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PBSS4021SN,115

Description
TRANS 2NPN 20V 7.5A 8SO
CategoryDiscrete semiconductor    The transistor   
File Size777KB,15 Pages
ManufacturerNexperia
Websitehttps://www.nexperia.com
Download Datasheet Parametric View All

PBSS4021SN,115 Overview

TRANS 2NPN 20V 7.5A 8SO

PBSS4021SN,115 Parametric

Parameter NameAttribute value
Brand NameNexperia
MakerNexperia
Parts packaging codeSOIC
package instructionSMALL OUTLINE, R-PDSO-G8
Contacts8
Manufacturer packaging codeSOT96-1
Reach Compliance Codecompliant
ECCN codeEAR99
Samacsys Description20 V, 7.5 A NPN/NPN low V_CEsat (BISS) transistor
Maximum collector current (IC)7.5 A
Collector-emitter maximum voltage20 V
ConfigurationSEPARATE, 2 ELEMENTS
Minimum DC current gain (hFE)100
JESD-30 codeR-PDSO-G8
JESD-609 codee4
Humidity sensitivity level1
Number of components2
Number of terminals8
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typeNPN
surface mountYES
Terminal surfaceNickel/Palladium/Gold (Ni/Pd/Au)
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperature30
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)115 MHz
PBSS4021SN
20 V, 7.5 A NPN/NPN low V
CEsat
(BISS) transistor
Rev. 2 — 11 October 2010
Product data sheet
1. Product profile
1.1 General description
NPN/NPN low V
CEsat
Breakthrough In Small Signal (BISS) transistor in a SOT96-1 (SO8)
medium power Surface-Mounted Device (SMD) plastic package.
Table 1.
Product overview
Package
Nexperia
PBSS4021SN
SOT96-1
Name
SO8
PNP/PNP
complement
PBSS4021SP
NPN/PNP
complement
PBSS4021SPN
Type number
1.2 Features and benefits
Very low collector-emitter saturation voltage V
CEsat
High collector current capability I
C
and I
CM
High collector current gain (h
FE
) at high I
C
High efficiency due to less heat generation
Smaller required Printed-Circuit Board (PCB) area than for conventional transistors
1.3 Applications
Loadswitch
Battery-driven devices
Power management
Charging circuits
Power switches (e.g. motors, fans)
1.4 Quick reference data
Table 2.
V
CEO
I
C
I
CM
R
CEsat
[1]
Quick reference data
Conditions
open base
single pulse;
t
p
1 ms
I
C
= 5 A; I
B
= 0.5 A
[1]
Symbol Parameter
collector-emitter voltage
collector current
peak collector current
collector-emitter
saturation resistance
Min
-
-
-
-
Typ
-
-
-
25
Max
20
7.5
15
35
Unit
V
A
A
Pulse test: t
p
300
μs; δ ≤
0.02.
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