale)
DFN
25LC1024
CS 1
SO 2
WP 3
(MF)
8
7
6
5
V
CC
HOLD
SCK
SI
PDIP/SOIJ
(P, SM)
25LC1024
CS
SO
WP
V
SS
1
2
3
4
8
7
6
5
V
CC
HOLD
SCK
SI
Pin Function Table
Name
CS
SO
WP
V
SS
SI
SCK
HOLD
V
CC
Function
Chip Select Input
Serial Data Output
Write-Protect
Ground
Serial Data Input
Serial Clock Input
Hold Input
Supply Voltage
V
SS
4
*25XX1024 is used in this document as a generic part number
for the 25AA1024, 25LC1024 devices.
©
2007 Microchip Technology Inc.
Preliminary
DS21836D-page 1
25AA1024/25LC1024
1.0
ELECTRICAL CHARACTERISTICS
Absolute Maximum Ratings
(†)
V
CC
.............................................................................................................................................................................6.5V
All inputs and outputs w.r.t. V
SS
......................................................................................................... -0.6V to V
CC
+1.0V
Storage temperature .................................................................................................................................-65°C to 150°C
Ambient temperature under bias ...............................................................................................................-40°C to 125°C
ESD protection on all pins ..........................................................................................................................................4 kV
†
NOTICE: Stresses above those listed under “Absolute Maximum Ratings” may cause permanent damage to the
device. This is a stress rating only and functional operation of the device at those or any other conditions above those
indicated in the operational listings of this specification is not implied. Exposure to maximum rating conditions for an
extended period of time may affect device reliability.
TABLE 1-1:
DC CHARACTERISTICS
Industrial (I):
Industrial (I):
Automotive (E):
Min.
.7 V
CC
-0.3
-0.3
—
—
V
CC
-0.5
—
—
—
T
A
= -0°C to +85°C
T
A
= -40°C to +85°C
T
A
= -40°C to +125°C
Max.
V
CC
+1
0.3 V
CC
0.2 V
CC
0.4
0.2
—
±1
±1
7
Units
V
V
V
V
V
V
μA
μA
pF
V
CC
≥
2.7V
V
CC
< 2.7V
I
OL
= 2.1 mA
I
OL
= 1.0 mA, V
CC
< 2.5V
I
OH
= -400
μA
CS = V
CC
, V
IN
= V
SS TO
V
CC
CS = V
CC
, V
OUT
= V
SS TO
V
CC
T
A
= 25°C, CLK = 1.0 MHz,
V
CC
= 5.0V
(Note)
V
CC
= 5.5V; F
CLK
= 20.0 MHz;
SO = Open
V
CC
= 2.5V; F
CLK
= 10.0 MHz;
SO = Open
V
CC
= 5.5V
V
CC
= 2.5V
CS = V
CC
= 5.5V, Inputs tied to V
CC
or
V
SS
, 125°C
CS = V
CC
= 5.5V, Inputs tied to V
CC
or
V
SS
, 85°C
CS = V
CC
= 2.5V, Inputs tied to V
CC
or
V
SS
, 85°C
CS = V
CC
= 5.5V, Inputs tied to V
CC
or
V
SS
, 125°C
V
CC
= 1.8V to 5.5V
V
CC
= 2.0V to 5.5V
V
CC
= 2.5V to 5.5V
Test Conditions
DC CHARACTERISTICS
Param.
No.
D001
D002
D003
D004
D005
D006
D007
D008
D009
Sym.
V
IH1
V
IL1
V
IL2
V
OL
V
OL
V
OH
I
LI
I
LO
C
INT
Characteristic
High-level input
voltage
Low-level input
voltage
Low-level output
voltage
High-level output
voltage
Input leakage current
Output leakage
current
Internal capacitance
(all inputs and
outputs)
D010
I
CC
Read
Operating current
—
—
10
5
mA
mA
mA
mA
μA
μA
μA
μA
D011
D012
I
CC
Write
I
CCS
Standby current
—
—
—
—
7
5
20
12
D13
I
CCSPD
Deep power-down
current
—
—
1
2
Note:
This parameter is periodically sampled and not 100% tested.
DS21836D-page 2
Preliminary
©
2007 Microchip Technology Inc.
25AA1024/25LC1024
TABLE 1-2:
AC CHARACTERISTICS (CONTINUED)
Industrial (I):
Industrial (I):
Automotive (E):
Characteristic
HOLD low to output
High-Z
Min.
15
30
150
15
30
150
—
—
—
—
—
1M
T
A
= -0°C to +85°C
T
A
= -40°C to +85°C
T
A
= -40°C to +125°C
Max.
—
—
—
—
—
—
100
100
10
10
6
—
Units
ns
ns
ns
ns
ns
ns
μs
μs
ms
ms
ms
V
CC
= 1.8V to 5.5V
V
CC
= 2.0V to 5.5V
V
CC
= 2.5V to 5.5V
Conditions
4.5
≤
V
CC
≤
5.5
2.5
≤
V
CC
<
4.5
1.8
≤
V
CC
<
2.5
(Note 1)
4.5
≤
V
CC
≤
5.5
2.5
≤
V
CC
<
4.5
1.8
≤
V
CC
<
2.5
V
CC
= 1.8V to 5.5V
V
CC
= 1.8V to 5.5V
V
CC
= 1.8V to 5.5V
V
CC
= 1.8V to 5.5V
Byte or Page mode and Page
Erase
AC CHARACTERISTICS
Param.
No.
18
Sym.
T
HZ
19
T
HV
HOLD high to output valid
20
21
22
23
24
25
T
REL
T
PD
T
CE
T
SE
T
WC
—
CS High to Standby mode
CS High to Deep power-
down
Chip erase cycle time
Sector erase cycle time
Internal write cycle time
Endurance
E/W
(Note 2)
Per Page
Cycles
Note 1:
This parameter is periodically sampled and not 100% tested.
2:
This parameter is not tested but established by characterization and qualification. For endurance
estimates in a specific application, please consult the Total Endurance™ Model which can be obtained
from our web site at www.microchip.com.
3:
Includes T
HI
time.
TABLE 1-3:
AC Waveform:
V
LO
= 0.2V
AC TEST CONDITIONS
—
(Note 1)
(Note 2)
—
0.5 V
CC
0.5 V
CC
V
HI
= V
CC
- 0.2V
V
HI
= 4.0V
C
L
= 30 pF
Timing Measurement Reference Level
Input
Output
Note 1:
For V
CC
≤
4.0V
2:
For V
CC
> 4.0V
DS21836D-page 4
Preliminary
©
2007 Microchip Technology Inc.
MCU
京公网安备 11010802033920号
EEWORLD
