NSP8814, NSP8818
ESD and Surge Protection
Device
Low Capacitance Surge Protection for
High Speed Data
The NSP8814 and NSP8818 surge protectors are designed
specifically to protect 10/100 and GbE Ethernet signals from high
levels of surge current. Low clamping voltage under high surge
conditions make this device an ideal solution for protecting voltage
sensitive lines leading to Ethernet transceiver chips. Low capacitance
combined with flow-through style packaging allows for easy PCB
layout and matched trace lengths necessary to maintain consistent
impedance between high-speed differential lines.
Features
www.onsemi.com
MARKING
DIAGRAMS
4C M
G
UDFN8 & WDFNW8
CASES 506CV & 515AE
•
Protection for the Following IEC Standards:
•
•
•
•
•
•
IEC 61000−4−2 (ESD)
±30
kV (Contact)
IEC 61000−4−5 (Lightning) 35 A (8/20
ms)
Flow−Thru Routing Scheme
Low Capacitance: 2 pF Max (I/O to I/O)
UL Flammability Rating of 94 V−0
SZNSP8814MTWTAG − Wettable Flank Device
SZ Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable*
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
4D M
G
UDFN10
CASE 506CU
XX = Specific Device Code
M = Date Code
G
= Pb−Free Package
ORDERING INFORMATION
Device
NSP8814MUTAG
Package
UDFN8
(Pb−Free)
Shipping
3000 / Tape &
Reel
3000 / Tape &
Reel
3000 / Tape &
Reel
Typical Applications
•
10/100 and GbE Ethernet
•
MagJacks® / Integrated Magnetics
•
Notebooks/Desktops/Servers
MAXIMUM RATINGS
(T
J
= 25°C unless otherwise noted)
Rating
Operating Junction Temperature Range
Storage Temperature Range
Lead Solder Temperature −
Maximum (10 Seconds)
IEC 61000−4−2 Contact (ESD)
IEC 61000−4−2 Air (ESD)
ISO 10605 330 pF / 330
W
Contact
ISO 10605 330 pF / 2 kW Contact
ISO 10605 150 pF / 2 kW Contact
Maximum Peak Pulse Current
8/20
ms
@ T
A
= 25°C
10/700
ms
@ T
A
= 25°C
Symbol
T
J
T
stg
T
L
ESD
Value
−55 to +125
−55 to +150
260
±30
±30
±30
±30
±30
35
20
Unit
°C
°C
°C
kV
SZNSP8814MTWTAG WDFNW8
(Pb−Free)
NSP8818MUTAG
UDFN10
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
I
PP
A
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
See Application Note AND8308/D for further description of survivability specs.
©
Semiconductor Components Industries, LLC, 2017
1
August, 2018 − Rev. 4
Publication Order Number:
NSP8814/D
NSP8814, NSP8818
NSP8814
GND
GND
I/O
I/O
GND
GND
GND
Pins 1, 4, 5, 8
Note: Common GND – Only minimum of 1 GND connection required
GND
I/O
I/O
Pin2 Pin3 Pin6 Pin7
NSP8818
GND
I/O
I/O
GND
I/O
I/O
GND
GND
GND
I/O
I/O
Pins 3, 8
Note: Common GND – Only minimum of 1 GND connection required
Pin1 Pin2 Pin4 Pin5 Pin6 Pin7 Pin9 Pin10
=
I/O
I/O
Figure 1. Pin Schematic
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
Symbol
V
RWM
I
R
V
BR
I
T
V
HOLD
I
HOLD
R
DYN
I
PP
V
C
Parameter
Working Peak Voltage
Maximum Reverse Leakage Current @ V
RWM
Breakdown Voltage @ I
T
Test Current
Holding Reverse Voltage
Holding Reverse Current
Dynamic Resistance
Maximum Peak Pulse Current
Clamping Voltage @ I
PP
V
C
= V
HOLD
+ (I
PP
* R
DYN
)
I
PP
Uni−Directional Surge Protection
R
DYN
V
CL
V
BR
V
RWM
I
R
I
T
V
CL
V
I
PP
R
DYN
I
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise specified)
Parameter
Reverse Working Voltage
Forward Voltage
Breakdown Voltage
Reverse Leakage Current
Clamping Voltage (Note 2)
Symbol
V
RWM
V
F
V
BR
I
R
V
C
Conditions
Any I/O to GND (Note 1)
I
F
= 10 mA, GND to All IO Pins
I
T
= 1 mA, I/O to GND
V
RWM
= 3.0 V, I/O to GND
I
PP
= 1 A
I
PP
= 10 A
I
PP
= 25 A
I
PP
= 35 A
Clamping Voltage
Junction Capacitance
V
C
C
J
IEC61000−4−2,
±8
kV Contact
V
R
= 0 V, f = 1 MHz between I/O Pins
V
R
= 0 V, f = 1 MHz between I/O Pins and GND
1.5
0.5
3.2
0.85
3.5
Min
Typ
Max
3.0
1.1
5.0
0.5
5.0
6.0
10
15
See Figures 7 and 14
2.0
5.0
pF
Unit
V
V
V
mA
V
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. Surge protection devices are normally selected according to the working peak reverse voltage (V
RWM
), which should be equal or greater
than the DC or continuous peak operating voltage level.
