EEWORLDEEWORLDEEWORLD

Part Number

Search

EPC2014

Description
TRANS GAN 40V 10A BUMPED DIE
Categorysemiconductor    Discrete semiconductor   
File Size1MB,6 Pages
ManufacturerEPC
Environmental Compliance
Download Datasheet Parametric Compare View All

EPC2014 Overview

TRANS GAN 40V 10A BUMPED DIE

EPC2014 Parametric

Parameter NameAttribute value
FET typeN channel
technologyGaNFET (gallium nitride)
Drain-source voltage (Vdss)40V
Current - Continuous Drain (Id) at 25°C10A(Ta)
Drive voltage (maximum Rds On, minimum Rds On)5V
Rds On (maximum value) when different Id, Vgs16 milliohms @ 5A, 5V
Vgs (th) (maximum value) when different Id2.5V @ 2mA
Gate charge (Qg) at different Vgs (maximum value)2.8nC @ 5V
Vgs (maximum value)+6V,-5V
Input capacitance (Ciss) at different Vds (maximum value)325pF @ 20V
FET function-
Power dissipation (maximum)-
Operating temperature-40°C ~ 150°C(TJ)
Installation typesurface mount
Supplier device packagingMold profile (5 electrodes)
Package/casingMold
eGaN® FET DATASHEET
EPC2014
EPC2014 – Enhancement Mode Power Transistor
V
DSS
, 40 V
R
DS(ON)
, 16 mW
I
D
, 10 A
NEW PRODUCT
EFFICIENT POWER CONVERSION
HAL
Gallium Nitride is grown on Silicon Wafers and processed using standard CMOS equipment lever-
aging the infrastructure that has been developed over the last 55 years. GaN’s exceptionally high
electron mobility and low temperature coefficient allows very low R
DS(ON)
, while its lateral device
structure and majority carrier diode provide exceptionally low Q
G
and zero Q
RR
. The end result is a
device that can handle tasks where very high switching frequency, and low on-time are beneficial
as well as those where on-state losses dominate.
Maximum Ratings
V
DS
I
D
V
GS
T
J
T
STG
Drain-to-Source Voltage (Continuous)
Drain-to-Source Voltage (up to 10,000 5ms pulses at 125° C)
Continuous (T
A
= 25˚C,
θ
JA
= 40)
Pulsed (25˚C, Tpulse = 300 µs)
Gate-to-Source Voltage
Gate-to-Source Voltage
Operating Temperature
Storage Temperature
PARAMETER
Static Characteristics
(T
J
= 25˚C unless otherwise stated)
BV
DSS
I
DSS
I
GSS
V
GS(TH)
R
DS(ON)
Drain-to-Source Voltage
Drain Source Leakage
Gate-Source Forward Leakage
Gate-Source Reverse Leakage
Gate Threshold Voltage
Drain-Source On Resistance
V
GS
= 0 V, I
D
= 125 µA
V
DS
= 32 V, V
GS
= 0 V
V
GS
= 5 V
V
GS
= -5 V
V
DS
= V
GS
, I
D
= 2 mA
V
GS
= 5 V, I
D
= 5 A
0.7
40
50
0.4
0.1
1.4
12
100
2
0.5
2.5
16
V
µA
mA
V
40
48
10
40
6
-5
-40 to 150
-40 to 150
TEST CONDITIONS
V
V
A
V
˚C
EPC2014 eGaN® FETs are supplied only in
passivated die form with solder bumps
Applications
• High Speed DC-DC conversion
• Class D Audio
• Hard Switched and High Frequency Circuits
Benefits
• Ultra High Efficiency
• Ultra Low R
DS(on)
• Ultra low Q
G
• Ultra small footprint
MIN
TYP
MAX
UNIT
Source-Drain Characteristics
(T
J
= 25˚C unless otherwise stated)
V
SD
Source-Drain Forward Voltage
I
S
= 0.5 A, V
GS
= 0 V, T = 25˚C
I
S
= 0.5 A, V
GS
= 0 V, T = 125˚C
1.3
1.4
V
All measurements were done with substrate shorted to source.
Thermal Characteristics
TYP
R
θ
JC
R
θ
JB
R
θ
JA
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Board
Thermal Resistance, Junction to Ambient (Note 1)
6.9
32
80
˚C/W
˚C/W
˚C/W
Note 1: R
θ
JA
is determined with the device mounted on one square inch of copper pad, single layer 2 oz copper on FR4 board.
See http://epc-co.com/epc/documents/product-training/Appnote_Thermal_Performance_of_eGaN_FETs.pdf for details.
EPC – EFFICIENT POWER CONVERSION CORPORATION |
WWW.EPC-CO.COM
| COPYRIGHT 2013 |
| PAGE 1

EPC2014 Related Products

EPC2014 EPC9111 EPC9506 EPC9005 EPC9101
Description TRANS GAN 40V 10A BUMPED DIE EVAL BOARD CLASS D WIRELESS DEMO EVAL BOARD GAN ZVS CLASS D AMP BOARD DEV FOR EPC2014 40V EGAN EVAL DEV EPC2015/2014 EGAN FETS
type - Power management Power management Power management -
Function - Wireless power/charging Wireless power/charging Half H-bridge driver (external FET) -
Embedded - no no no -
IC/parts used - EPC2014 EPC2014 EPC2014 EPC2014,EPC2015
What's included - plate plate plate plate
Auxiliary properties - 6.78MHz 6.78MHz GaNFET driver circuit uses 7V ~ 12V voltage -
MSP430 MCU simulation example based on Proteus 9-four-digit digital tube static display
[b][color=#5E7384]This content is originally created by EEWORLD forum user [size=3]tiankai001[/size]. If you need to reprint or use it for commercial purposes, you must obtain the author's consent and...
tiankai001 Microcontroller MCU
st F7 + Elderly people calling for help + Watch AVI format mpeg encoded video
[i=s]This post was last edited by 247153481 on 2015-10-9 11:29[/i] The example program comes with a video player, but it can only play uncommon formats. As a siege lion, how could I bear to keep using...
247153481 stm32/stm8
The promotion for 6 popular development tools related to Texas Instruments MSP430 is about to end!
[size=4][color=darkred]TI eStore is having a discount! Apply for MSP430 samples at ti.com.cn now and you will get an eStore discount code. Six popular MSP430 development tools are up to 20% off![/colo...
qwqwqw2088 Microcontroller MCU
Knowledge about op amps
[i=s] This post was last edited by paulhyde on 2014-9-15 09:28 [/i] Some used op amp chip information and op amp usage tips~~~...
selia1987 Electronics Design Contest
ACD0809 multi-channel input selection problem
0809 has 8 inputs. I have now connected two of them (the B and C bits of the routing address are grounded. Therefore, 0 and 1 of the A bit can directly select in0 and in1, and C, B, and A are equivale...
zouweihua Embedded System
USB hid software simulates plugging and unplugging
USB HID communication requires analog plugging and unplugging. How many MS are required to set the D+ signal line to 0 level? Is there any specific time requirement?...
284423641 MCU

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Robot
development
community

Index Files: 1411  1628  1335  2326  1291  29  33  27  47  26 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号