This product complies with the RoHS Directive (EU 2002/95/EC).
Transistors with built-in Resistor
UNR921xG Series
Silicon NPN epitaxial planar type
For digital circuits
■
Features
■
Package
■
Resistance by Part Number
•
UNR9210G
•
UNR9211G
•
UNR9212G
•
UNR9213G
•
UNR9214G
•
UNR9215G
•
UNR9216G
•
UNR9217G
•
UNR9218G
•
UNR9219G
•
UNR921AG
•
UNR921BG
•
UNR921CG
•
UNR921DG
•
UNR921EG
•
UNR921FG
•
UNR921KG
•
UNR921LG
•
UNR921MG
•
UNR921NG
•
UNR921TG
•
UNR921VG
■
Absolute Maximum Ratings
T
a
=
25°C
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Collector current
Total power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
I
C
P
T
T
j
T
stg
Ma
int
en
Marking Symbol (R
1
)
8L
47 kΩ
8A
10 kΩ
8B
22 kΩ
8C
47 kΩ
8D
10 kΩ
8E
10 kΩ
8F
4.7 kΩ
8H
22 kΩ
8I
0.51 kΩ
8K
1 kΩ
8X
100 kΩ
8Y
100 kΩ
8Z
8M
47 kΩ
8N
47 kΩ
8O
4.7 kΩ
8P
10 kΩ
8Q
4.7 kΩ
EL
2.2 kΩ
EX
4.7 kΩ
EZ
22 kΩ
FD
2.2 kΩ
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(R
2
)
10 kΩ
22 kΩ
47 kΩ
47 kΩ
5.1 kΩ
10 kΩ
100 kΩ
47 kΩ
10 kΩ
22 kΩ
10 kΩ
4.7 kΩ
4.7 kΩ
47 kΩ
47 kΩ
47 kΩ
2.2 kΩ
M
ain
Di
sc te
on na
tin nc
ue e/
d
•
Costs can be reduced through downsizing of the equipment and
reduction of the number of parts.
•
SS-Mini type package, allowing automatic insertion through tape
packing.
•
Code
SSMini3-F3
•
Pin Name
1: Base
2: Emitter
3: Collector
R
1
B
R
2
■
Internal Connection
C
E
an
ce
/D
isc
on
tin
ue
Rating
50
50
100
125
125
Unit
V
V
mA
mW
°C
°C
−55
to
+125
Publication date: July 2008
SJH00241BED
1
This product complies with the RoHS Directive (EU 2002/95/EC).
UNR921xG Series
■
Electrical Characteristics
T
a
=
25°C
±
3°C
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Collector-base cut-off current (Emitter open)
Collector-emitter cut-off current (Base open)
Emitter-
base
cut-off
UNR9210G/9215G/
9216G/9217G/921BG
Symbol
V
CBO
V
CEO
I
CBO
I
CEO
I
EBO
Transistors with built-in Resistor
Conditions
I
C
=
10
µA,
I
E
=
0
I
C
=
2 mA, I
B
=
0
V
CB
=
50 V, I
E
=
0
V
CE
=
50 V, I
B
=
0
V
EB
=
6 V, I
C
=
0
Min
50
50
Typ
Max
Unit
V
V
µA
µA
mA
0.1
0.5
0.01
0.1
0.2
0.5
UNR921FG/921KG
UNR9219G
UNR9218G/921CG/921LG/921VG
UNR921VG
Forward
current
h
FE
UNR9218G/921KG/921LG
UNR9219G/921DG/921FG
transfer
ratio
UNR9211G
UNR9212G/921EG
UNR9213G/9214G/
921AG/921CG/921MG
UNR921NG/921TG
UNR9210G/9215G/
9216G/9217G/921BG
Collector-emitter saturation voltage
UNR921VG
V
CE(sat)
V
OH
V
OL
ue
Output voltage high-level
Output voltage low-level
UNR9213G/921BG/921KG
UNR921DG
UNR921EG
an
UNR921AG
Transition frequency
Input
f
T
R
1
UNR9218G
resistance UNR9219G
UNR921MG/921VG
UNR9216G/921FG/921LG/921NG
UNR9211G/9214G/9215G/921KG
UNR9212G/9217G/921TG
UNR9210G/9213G/921DG/921EG
UNR921AG/921BG
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2
d
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co L a d t ty
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ct
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1.0
1.5
2.0
20
V
CE
=
10 V, I
C
=
5 mA
6
20
30
35
60
80
80
400
160
460
I
C
=
10 mA, I
B
=
0.3 mA
0.25
V
I
C
=
10 mA, I
B
=
1.5 mA
V
CC
=
5 V, V
B
=
0.5 V, R
L
=
1 kΩ
V
CC
=
5 V, V
B
=
2.5 V, R
L
=
1 kΩ
V
CC
=
5 V, V
B
=
3.5 V, R
L
=
1 kΩ
V
CC
=
5 V, V
B
=
10 V, R
L
=
1 kΩ
4.9
V
V
0.2
V
CC
=
5 V, V
B
=
6 V, R
L
=
1 kΩ
V
CC
=
5 V, V
B
=
5 V, R
L
=
1 kΩ
V
CB
=
10 V, I
E
= −2
mA, f
=
200 MHz
150
MHz
kΩ
−30%
0.51
1
+30%
2.2
4.7
10
22
47
100
SJH00241BED
Ma
int
en
ce
M
ain
Di
sc te
on na
tin nc
ue e/
d
UNR9213G/921AG
current
UNR9212G/9214G/921DG/
(Collector 921EG/921MG/921NG/921TG
open)
UNR9211G
/D
isc
on
tin
This product complies with the RoHS Directive (EU 2002/95/EC).