2. Any I/O to GND (8/20
ms
pulse).
www.onsemi.com
2
NSP8814, NSP8818
t
r
= rise time to peak value [8
ms]
t
f
= decay time to half value [20
ms]
20
18
16
14
V
pk
(V)
12
10
8
6
4
2
0
0 t
r
t
f
TIME (ms)
0
0
5
10
15
20
I
pk
(A)
25
30
35
IO−GND
IO−IO
Ipp - PEAK PULSE CURRENT - %Ipp
100
Peak
Value
50
Half Value
Figure 2. IEC61000−4−5 8/20
ms
Pulse
Waveform
Figure 3. Clamping Voltage vs. Peak Pulse Current
(t
p
= 8/20
ms
per Figure 2)
20
Ipp - PEAK PULSE CURRENT - %Ipp
100
Peak
Value
t
r
= rise time to peak value [10
ms]
t
f
= decay time to half value [700
ms]
18
16
14
V
pk
(V)
12
10
8
6
4
2
IO−GND
IO−IO
50
Half Value
0
0 t
r
t
f
TIME (ms)
0
0
2
4
6
8
10 12
I
pk
(A)
14
16
18
20
Figure 4. IEC61000−4−5 10/700
ms
Pulse
Waveform
90
80
70
60
VOLTAGE (V)
VOLTAGE (V)
0
20
40
60
80
TIME (ns)
100
120
140
50
40
30
20
10
0
−10
−20
Figure 5. Clamping Voltage vs. Peak Pulse Current
(t
p
= 10/700
ms
per Figure 4)
10
0
−10
−20
−30
−40
−50
−60
−70
−80
−90
−20
0
20
40
60
80
TIME (ns)
100
120
140
Figure 6. IEC61000−2−4 +8 kV Contact
Clamping Voltage
Figure 7. IEC61000−2−4 −8 kV Contact
Clamping Voltage
www.onsemi.com
3
NSP8814, NSP8818
IEC 61000−4−2 Spec.
Test Volt-
age (kV)
2
4
6
8
First Peak
Current
(A)
7.5
15
22.5
30
Current at
30 ns (A)
4
8
12
16
Current at
60 ns (A)
2
4
6
8
I @ 60 ns
10%
t
P
= 0.7 ns to 1 ns
I @ 30 ns
IEC61000−4−2 Waveform
I
peak
100%
90%
Level
1
2
3
4
Figure 8. IEC61000−4−2 Spec
Device
ESD Gun
Under
Test
Oscilloscope
50
W
Cable
50
W
Figure 9. Diagram of ESD Clamping Voltage Test Setup
The following is taken from Application Note
AND8308/D − Interpretation of Datasheet Parameters
for ESD Devices.
ESD Voltage Clamping
For sensitive circuit elements it is important to limit the
voltage that an IC will be exposed to during an ESD event
to as low a voltage as possible. The ESD clamping voltage
is the voltage drop across the ESD protection diode during
an ESD event per the IEC61000−4−2 waveform. Since the
IEC61000−4−2 was written as a pass/fail spec for larger
systems such as cell phones or laptop computers it is not
clearly defined in the spec how to specify a clamping voltage
at the device level. ON Semiconductor has developed a way
to examine the entire voltage waveform across the ESD
protection diode over the time domain of an ESD pulse in the
form of an oscilloscope screenshot, which can be found on
the datasheets for all ESD protection diodes. For more
information on how ON Semiconductor creates these
screenshots and how to interpret them please refer to
AND8307/D.
www.onsemi.com
4
NSP8814, NSP8818
20
18
16
TLP CURRENT (A)
14
12
10
8
6
4
2
0
0
1
2
3
4
5
6
7
0
8
2
4
6
8
10
−20
−18
EQUIVALENT V
IEC
(kV)
TLP CURRENT (A)
EQUIVALENT V
IEC
(kV)
−16
−14
6
8
10
−12
−10
−8
−6
−4
−2
0
0
1
2
3
4
5
6
7
4
2
0
8
VOLTAGE (V)
VOLTAGE (V)
Figure 10. Positive TLP IV Curve
NOTE:
Figure 11. Negative TLP IV Curve
TLP parameter: Z
0
= 50
W,
t
p
= 100 ns, t
r
= 300 ps, averaging window: t
1
= 30 ns to t
2
= 60 ns.
Transmission Line Pulse (TLP) Measurement
Transmission Line Pulse (TLP) provides current versus
voltage (I−V) curves in which each data point is obtained
from a 100 ns long rectangular pulse from a charged
transmission line. A simplified schematic of a typical TLP
system is shown in Figure 12. TLP I−V curves of ESD
protection devices accurately demonstrate the product’s
ESD capability because the 10s of amps current levels and
under 100 ns time scale match those of an ESD event. This
is illustrated in Figure 13 where an 8 kV IEC 61000−4−2
current waveform is compared with TLP current pulses at
8 A and 16 A. A TLP I−V curve shows the voltage at which
the device turns on as well as how well the device clamps
voltage over a range of current levels.
L
50
W
Coax
Cable
S
Attenuator
÷
10 MW
I
M
50
W
Coax
Cable
V
M
V
C
Oscilloscope
DUT
Figure 12. Simplified Schematic of a Typical TLP
System
Figure 13. Comparison Between 8 kV IEC 61000−4−2 and 8 A and 16 A TLP Waveforms
www.onsemi.com
5
京公网安备 11010802033920号
EEWORLD
