1Z9.1A datasheet, PDF - EEWORLD Datasheet

1Z9.1A: Description200 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-15; CategoryDiscrete semiconductor diode; File Size211KB，4 Pages; ManufacturerToshiba Semiconductor; Websitehttp://toshiba-semicon-storage.com/

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1Z9.1A Overview

200 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-15

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	Toshiba Semiconductor
Parts packaging code	DO-15
package instruction	O-PALF-W2
Contacts	2
Reach Compliance Code	unknown
ECCN code	EAR99
Is Samacsys	N
Shell connection	ISOLATED
Configuration	SINGLE
Diode component materials	SILICON
Diode type	TRANS VOLTAGE SUPPRESSOR DIODE
Maximum dynamic impedance	30 Ω
JEDEC-95 code	DO-15
JESD-30 code	O-PALF-W2
Maximum non-repetitive peak reverse power dissipation	200 W
Number of components	1
Number of terminals	2
Maximum operating temperature	150 °C
Minimum operating temperature	-40 °C
Package body material	PLASTIC/EPOXY
Package shape	ROUND
Package form	LONG FORM
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
polarity	UNIDIRECTIONAL
Maximum power dissipation	1 W
Certification status	Not Qualified
Nominal reference voltage	9.1 V
Maximum reverse current	10 µA
surface mount	NO
technology	ZENER
Terminal form	WIRE
Terminal location	AXIAL
Maximum time at peak reflow temperature	NOT SPECIFIED
Maximum voltage tolerance	5%
Working test current	10 mA
Base Number Matches	1

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