Transistors with built-in Resistor
■
Electrical Characteristics (continued)
T
a
=
25°C
±
3°C
Parameter
Emitter-base resistance UNR921CG
Rasistance UNR921MG
ratio
UNR921NG
UNR9218G/9219G
UNR9214G
UNR921TG
UNR921FG
Symbol
R
2
R
1
/R
2
Conditions
UNR921xG Series
Min
−30%
Typ
47
0.047
0.1
Max
+30%
Unit
kΩ
0.08
0.17
0.10
0.21
0.47
0.47
1.0
1.0
2.13
2.14
4.7
0.12
0.25
M
ain
Di
sc te
on na
tin nc
ue e/
d
0.37
UNR921AG/921VG
UNR9211G/9212G/9213G/921LG
UNR921KG
UNR921EG
0.8
1.70
1.70
3.7
UNR921DG
0.57
1.2
2.60
2.60
5.7
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
Common characteristics chart
P
T
T
a
150
Total power dissipation P
T
(mW)
125
100
75
50
25
0
Collector-emitter saturation voltage V
CE(sat)
(V)
60
Ma
int
en
an
I
C
V
CE
I
B
=
1.0 mA
0.9 mA
0.8 mA
ce
Characteristics charts of UNR9210G
/D
isc
Ambient temperature T
a
(
°C
)
on
0
40
80
120
160
T
a
=
25°C
Forward current transfer ratio h
FE
50
Collector current I
C
(mA)
40
0.4 mA
0.5 mA
0.6 mA
0.7 mA
0.1 mA
30
0.3 mA
20
10
0
0
2
4
6
8
10
12
Collector-emitter voltage V
CE
(V)
d
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ct
e
life
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cy
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.
V
CE(sat)
I
C
h
FE
I
C
10
2
I
C
/ I
B
=
10
tin
ue
400
V
CE
=
10 V
10
300
T
a
=
75°C
25°C
1
T
a
=
75°C
25°C
10
−1
−25°C
10
−2
10
−1
200
−25°C
100
0
1
10
10
2
1
10
10
2
10
3
Collector current I
C
(mA)
Collector current I
C
(mA)
SJH00241BED
3
This product complies with the RoHS Directive (EU 2002/95/EC).
