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25AA080T-I/P

Description
1K X 8 SPI BUS SERIAL EEPROM, PDSO8
Categorystorage   
File Size301KB,22 Pages
ManufacturerMicrochip
Websitehttps://www.microchip.com
Download Datasheet Parametric View All

25AA080T-I/P Overview

1K X 8 SPI BUS SERIAL EEPROM, PDSO8

25AA080T-I/P Parametric

Parameter NameAttribute value
Number of functions1
Number of terminals8
Maximum operating temperature85 Cel
Minimum operating temperature-40 Cel
Maximum supply/operating voltage5.5 V
Minimum supply/operating voltage2.5 V
Rated supply voltage3.3 V
maximum clock frequency2 MHz
Processing package description0.150 INCH, PLASTIC, MS-012, SOIC-8
Lead-freeYes
EU RoHS regulationsYes
China RoHS regulationsYes
stateACTIVE
CraftsmanshipCMOS
packaging shapeRECTANGULAR
Package SizeSMALL OUTLINE
surface mountYes
Terminal formGULL WING
Terminal spacing1.27 mm
terminal coatingMATTE TIN
Terminal locationDUAL
Packaging MaterialsPLASTIC/EPOXY
Temperature levelINDUSTRIAL
memory width8
organize1K X 8
storage density8192 deg
operating modeSYNCHRONOUS
Number of digits1024 words
Number of digits1K
Memory IC typeSPI BUS SERIAL EEPROM
serial parallelSERIAL
Maximum TWC of write cycle5 ms
Not recommended for new designs –
Please use 25AA080A/B or 25LC080A/B.
25AA080/25LC080/25C080
8K SPI Bus Serial EEPROM
Device Selection Table
Part
Number
25AA080
25LC080
25C080
V
CC
Range
1.8-5.5V
2.5-5.5V
4.5-5.5V
Max. Clock
Frequency
1 MHz
2 MHz
3 MHz
Temp.
Ranges
I
I
I,E
Description:
The Microchip Technology Inc. 25AA080/25LC080/
25C080 (25XX080
*
) are 8 Kbit Serial Electrically
Erasable PROMs. The memory is accessed via a
simple Serial Peripheral Interface (SPI) compatible
serial bus. The bus signals required are a clock input
(SCK) plus separate data in (SI) and data out (SO)
lines. Access to the device is controlled through a Chip
Select (CS) input.
Communication to the device can be paused via the
hold pin (HOLD). While the device is paused, transi-
tions on its inputs will be ignored, with the exception of
chip select, allowing the host to service higher priority
interrupts.
Features:
• Low-power CMOS technology:
- Write current: 3 mA maximum
- Read current: 500
A
typical
- Standby current: 500 nA typical
• 1024 x 8-bit organization
• 16 byte page
• Write cycle time: 5 ms max.
• Self-timed erase and write cycles
• Block write protection:
- Protect none, 1/4, 1/2 or all of array
• Built-in write protection:
- Power-on/off data protection circuitry
- Write enable latch
- Write-protect pin
• Sequential read
• High reliability:
- Endurance: 1 M cycles
- Data retention: > 200 years
- ESD protection: > 4000V
• 8-pin PDIP and SOIC (150 mil)
• Temperature ranges supported:
- Industrial (I):
-40C to +85C
- Automotive (E) (25C080):
-40°C to +125°C
Package Types
PDIP/SOIC
CS
SO
WP
V
SS
1
25AA080/
2
3
4
8
7
6
5
V
CC
HOLD
SCK
SI
Block Diagram
Status
Register
HV Generator
I/O Control
Logic
Memory
Control
Logic
X
Dec
EEPROM
Array
Page Latches
SI
SO
CS
SCK
HOLD
WP
V
CC
V
SS
Y Decoder
Sense Amp.
R/W Control
1997-2012 Microchip Technology Inc.
DS21230E-page 1

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