200 W, UNIDIRECTIONAL, SILICON, TVS DIODE
| Parameter Name | Attribute value |
| Is it Rohs certified? | incompatible |
| Maker | Toshiba Semiconductor |
| package instruction | O-PALF-W2 |
| Reach Compliance Code | unknown |
| Maximum breakdown voltage | 11 V |
| Minimum breakdown voltage | 9 V |
| Shell connection | ISOLATED |
| Configuration | SINGLE |
| Diode component materials | SILICON |
| Diode type | TRANS VOLTAGE SUPPRESSOR DIODE |
| Maximum dynamic impedance | 30 Ω |
| JESD-30 code | O-PALF-W2 |
| Maximum non-repetitive peak reverse power dissipation | 200 W |
| Number of components | 1 |
| Number of terminals | 2 |
| Maximum operating temperature | 150 °C |
| Minimum operating temperature | -40 °C |
| Package body material | PLASTIC/EPOXY |
| Package shape | ROUND |
| Package form | LONG FORM |
| Peak Reflow Temperature (Celsius) | NOT SPECIFIED |
| polarity | UNIDIRECTIONAL |
| Maximum power dissipation | 1 W |
| Certification status | Not Qualified |
| Nominal reference voltage | 10 V |
| Maximum repetitive peak reverse voltage | 6 V |
| Maximum reverse current | 10 µA |
| surface mount | NO |
| technology | ZENER |
| Terminal form | WIRE |
| Terminal location | AXIAL |
| Maximum time at peak reflow temperature | NOT SPECIFIED |
| Working test current | 10 mA |
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