UNR921xG Series
C
ob
V
CB
Collector output capacitance
(Common base, input open circuited) C
ob
(pF)
6
f
=
1 MHz
I
E
=
0
T
a
=
25°C
10
4
Transistors with built-in Resistor
I
O
V
IN
V
O
=
5 V
T
a
=
25°C
V
IN
I
O
10
2
V
O
=
0.2 V
T
a
=
25°C
5
Output current I
O
(
µA
)
4
3
10
2
Input voltage V
IN
(V)
10
3
10
1
0
10
−1
1
10
10
2
Collector-base voltage V
CB
(V)
Characteristics charts of UNR9211G
I
C
V
CE
160
Collector current I
C
(mA)
120
0.7 mA
0.6 mA
0.5 mA
10
Forward current transfer ratio h
FE
I
B
=
1.0 mA
0.9 mA
0.8 mA
T
a
=
25°C
0.4 mA
0.3 mA
80
0.2 mA
40
10
−1
0.1 mA
tin
0
0
2
4
6
8
10
12
10
−2
10
−1
Collector-emitter voltage V
CE
(V)
an
ce
C
ob
V
CB
Collector output capacitance
(Common base, input open circuited) C
ob
(pF)
6
5
Ma
int
en
f
=
1 MHz
I
E
=
0
T
a
=
25°C
Output current I
O
(
µA
)
4
3
10
2
Input voltage V
IN
(V)
2
1
0
10
−1
1
10
10
2
Collector-base voltage V
CB
(V)
4
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1
0.4
0.6
0.8
1.0
1.2
1.4
M
ain
Di
sc te
on na
tin nc
ue e/
d
2
10
10
−1
1
10
−2
10
−1
1
10
10
2
Input voltage V
IN
(V)
Output current I
O
(mA)
V
CE(sat)
I
C
h
FE
I
C
Collector-emitter saturation voltage V
CE(sat)
(V)
10
2
I
C
/ I
B
=
10
400
V
CE
=
10 V
300
T
a
=
75°C
1
200
25°C
T
a
=
75°C
25°C
100
−25°C
−25˚C
ue
1
10
10
2
0
1
10
10
2
10
3
on
Collector current I
C
(mA)
Collector current I
C
(mA)
/D
isc
I
O
V
IN
V
IN
I
O
10
4
V
O
=
5 V
T
a
=
25°C
10
2
V
O
=
0.2 V
T
a
=
25°C
10
3
10
1
10
10
−1
1
0.4
0.6
0.8
1.0
1.2
1.4
10
−2
10
−1
1
10
10
2
Input voltage V
IN
(V)
Output current I
O
(mA)
SJH00241BED
This product complies with the RoHS Directive (EU 2002/95/EC).
Transistors with built-in Resistor
Characteristics charts of UNR9212G
I
C
V
CE
Collector-emitter saturation voltage V
CE(sat)
(V)
160
T
a
=
25°C
I
B
=
1.0 mA
0.9 mA
0.8 mA
120
UNR921xG Series
V
CE(sat)
I
C
10
2
h
FE
I
C
400
V
CE
=
10 V
I
C
/ I
B
=
10
Collector current I
C
(mA)
0.7 mA
0.6 mA
0.5 mA
0.4 mA
10
Forward current transfer ratio h
FE
300
T
a
=
75°C
M
ain
Di
sc te
on na
tin nc
ue e/
d
80
1
200
0.3 mA
25°C
−25°C
25°C
T
a
=
75°C
40
0.2 mA
10
−1
100
−25°C
0.1 mA
0
0
2
4
6
8
10
12
10
−2
10
−1
Collector-emitter voltage V
CE
(V)
C
ob
V
CB
Collector output capacitance
(Common base, input open circuited) C
ob
(pF)
6
5
f
=
1 MHz
I
E
=
0
T
a
=
25°C
4
3
2
1
1
10
10
2
ue
0
10
−1
Ma
int
en
an
I
C
V
CE
160
I
B
=
1.0 mA
ce
Characteristics charts of UNR9213G
/D
isc
on
Collector-base voltage V
CB
(V)
Collector-emitter saturation voltage V
CE(sat)
(V)
T
a
=
25°C
Forward current transfer ratio h
FE
Collector current I
C
(mA)
120
0.9 mA
0.8 mA
0.7 mA
0.6 mA
0.5 mA
0.4 mA
80
0.3 mA
40
0.2 mA
10
0.1 mA
0
0
2
4
6
8
10
12
10
−2
10
−1
Collector-emitter voltage V
CE
(V)
d
pla inc
Pl
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pla m d m es
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htt visit
d d te te ow
p:/ fo
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.se ng ntin tin ty e ty ur
mi UR ue ued pe pe Pro
co L a d t ty
du
n.p bo yp pe
ct
e
life
an ut
d
as lat
cy
on es
cle
ic. t in
sta
co fo
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.jp rm
.
/en at
/ ion
.
1
10
10
2
0
1
10
10
2
10
3
Collector current I
C
(mA)
Collector current I
C
(mA)
I
O
V
IN
V
IN
I
O
10
4
V
O
=
5 V
T
a
=
25°C
10
2
V
O
=
0.2 V
T
a
=
25°C
Output current I
O
(
µA
)
10
2
Input voltage V
IN
(V)
10
3
10
1
10
10
−1
1
0.4
0.6
0.8
1.0
1.2
1.4
10
−2
10
−1
1
10
10
2
tin
Input voltage V
IN
(V)
Output current I
O
(mA)
V
CE(sat)
I
C
h
FE
I
C
10
2
I
C
/ I
B
=
10
400
V
CE
=
10 V
10
300
T
a
=
75°C
25°C
1
200
−25°C
25°C
−1
T
a
=
75°C
100
−25°C
1
10
10
2
0
1
10
10
2
10
3
Collector current I
C
(mA)
Collector current I
C
(mA)
SJH00241BED
5
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