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PC28F512P33EF0

Description
IC FLASH 512M PARALLEL 64EASYBGA
Categorystorage   
File Size1MB,92 Pages
ManufacturerMicron Technology
Websitehttp://www.mdtic.com.tw/
Environmental Compliance
Download Datasheet Parametric View All

PC28F512P33EF0 Overview

IC FLASH 512M PARALLEL 64EASYBGA

PC28F512P33EF0 Parametric

Parameter NameAttribute value
memory typenon-volatile
memory formatflash memory
technologyFLASH - NOR
storage512Mb (32M x 16)
Clock frequency52MHz
Write cycle time - words, pages95ns
interview time95ns
memory interfacein parallel
Voltage - Power2.3 V ~ 3.6 V
Operating temperature-40°C ~ 85°C(TA)
Installation typesurface mount
Package/casing64-TBGA
Supplier device packaging64-EasyBGA(8x10)
512Mb, 1Gb, 2Gb: P33-65nm
Features
Micron Parallel NOR Flash Embedded
Memory (P33-65nm)
JS28F512P33BFD, JS28F512P33TFA, JS28F512P33EFA
PC28F512P33BFD, PC28F512P33TFA, PC28F512P33EFA
JS28F00AP33BFA, JS28F00AP33TFA, JS28F00AP33EFA
PC28F00AP33BFA, PC28F00AP33TFA, PC28F00AP33EFA,
PC28F00BP33EFA
Features
• High performance
• Easy BGA package features
– 95ns initial access for 512Mb, 1Gb Easy BGA
– 100ns initial access for 2Gb Easy BGA
– 25ns 16-word asychronous page read mode
– 52 MHz (Easy BGA) with zero WAIT states and
17ns clock-to-data output synchronous burst
read mode
– 4-, 8-, 16-, and continuous word options for burst
mode
• TSOP package features
– 105ns initial access for 512Mb, 1Gb TSOP
• Both Easy BGA and TSOP package features
– Buffered enhanced factory programming (BEFP)
at 2 MB/s (TYP) using a 512-word buffer
– 3.0V buffered programming at 1.46 MB/s (TYP)
using a 512-word buffer
• Architecture
– MLC: highest density at lowest cost
– Symmetrically blocked architecture (512Mb, 1Gb,
2Gb)
– Asymmetrically blocked architecture (512Mb,
1Gb); four 32KB parameter blocks: top or bottom
configuration
– 128KB main blocks
– Blank check to verify an erased block
• Voltage and power
– V
CC
(core) voltage: 2.3–3.6V
– V
CCQ
(I/O) voltage: 2.3–3.6V
– Standy current: 70µA (TYP) for 512Mb; 75µA
(TYP) for 1Gb
– 52 MHz continuous synchronous read current:
21mA (TYP), 24mA (MAX)
• Security
– One-time programmable register: 64 OTP bits,
programmed with unique information from Mi-
cron; 2112 OTP bits available for customer pro-
gramming
– Absolute write protection: V
PP
= V
SS
– Power-transition erase/program lockout
– Individual zero-latency block locking
– Individual block lock-down
– Password access
• Software
25μs
(TYP) program suspend
25μs
(TYP) erase suspend
– Flash Data Integrator optimized
– Basic command set and extended function Inter-
face (EFI) command set compatible
– Common flash interface
• Density and Packaging
– 56-lead TSOP package (512Mb, 1Gb)
– 64-ball Easy BGA package (512Mb, 1Gb, 2Gb)
– 16-bit wide data bus
• Quality and reliabilty
– JESD47 compliant
– Operating temperature: –40°C to +85°C
– Minimum 100,000 ERASE cycles per block
– 65nm process technology
PDF: 09005aef845667b8
p33_65nm_MLC_512Mb-1gb_2gb.pdf - Rev. C 12/13 EN
1
Products and specifications discussed herein are subject to change by Micron without notice.
Micron Technology, Inc. reserves the right to change products or specifications without notice.
©
2013 Micron Technology, Inc. All rights reserved.
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