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TPCP8003-H(TE85L,F

Description
MOSFET N-CH 100V 2.2A PS-8
Categorysemiconductor    Discrete semiconductor   
File Size2MB,63 Pages
ManufacturerToshiba Semiconductor
Websitehttp://toshiba-semicon-storage.com/
Environmental Compliance
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TPCP8003-H(TE85L,F Overview

MOSFET N-CH 100V 2.2A PS-8

TPCP8003-H(TE85L,F Parametric

Parameter NameAttribute value
FET typeN channel
technologyMOSFET (metal oxide)
Drain-source voltage (Vdss)100V
Current - Continuous Drain (Id) at 25°C2.2A(Ta)
Drive voltage (maximum Rds On, minimum Rds On)4.5V,10V
Rds On (maximum value) when different Id, Vgs180 milliohms @ 1.1A, 10V
Vgs (th) (maximum value) when different Id2.3V @ 1mA
Gate charge (Qg) at different Vgs (maximum value)7.5nC @ 10V
Vgs (maximum value)±20V
Input capacitance (Ciss) at different Vds (maximum value)360pF @ 10V
FET function-
Power dissipation (maximum)840mW(Ta)
Operating temperature150°C(TJ)
Installation typesurface mount
Supplier device packagingPS-8 (2.9x2.4)
Package/casing8-SMD, flat leads
2009-9
PRODUCT GUIDE
MOSFETs
SEMICONDUCTOR
http://www.semicon.toshiba.co.jp/eng
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